HK1130945A1 - Digital alloys and methods for forming the same - Google Patents
Digital alloys and methods for forming the sameInfo
- Publication number
- HK1130945A1 HK1130945A1 HK09108767.5A HK09108767A HK1130945A1 HK 1130945 A1 HK1130945 A1 HK 1130945A1 HK 09108767 A HK09108767 A HK 09108767A HK 1130945 A1 HK1130945 A1 HK 1130945A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- methods
- forming
- same
- digital alloys
- alloys
- Prior art date
Links
- 229910045601 alloy Inorganic materials 0.000 title 1
- 239000000956 alloy Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07K—PEPTIDES
- C07K1/00—General methods for the preparation of peptides, i.e. processes for the organic chemical preparation of peptides or proteins of any length
- C07K1/04—General methods for the preparation of peptides, i.e. processes for the organic chemical preparation of peptides or proteins of any length on carriers
- C07K1/047—Simultaneous synthesis of different peptide species; Peptide libraries
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07K—PEPTIDES
- C07K14/00—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof
- C07K14/435—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from animals; from humans
- C07K14/46—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from animals; from humans from vertebrates
- C07K14/47—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from animals; from humans from vertebrates from mammals
- C07K14/4701—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from animals; from humans from vertebrates from mammals not used
- C07K14/4711—Alzheimer's disease; Amyloid plaque core protein
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07K—PEPTIDES
- C07K7/00—Peptides having 5 to 20 amino acids in a fully defined sequence; Derivatives thereof
- C07K7/04—Linear peptides containing only normal peptide links
- C07K7/06—Linear peptides containing only normal peptide links having 5 to 11 amino acids
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07K—PEPTIDES
- C07K7/00—Peptides having 5 to 20 amino acids in a fully defined sequence; Derivatives thereof
- C07K7/04—Linear peptides containing only normal peptide links
- C07K7/08—Linear peptides containing only normal peptide links having 12 to 20 amino acids
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- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
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- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1391—Processes of manufacture of electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
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- H01M4/62—Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
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- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
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- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/133—Electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
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- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
- H01M4/50—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese
- H01M4/505—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Biophysics (AREA)
- Molecular Biology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Genetics & Genomics (AREA)
- Proteomics, Peptides & Aminoacids (AREA)
- General Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Biochemistry (AREA)
- Electromagnetism (AREA)
- Analytical Chemistry (AREA)
- Zoology (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Biomedical Technology (AREA)
- Neurology (AREA)
- Toxicology (AREA)
- Sustainable Energy (AREA)
- Gastroenterology & Hepatology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Optics & Photonics (AREA)
- Powder Metallurgy (AREA)
- Battery Electrode And Active Subsutance (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80179206P | 2006-05-19 | 2006-05-19 | |
US11/679,726 US8865347B2 (en) | 2001-09-28 | 2007-02-27 | Digital alloys and methods for forming the same |
PCT/US2007/012096 WO2007136841A2 (en) | 2006-05-19 | 2007-05-18 | Digital alloys and methods for forming the same |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1130945A1 true HK1130945A1 (en) | 2010-01-08 |
Family
ID=38626425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK09108767.5A HK1130945A1 (en) | 2006-05-19 | 2009-09-24 | Digital alloys and methods for forming the same |
Country Status (7)
Country | Link |
---|---|
US (1) | US8865347B2 (xx) |
EP (1) | EP2038915B1 (xx) |
JP (1) | JP2009537987A (xx) |
CA (1) | CA2652680A1 (xx) |
HK (1) | HK1130945A1 (xx) |
TW (1) | TW200805690A (xx) |
WO (1) | WO2007136841A2 (xx) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7960715B2 (en) | 2008-04-24 | 2011-06-14 | University Of Iowa Research Foundation | Semiconductor heterostructure nanowire devices |
US8637763B2 (en) * | 2010-05-26 | 2014-01-28 | Translucent, Inc. | Solar cells with engineered spectral conversion |
JP5633842B2 (ja) * | 2010-06-14 | 2014-12-03 | 国立大学法人 奈良先端科学技術大学院大学 | 金属ナノ粒子の選択配置方法 |
KR20120040016A (ko) * | 2010-10-18 | 2012-04-26 | 엘지전자 주식회사 | 태양 전지용 기판 및 태양 전지 |
US8834831B2 (en) | 2011-01-11 | 2014-09-16 | The United States Of America As Represented By The Secretary Of The Army | Controlling morpholoy of titanium oxide using designed peptides |
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US8854361B1 (en) | 2013-03-13 | 2014-10-07 | Cambridgesoft Corporation | Visually augmenting a graphical rendering of a chemical structure representation or biological sequence representation with multi-dimensional information |
AU2014250074B2 (en) | 2013-03-13 | 2019-04-04 | Perkinelmer Informatics, Inc. | Systems and methods for gesture-based sharing of data between separate electronic devices |
US20140274671A1 (en) | 2013-03-15 | 2014-09-18 | Siluria Technologies, Inc. | Catalysts for petrochemical catalysis |
US9430127B2 (en) * | 2013-05-08 | 2016-08-30 | Cambridgesoft Corporation | Systems and methods for providing feedback cues for touch screen interface interaction with chemical and biological structure drawing applications |
US9751294B2 (en) | 2013-05-09 | 2017-09-05 | Perkinelmer Informatics, Inc. | Systems and methods for translating three dimensional graphic molecular models to computer aided design format |
US9730596B2 (en) | 2013-06-28 | 2017-08-15 | Stmicroelectronics, Inc. | Low power biological sensing system |
US11274223B2 (en) | 2013-11-22 | 2022-03-15 | C3 Nano, Inc. | Transparent conductive coatings based on metal nanowires and polymer binders, solution processing thereof, and patterning approaches |
US11343911B1 (en) | 2014-04-11 | 2022-05-24 | C3 Nano, Inc. | Formable transparent conductive films with metal nanowires |
US9183968B1 (en) | 2014-07-31 | 2015-11-10 | C3Nano Inc. | Metal nanowire inks for the formation of transparent conductive films with fused networks |
PL3194070T3 (pl) | 2014-09-17 | 2021-06-14 | Lummus Technology Llc | Katalizatory do utleniającego sprzęgania metanu i utleniającego odwodornienia etanu |
US10347722B2 (en) * | 2015-03-04 | 2019-07-09 | Lehigh University | Artificially engineered III-nitride digital alloy |
WO2018160205A1 (en) | 2017-03-03 | 2018-09-07 | Perkinelmer Informatics, Inc. | Systems and methods for searching and indexing documents comprising chemical information |
US10236517B2 (en) | 2017-08-16 | 2019-03-19 | GM Global Technology Operations LLC | Method for manufacturing and cleaning a stainless steel fuel cell bipolar plate |
WO2021064910A1 (ja) * | 2019-10-02 | 2021-04-08 | シャープ株式会社 | 表示装置、および表示装置の製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6713173B2 (en) | 1996-11-16 | 2004-03-30 | Nanomagnetics Limited | Magnetizable device |
US6815063B1 (en) | 1996-11-16 | 2004-11-09 | Nanomagnetics, Ltd. | Magnetic fluid |
US6576452B1 (en) | 2000-10-04 | 2003-06-10 | Genencor International, Inc. | 2,5-diketo-L-gluconic acid reductases and methods of use |
US20030113714A1 (en) | 2001-09-28 | 2003-06-19 | Belcher Angela M. | Biological control of nanoparticles |
US20030148380A1 (en) | 2001-06-05 | 2003-08-07 | Belcher Angela M. | Molecular recognition of materials |
US20050164515A9 (en) | 2001-06-05 | 2005-07-28 | Belcher Angela M. | Biological control of nanoparticle nucleation, shape and crystal phase |
US20030073104A1 (en) | 2001-10-02 | 2003-04-17 | Belcher Angela M. | Nanoscaling ordering of hybrid materials using genetically engineered mesoscale virus |
DE60233176D1 (de) | 2001-11-08 | 2009-09-10 | Seti Inst | Aus chaperonin-polypeptiden gebildete geordnete biologische nanostrukturen |
US7393476B2 (en) | 2001-11-22 | 2008-07-01 | Gs Yuasa Corporation | Positive electrode active material for lithium secondary cell and lithium secondary cell |
US7217882B2 (en) | 2002-05-24 | 2007-05-15 | Cornell Research Foundation, Inc. | Broad spectrum solar cell |
US7598344B2 (en) | 2002-09-04 | 2009-10-06 | Board Of Regents, The University Of Texas System | Composition, method and use of bi-functional biomaterials |
KR20070007793A (ko) | 2004-02-05 | 2007-01-16 | 메사추세츠 인스티튜트 오브 테크놀로지 | 세포 디스플레이 라이브러리 |
US20060052947A1 (en) | 2004-05-17 | 2006-03-09 | Evelyn Hu | Biofabrication of transistors including field effect transistors |
CN100349306C (zh) | 2004-08-27 | 2007-11-14 | 中国科学院半导体研究所 | 蓝光、黄光量子阱堆叠结构白光发光二极管及制作方法 |
WO2006045076A2 (en) | 2004-10-19 | 2006-04-27 | Massachusetts Institute Of Technology | Virus scaffold for self-assembled, flexible and light lithium battery |
GB0510035D0 (en) | 2005-05-17 | 2005-06-22 | Univ Cranfield | Electroluminescent devices |
US20060286686A1 (en) | 2005-06-15 | 2006-12-21 | Honeywell International, Inc. | Integrated light emitting diode displays using biofabrication |
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EP2038915A2 (en) | 2009-03-25 |
EP2038915B1 (en) | 2014-12-31 |
US20080213663A1 (en) | 2008-09-04 |
TW200805690A (en) | 2008-01-16 |
JP2009537987A (ja) | 2009-10-29 |
WO2007136841A3 (en) | 2008-08-07 |
US8865347B2 (en) | 2014-10-21 |
WO2007136841A2 (en) | 2007-11-29 |
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