HK1164383A1 - 用於適用於半導體製造的硅的坩堝 - Google Patents

用於適用於半導體製造的硅的坩堝

Info

Publication number
HK1164383A1
HK1164383A1 HK12105054.8A HK12105054A HK1164383A1 HK 1164383 A1 HK1164383 A1 HK 1164383A1 HK 12105054 A HK12105054 A HK 12105054A HK 1164383 A1 HK1164383 A1 HK 1164383A1
Authority
HK
Hong Kong
Prior art keywords
pot
producing semiconductors
silicon suitable
silicon
semiconductors
Prior art date
Application number
HK12105054.8A
Other languages
English (en)
Inventor
Rolf Wagner
Florian Arzberger
Original Assignee
Starck H C Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Starck H C Gmbh filed Critical Starck H C Gmbh
Publication of HK1164383A1 publication Critical patent/HK1164383A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
HK12105054.8A 2009-04-01 2012-05-23 用於適用於半導體製造的硅的坩堝 HK1164383A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009015236.9A DE102009015236B4 (de) 2009-04-01 2009-04-01 Tiegel und seine Verwendung
PCT/EP2010/051695 WO2010112259A1 (de) 2009-04-01 2010-02-11 Tiegel zur halbleiterherstellung geeigneten silizium

Publications (1)

Publication Number Publication Date
HK1164383A1 true HK1164383A1 (zh) 2012-09-21

Family

ID=42102073

Family Applications (1)

Application Number Title Priority Date Filing Date
HK12105054.8A HK1164383A1 (zh) 2009-04-01 2012-05-23 用於適用於半導體製造的硅的坩堝

Country Status (7)

Country Link
US (1) US20120037065A1 (zh)
EP (1) EP2414566A1 (zh)
JP (1) JP2012522710A (zh)
CN (1) CN102388169B (zh)
DE (1) DE102009015236B4 (zh)
HK (1) HK1164383A1 (zh)
WO (1) WO2010112259A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2543751A3 (en) * 2009-07-16 2013-06-26 MEMC Singapore Pte. Ltd. Coated crucibles and methods for preparing and use thereof
CN102115909A (zh) * 2010-10-13 2011-07-06 浙江舒奇蒙能源科技有限公司 一种三瓣石墨坩埚单晶炉
DE102011007708A1 (de) * 2011-04-19 2012-10-25 Sgl Carbon Se Tiegelanordnung
DE102012201116B4 (de) * 2012-01-26 2018-05-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Aufreinigung eines Tiegels
DE102012202589A1 (de) * 2012-02-21 2013-08-22 Evonik Degussa Gmbh Einsatz für einen Schmelztiegel
WO2013160236A1 (en) * 2012-04-24 2013-10-31 Saint-Gobain Ceramic Materials A. S. Silicon nitride containing crucible and a method of producing the silicon nitride containing crucible
DE102014102980B4 (de) * 2014-03-06 2017-12-21 Ald Vacuum Technologies Gmbh Hybridtiegel zur Kristallisation von Materialien, Verwendung des Hybridtiegels, Verfahren zur Herstellung von kristallinem Material sowie kristallines Produkt
DE102014214268A1 (de) 2014-07-22 2016-01-28 Rauschert Heinersdorf-Pressig Gmbh NITRIDGEBUNDENES SILIZIUMNITRID ALS WERKSTOFF FÜR BAUTEILE DER ALUMINIUM-GIEßEREI
CN108149315B (zh) * 2018-01-24 2020-10-23 中国科学院上海硅酸盐研究所 晶体生长用坩埚以及释放碳化硅晶体热应力的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060005763A1 (en) * 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
JP4545505B2 (ja) * 2004-07-22 2010-09-15 株式会社トクヤマ シリコンの製造方法
JP4993874B2 (ja) * 2005-05-06 2012-08-08 京セラ株式会社 シリコンインゴット用の鋳型
FR2892426B1 (fr) * 2005-10-26 2008-01-11 Apollon Solar Soc Par Actions Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication
JP4838591B2 (ja) * 2006-01-18 2011-12-14 新日鉄マテリアルズ株式会社 シリコン凝固用鋳型及びその製造方法
US8747554B2 (en) * 2006-06-20 2014-06-10 Momentive Performance Materials Inc. Multi-piece ceramic crucible and method for making thereof
KR20090023498A (ko) 2006-06-23 2009-03-04 알이씨 스캔웨이퍼 에이에스 반도체 등급 다결정 실리콘 잉곳의 직접 응결을 위한 도가니 및 방법
US20090249999A1 (en) * 2006-06-23 2009-10-08 Rec Scanwafer As Reusable crucibles and method of manufacturing them
CN101585536B (zh) * 2009-07-04 2011-05-04 大连理工大学 一种提纯太阳能级多晶硅的装置与方法

Also Published As

Publication number Publication date
DE102009015236A1 (de) 2010-10-14
EP2414566A1 (de) 2012-02-08
WO2010112259A1 (de) 2010-10-07
CN102388169A (zh) 2012-03-21
CN102388169B (zh) 2015-03-25
JP2012522710A (ja) 2012-09-27
US20120037065A1 (en) 2012-02-16
DE102009015236B4 (de) 2015-03-05

Similar Documents

Publication Publication Date Title
EP2432001A4 (en) METHOD FOR PRODUCING A SEMICONDUCTOR SUBSTRATE
HK1164383A1 (zh) 用於適用於半導體製造的硅的坩堝
HK1219572A1 (zh) 基於量子阱的半導體器件
EP2519969A4 (en) SEMICONDUCTOR COMPONENT
EP2517245A4 (en) SEMICONDUCTOR COMPONENT
EP2513966A4 (en) SEMICONDUCTOR DEVICE
EP2494599A4 (en) SEMICONDUCTOR DEVICE
EP2497111A4 (en) SEMICONDUCTOR COMPONENT
EP2494596A4 (en) SEMICONDUCTOR DEVICE
EP2491586A4 (en) SEMICONDUCTOR COMPONENT
EP2494597A4 (en) SEMICONDUCTOR COMPONENT
SG10201406934WA (en) Semiconductor device
EP2491585A4 (en) SEMICONDUCTOR DEVICE
EP2486595A4 (en) SEMICONDUCTOR COMPONENT
EP2445011A4 (en) SEMICONDUCTOR DEVICE
EP2432014A4 (en) SEMICONDUCTOR COMPONENT
EP2494595A4 (en) SEMICONDUCTOR DEVICE
EP2469600A4 (en) SEMICONDUCTOR DEVICE
EP2480916A4 (en) SEMICONDUCTOR LUMINAIRE
EP2442355A4 (en) SEMICONDUCTOR DEVICE
EP2497114A4 (en) SEMICONDUCTOR DEVICE
GB0922063D0 (en) Porous silicon
EP2402985A4 (en) METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
EP2444972A4 (en) SEMICONDUCTOR COMPONENT
EP2394955A4 (en) PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20200211