HK1139782A1 - Non-volatile memory with high reliability - Google Patents

Non-volatile memory with high reliability

Info

Publication number
HK1139782A1
HK1139782A1 HK10105683.9A HK10105683A HK1139782A1 HK 1139782 A1 HK1139782 A1 HK 1139782A1 HK 10105683 A HK10105683 A HK 10105683A HK 1139782 A1 HK1139782 A1 HK 1139782A1
Authority
HK
Hong Kong
Prior art keywords
volatile memory
high reliability
reliability
volatile
memory
Prior art date
Application number
HK10105683.9A
Other languages
English (en)
Chinese (zh)
Inventor
‧科斯敏
‧喬治斯卡
‧斯馬然多尤
‧塔切
Original Assignee
半導體元件工業有限責任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體元件工業有限責任公司 filed Critical 半導體元件工業有限責任公司
Publication of HK1139782A1 publication Critical patent/HK1139782A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
HK10105683.9A 2007-05-25 2010-06-09 Non-volatile memory with high reliability HK1139782A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US94037607P 2007-05-25 2007-05-25
US12/106,777 US7830714B2 (en) 2007-05-25 2008-04-21 Non-volatile memory with high reliability
PCT/US2008/064798 WO2008148065A1 (en) 2007-05-25 2008-05-23 Non-volatile memory with high reliability

Publications (1)

Publication Number Publication Date
HK1139782A1 true HK1139782A1 (en) 2010-09-24

Family

ID=40072245

Family Applications (1)

Application Number Title Priority Date Filing Date
HK10105683.9A HK1139782A1 (en) 2007-05-25 2010-06-09 Non-volatile memory with high reliability

Country Status (6)

Country Link
US (1) US7830714B2 (xx)
KR (1) KR101395583B1 (xx)
CN (1) CN101689397B (xx)
DE (1) DE112008001409T5 (xx)
HK (1) HK1139782A1 (xx)
WO (1) WO2008148065A1 (xx)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1397227B1 (it) * 2009-12-30 2013-01-04 St Microelectronics Srl Dispositivo di memoria con programmazione e cancellazione basata su effetto fowler-nordheim
IT1397229B1 (it) * 2009-12-30 2013-01-04 St Microelectronics Srl Dispositivo di memoria ftp programmabile e cancellabile a livello di cella
IT1397228B1 (it) * 2009-12-30 2013-01-04 St Microelectronics Srl Dispositivo di memoria con singolo transistore di selezione
US9990992B2 (en) * 2016-10-25 2018-06-05 Arm Ltd. Method, system and device for non-volatile memory device operation
FR3095526B1 (fr) * 2019-04-25 2022-04-22 St Microelectronics Rousset Procédé d’écriture dans une mémoire EEPROM et circuit intégré correspondant
FR3109239B1 (fr) * 2020-04-14 2022-04-22 St Microelectronics Rousset Procédé d’écriture dans une mémoire non-volatile suivant le vieillissement des cellules mémoires et circuit intégré correspondant.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232634B1 (en) * 1998-07-29 2001-05-15 Motorola, Inc. Non-volatile memory cell and method for manufacturing same
US6160739A (en) * 1999-04-16 2000-12-12 Sandisk Corporation Non-volatile memories with improved endurance and extended lifetime
JP3844930B2 (ja) * 2000-02-09 2006-11-15 株式会社東芝 不揮発性半導体記憶装置
US6925008B2 (en) * 2001-09-29 2005-08-02 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device with a memory unit including not more than two memory cell transistors
US6862223B1 (en) * 2002-07-05 2005-03-01 Aplus Flash Technology, Inc. Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
US7369438B2 (en) * 2004-12-28 2008-05-06 Aplus Flash Technology, Inc. Combo memory design and technology for multiple-function java card, sim-card, bio-passport and bio-id card applications

Also Published As

Publication number Publication date
DE112008001409T5 (de) 2010-04-22
CN101689397B (zh) 2014-12-24
US7830714B2 (en) 2010-11-09
US20080291729A1 (en) 2008-11-27
WO2008148065A1 (en) 2008-12-04
CN101689397A (zh) 2010-03-31
KR20100028037A (ko) 2010-03-11
KR101395583B1 (ko) 2014-05-16

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20210525