HK1127792A1 - Single crystal diamond - Google Patents

Single crystal diamond

Info

Publication number
HK1127792A1
HK1127792A1 HK09105139.2A HK09105139A HK1127792A1 HK 1127792 A1 HK1127792 A1 HK 1127792A1 HK 09105139 A HK09105139 A HK 09105139A HK 1127792 A1 HK1127792 A1 HK 1127792A1
Authority
HK
Hong Kong
Prior art keywords
diamond
single crystal
cvd
substrate
crystal diamond
Prior art date
Application number
HK09105139.2A
Other languages
English (en)
Inventor
Geoffrey Alan Scarsbrook
Philip Maurice Martineau
Daniel James Twitchen
Original Assignee
Element Six Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Element Six Ltd filed Critical Element Six Ltd
Publication of HK1127792A1 publication Critical patent/HK1127792A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
HK09105139.2A 2002-09-20 2009-06-09 Single crystal diamond HK1127792A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0221949.1A GB0221949D0 (en) 2002-09-20 2002-09-20 Single crystal diamond

Publications (1)

Publication Number Publication Date
HK1127792A1 true HK1127792A1 (en) 2009-10-09

Family

ID=9944519

Family Applications (5)

Application Number Title Priority Date Filing Date
HK05110696.1A HK1078906A1 (en) 2002-09-20 2005-11-25 Single crystal diamond
HK09105138.3A HK1127791A1 (en) 2002-09-20 2009-06-09 Single crystal diamond
HK09105139.2A HK1127792A1 (en) 2002-09-20 2009-06-09 Single crystal diamond
HK09105136.5A HK1127789A1 (en) 2002-09-20 2009-06-09 Single crystal diamond
HK09105137.4A HK1127790A1 (en) 2002-09-20 2009-06-09 Single crystal diamond

Family Applications Before (2)

Application Number Title Priority Date Filing Date
HK05110696.1A HK1078906A1 (en) 2002-09-20 2005-11-25 Single crystal diamond
HK09105138.3A HK1127791A1 (en) 2002-09-20 2009-06-09 Single crystal diamond

Family Applications After (2)

Application Number Title Priority Date Filing Date
HK09105136.5A HK1127789A1 (en) 2002-09-20 2009-06-09 Single crystal diamond
HK09105137.4A HK1127790A1 (en) 2002-09-20 2009-06-09 Single crystal diamond

Country Status (17)

Country Link
US (3) US20040177803A1 (xx)
EP (1) EP1543181B1 (xx)
JP (3) JP4949627B2 (xx)
KR (1) KR101078970B1 (xx)
CN (5) CN101319361B (xx)
AT (1) ATE365818T1 (xx)
AU (1) AU2003263447A1 (xx)
CA (1) CA2496710C (xx)
DE (1) DE60314648T2 (xx)
ES (1) ES2287565T3 (xx)
GB (6) GB0221949D0 (xx)
HK (5) HK1078906A1 (xx)
IL (1) IL166897A (xx)
RU (1) RU2332532C2 (xx)
TW (1) TWI323299B (xx)
WO (1) WO2004027123A1 (xx)
ZA (1) ZA200501294B (xx)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100839707B1 (ko) * 2000-06-15 2008-06-19 엘리먼트 씩스 (프티) 리미티드 두꺼운 단결정 다이아몬드 층, 이의 제조방법 및 상기층으로부터 제조된 젬스톤
CA2412853C (en) * 2000-06-15 2009-08-25 Geoffrey Alan Scarsbrook Single crystal diamond prepared by cvd
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
GB0130005D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
US7172655B2 (en) * 2002-09-06 2007-02-06 Daniel James Twitchen Colored diamond
GB0221949D0 (en) 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
KR100683574B1 (ko) * 2004-10-19 2007-02-16 한국과학기술연구원 기하학적 형태의 다이아몬드 쉘 및 그 제조방법
JP5163920B2 (ja) * 2005-03-28 2013-03-13 住友電気工業株式会社 ダイヤモンド単結晶基板の製造方法及びダイヤモンド単結晶基板
WO2007029269A1 (en) * 2005-09-05 2007-03-15 Rajneesh Bhandari Synthesis of large homoepitaxial monocrystalline diamond
EP1957689B1 (en) * 2005-12-09 2011-04-20 Element Six Technologies (PTY) LTD High crystalline quality synthetic diamond
EP2719794B1 (en) 2007-01-22 2018-08-22 Element Six Technologies Limited Plasma etching of diamond surfaces
US8342164B2 (en) * 2008-05-09 2013-01-01 SCIO Diamond Technology Corporation Gemstone production from CVD diamond plate
JP4803464B2 (ja) * 2008-07-04 2011-10-26 独立行政法人産業技術総合研究所 単結晶ダイヤモンドの表面損傷の除去方法
GB0813490D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Solid state material
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
US9157170B2 (en) 2009-12-21 2015-10-13 Element Six Technologies Limited Single crystal diamond material
GB2476306B (en) * 2009-12-21 2012-07-11 Element Six Ltd Single crystal diamond material
GB201000768D0 (en) * 2010-01-18 2010-03-03 Element Six Ltd CVD single crystal diamond material
US9017633B2 (en) * 2010-01-18 2015-04-28 Element Six Technologies Limited CVD single crystal diamond material
GB201021985D0 (en) 2010-12-24 2011-02-02 Element Six Ltd Dislocation engineering in single crystal synthetic diamond material
EP2985368B1 (en) 2013-04-09 2023-08-30 Sumitomo Electric Industries, Ltd. Single crystal diamond and diamond tool
GB201310212D0 (en) * 2013-06-07 2013-07-24 Element Six Ltd Post-synthesis processing of diamond and related super-hard materials
CN106574393B (zh) * 2014-07-22 2019-10-08 住友电气工业株式会社 单晶金刚石及其制造方法、包含单晶金刚石的工具和包含单晶金刚石的部件
JP6041229B2 (ja) * 2015-10-29 2016-12-07 住友電気工業株式会社 ダイヤモンド複合体、ダイヤモンド複合体の製造方法、及び単結晶ダイヤモンドの製造方法
JP6217949B2 (ja) * 2016-11-10 2017-10-25 住友電気工業株式会社 単結晶ダイヤモンド
US11486037B2 (en) 2016-11-10 2022-11-01 Element Six Technologies Limited Synthesis of thick single crystal diamond material via chemical vapour deposition
TWI706061B (zh) * 2017-04-26 2020-10-01 新加坡商二A 科技有限公司 大單晶鑽石及其生產方法
CN107675249B (zh) * 2017-09-08 2020-07-07 西安电子科技大学 单晶金刚石的扩径生长方法
ES2724214B2 (es) 2018-03-01 2020-01-15 Business Res And Diamonds S L Procedimiento para la obtencion de diamantes sinteticos a partir de la sacarosa y equipo para llevar a cabo dicho procedimiento
CN108360065A (zh) * 2018-04-12 2018-08-03 西安交通大学 一种生长单晶金刚石的方法及生长结构
CN108908762A (zh) * 2018-06-15 2018-11-30 西安碳星半导体科技有限公司 Cvd生长宝石级厚单晶金刚石切割方法
CN108754600A (zh) * 2018-06-26 2018-11-06 西安交通大学 一种拼接生长大面积单晶金刚石的方法
CN108677246A (zh) * 2018-06-26 2018-10-19 西安交通大学 一种横向搭桥拼接生长大面积单晶金刚石的方法
GB201811162D0 (en) 2018-07-06 2018-08-29 Element Six Tech Ltd Method of manufacture of single crystal synthetic diamond material
CN108977880A (zh) * 2018-08-29 2018-12-11 西安交通大学 一种交叉拼接生长大面积单晶金刚石的方法
CA3168480A1 (en) * 2020-01-20 2021-07-29 M7D Corporation Method of growing larger diamonds
GB2614522B (en) 2021-10-19 2024-04-03 Element Six Tech Ltd CVD single crystal diamond
GB2614521A (en) 2021-10-19 2023-07-12 Element Six Tech Ltd CVD single crystal diamond

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103994A (ja) * 1987-10-16 1989-04-21 Sumitomo Electric Ind Ltd ダイヤモンドの単結晶成長方法
JP2571795B2 (ja) 1987-11-17 1997-01-16 住友電気工業株式会社 紫色ダイヤモンドおよびその製造方法
US5127983A (en) * 1989-05-22 1992-07-07 Sumitomo Electric Industries, Ltd. Method of producing single crystal of high-pressure phase material
US5360479A (en) * 1990-07-02 1994-11-01 General Electric Company Isotopically pure single crystal epitaxial diamond films and their preparation
US5614019A (en) * 1992-06-08 1997-03-25 Air Products And Chemicals, Inc. Method for the growth of industrial crystals
JPH0687691A (ja) * 1992-09-04 1994-03-29 Sumitomo Electric Ind Ltd ダイヤモンドの製造方法およびダイヤモンドの製造方法に使用するダイヤモンド単結晶基材
US5474021A (en) * 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
JPH06107494A (ja) 1992-09-24 1994-04-19 Sumitomo Electric Ind Ltd ダイヤモンドの気相成長法
JPH06227895A (ja) * 1993-02-04 1994-08-16 Sumitomo Electric Ind Ltd ダイヤモンドの合成法
JP3314444B2 (ja) 1993-03-15 2002-08-12 住友電気工業株式会社 赤色ダイヤモンドおよび桃色ダイヤモンド
JP3484749B2 (ja) 1994-04-04 2004-01-06 住友電気工業株式会社 ダイヤモンドの合成法
JP4291886B2 (ja) * 1994-12-05 2009-07-08 住友電気工業株式会社 低欠陥ダイヤモンド単結晶及びその合成方法
JP4032482B2 (ja) * 1997-04-18 2008-01-16 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
JPH113994A (ja) 1997-06-11 1999-01-06 Miyazaki Oki Electric Co Ltd 突起構造の形成方法、ｌｄｄ構造の形成方法、配線形成方法、およびトレンチ形成方法
JPH1131014A (ja) 1997-07-14 1999-02-02 Sumitomo Heavy Ind Ltd 位置制御方式及び速度制御方式
JPH11300194A (ja) * 1998-04-23 1999-11-02 Sumitomo Electric Ind Ltd 超高圧発生用ダイヤモンドアンビル
CA2412853C (en) * 2000-06-15 2009-08-25 Geoffrey Alan Scarsbrook Single crystal diamond prepared by cvd
KR100839707B1 (ko) * 2000-06-15 2008-06-19 엘리먼트 씩스 (프티) 리미티드 두꺼운 단결정 다이아몬드 층, 이의 제조방법 및 상기층으로부터 제조된 젬스톤
JP3968968B2 (ja) * 2000-07-10 2007-08-29 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法
JP2002265296A (ja) * 2001-03-09 2002-09-18 Kobe Steel Ltd ダイヤモンド薄膜及びその製造方法
GB0130005D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
US7172655B2 (en) * 2002-09-06 2007-02-06 Daniel James Twitchen Colored diamond
GB0221949D0 (en) 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material

Also Published As

Publication number Publication date
CN101319359B (zh) 2012-05-30
HK1078906A1 (en) 2006-03-24
HK1127789A1 (en) 2009-10-09
US20080085233A1 (en) 2008-04-10
AU2003263447A1 (en) 2004-04-08
TW200422446A (en) 2004-11-01
WO2004027123A1 (en) 2004-04-01
CA2496710C (en) 2011-09-06
JP5312281B2 (ja) 2013-10-09
US9518338B2 (en) 2016-12-13
RU2005111972A (ru) 2006-12-10
GB2409468B (en) 2007-03-28
GB0508004D0 (en) 2005-05-25
US20040177803A1 (en) 2004-09-16
RU2332532C2 (ru) 2008-08-27
KR20050067394A (ko) 2005-07-01
ES2287565T3 (es) 2007-12-16
GB2429212B (en) 2007-04-18
EP1543181B1 (en) 2007-06-27
CN1681976A (zh) 2005-10-12
HK1127790A1 (en) 2009-10-09
TWI323299B (en) 2010-04-11
GB0623783D0 (en) 2007-01-10
JP2010001215A (ja) 2010-01-07
IL166897A (en) 2009-12-24
KR101078970B1 (ko) 2011-11-01
EP1543181A1 (en) 2005-06-22
GB0623781D0 (en) 2007-01-10
GB2429214A (en) 2007-02-21
GB2429213B (en) 2007-04-18
GB2429212A (en) 2007-02-21
CN101319361B (zh) 2011-06-29
CN101319358A (zh) 2008-12-10
GB2429213A (en) 2007-02-21
GB0623782D0 (en) 2007-01-10
GB0623784D0 (en) 2007-01-10
GB2409468A (en) 2005-06-29
CN101319360A (zh) 2008-12-10
JP5717518B2 (ja) 2015-05-13
JP4949627B2 (ja) 2012-06-13
DE60314648T2 (de) 2007-10-25
CN101319359A (zh) 2008-12-10
CA2496710A1 (en) 2004-04-01
US20170037539A1 (en) 2017-02-09
CN1681976B (zh) 2010-04-07
GB2429215A (en) 2007-02-21
HK1127791A1 (en) 2009-10-09
ZA200501294B (en) 2006-11-29
ATE365818T1 (de) 2007-07-15
CN101319361A (zh) 2008-12-10
JP2006508881A (ja) 2006-03-16
DE60314648D1 (de) 2007-08-09
CN101319358B (zh) 2012-01-25
US9816202B2 (en) 2017-11-14
GB0221949D0 (en) 2002-10-30
JP2011168487A (ja) 2011-09-01
CN101319360B (zh) 2012-12-26

Similar Documents

Publication Publication Date Title
GB2409468B (en) Single crystal diamond
TW200628642A (en) Ultratough CVD single crystal diamond and three dimensional growth thereof
TW200741041A (en) Colorless single-crystal CVD diamond at rapid growth rate
TW200632154A (en) Process for producing high quality large size silicon carbide crystals
WO2008087791A1 (ja) Ｉｉｉ族窒化物結晶の製造方法、ｉｉｉ族窒化物結晶基板およびｉｉｉ族窒化物半導体デバイス
FR2857982B1 (fr) Procede de fabrication d'une couche epitaxiee
TW200730674A (en) New diamond uses/applications based on single-crystal CVD diamond produced at rapid growth rate
TW200732522A (en) Fabrication method and fabrication apparatus of group III nitride crystal substance
TW200731355A (en) Epitaxial deposition of doped semiconductor materials
EP2327816A3 (en) Method of producing high quality single crystal of silicon carbide
TW200510252A (en) Semiconductor layer
MY159243A (en) Single crystal diamond material
TW200833884A (en) Method for producing self-supporting nitride semiconductor substrate and self-supporting nitride semiconductor substrate
WO2005007935A3 (en) Tough diamonds and method of making thereof
WO2010068419A3 (en) Production of single crystal cvd diamond rapid growth rate
WO2006025593A3 (en) Growth of nitride semiconductor crystals
TW200801226A (en) Chemically attached diamondoids for CVD diamond film nucleation
TWI262969B (en) Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal
TH65250A (th) เพชรชนิดผลึกเดี่ยว
Wang et al. Pseudomorphic stabilization of diamond on non-diamond substrates: Heteroepitaxially grown diamond on a c-BN (111) surface

Legal Events

Date Code Title Description
PE Patent expired

Effective date: 20230915