HK1116934A1 - Integrated filter structure having improved interchannel isolation and method of manufacture - Google Patents

Integrated filter structure having improved interchannel isolation and method of manufacture

Info

Publication number
HK1116934A1
HK1116934A1 HK08105431.8A HK08105431A HK1116934A1 HK 1116934 A1 HK1116934 A1 HK 1116934A1 HK 08105431 A HK08105431 A HK 08105431A HK 1116934 A1 HK1116934 A1 HK 1116934A1
Authority
HK
Hong Kong
Prior art keywords
manufacture
filter structure
integrated filter
improved
interchannel isolation
Prior art date
Application number
HK08105431.8A
Other languages
English (en)
Inventor
C Shastri C Sudhama
Yenting Wen
Original Assignee
Semiconductor Components Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Components Ind filed Critical Semiconductor Components Ind
Publication of HK1116934A1 publication Critical patent/HK1116934A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F2017/0073—Printed inductances with a special conductive pattern, e.g. flat spiral
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F2017/0086—Printed inductances on semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
HK08105431.8A 2006-07-03 2008-05-16 Integrated filter structure having improved interchannel isolation and method of manufacture HK1116934A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/482,238 US7579670B2 (en) 2006-07-03 2006-07-03 Integrated filter having ground plane structure

Publications (1)

Publication Number Publication Date
HK1116934A1 true HK1116934A1 (en) 2009-01-02

Family

ID=38875687

Family Applications (1)

Application Number Title Priority Date Filing Date
HK08105431.8A HK1116934A1 (en) 2006-07-03 2008-05-16 Integrated filter structure having improved interchannel isolation and method of manufacture

Country Status (5)

Country Link
US (1) US7579670B2 (xx)
KR (1) KR101346003B1 (xx)
CN (1) CN101102100B (xx)
HK (1) HK1116934A1 (xx)
TW (1) TWI411227B (xx)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7612397B2 (en) * 2006-11-10 2009-11-03 Sharp Kabushiki Kaisha Memory cell having first and second capacitors with electrodes acting as control gates for nonvolatile memory transistors
CN101730918B (zh) 2007-05-08 2013-03-27 斯卡尼梅特里科斯有限公司 超高速信号传送/接收
US8120142B2 (en) * 2008-04-18 2012-02-21 Alpha & Omega Semiconductor, Ltd. Applying trenched transient voltage suppressor (TVS) technology for distributed low pass filters
US7955941B2 (en) * 2008-09-11 2011-06-07 Semiconductor Components Industries, Llc Method of forming an integrated semiconductor device and structure therefor
JP5299356B2 (ja) * 2010-06-07 2013-09-25 株式会社村田製作所 高周波モジュール
US9780007B2 (en) * 2012-01-04 2017-10-03 Globalfoundries Inc. LCR test circuit structure for detecting metal gate defect conditions
KR101654814B1 (ko) * 2012-09-28 2016-09-22 브이아이디 스케일, 인크. 비디오 코딩에서 크로마 신호 향상을 위한 교차-평면 필터링
US9881579B2 (en) 2013-03-26 2018-01-30 Silicon Works Co., Ltd. Low noise sensitivity source driver for display apparatus
US10026546B2 (en) * 2016-05-20 2018-07-17 Qualcomm Incorported Apparatus with 3D wirewound inductor integrated within a substrate
US10943729B2 (en) * 2018-10-31 2021-03-09 Taiwan Semiconductor Manufacturing Co., Ltd. Entangled inductor structures
DE112019002216T5 (de) 2019-03-08 2021-02-18 Rohm Co., Ltd. Elektronikkomponente
CN111292934B (zh) * 2019-07-19 2022-01-04 展讯通信（上海）有限公司 一种电感结构

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3671793A (en) * 1969-09-16 1972-06-20 Itt High frequency transistor structure having an impedance transforming network incorporated on the semiconductor chip
US4157517A (en) * 1977-12-19 1979-06-05 Motorola, Inc. Adjustable transmission line filter and method of constructing same
US4211941A (en) * 1978-08-03 1980-07-08 Rca Corporation Integrated circuitry including low-leakage capacitance
JPS59159560A (ja) * 1983-03-01 1984-09-10 Toshiba Corp 半導体装置
US4682129A (en) * 1983-03-30 1987-07-21 E. I. Du Pont De Nemours And Company Thick film planar filter connector having separate ground plane shield
JP3039930B2 (ja) * 1988-06-24 2000-05-08 株式会社日立製作所 Ｍｉｓ容量の接続方法
US5019000A (en) * 1989-08-18 1991-05-28 Stephens William H Method and apparatus for preventing eyeglasses from sinking in water
US5939958A (en) * 1997-02-18 1999-08-17 The United States Of America As Represented By The Secretary Of The Navy Microstrip dual mode elliptic filter with modal coupling through patch spacing
US6426683B1 (en) * 1999-11-09 2002-07-30 Motorola, Inc. Integrated filter with improved I/O matching and method of fabrication
US6538300B1 (en) * 2000-09-14 2003-03-25 Vishay Intertechnology, Inc. Precision high-frequency capacitor formed on semiconductor substrate
US6362012B1 (en) * 2001-03-05 2002-03-26 Taiwan Semiconductor Manufacturing Company Structure of merged vertical capacitor inside spiral conductor for RF and mixed-signal applications
US6943737B2 (en) * 2003-08-27 2005-09-13 The United States Of America As Represented By The Secretary Of The Navy GPS microstrip antenna
US7199679B2 (en) * 2004-11-01 2007-04-03 Freescale Semiconductors, Inc. Baluns for multiple band operation
JP2006140807A (ja) * 2004-11-12 2006-06-01 Hioki Ee Corp フィルタ素子
US7466212B2 (en) * 2006-06-16 2008-12-16 Semiconductor Components Industries, L. L. C. Semiconductor filter structure and method of manufacture
US7589392B2 (en) * 2006-06-16 2009-09-15 Semiconductor Components Industries, L.L.C. Filter having integrated floating capacitor and transient voltage suppression structure and method of manufacture

Also Published As

Publication number Publication date
KR20080003735A (ko) 2008-01-08
US7579670B2 (en) 2009-08-25
CN101102100A (zh) 2008-01-09
CN101102100B (zh) 2011-02-02
KR101346003B1 (ko) 2013-12-31
US20080001186A1 (en) 2008-01-03
TW200810351A (en) 2008-02-16
TWI411227B (zh) 2013-10-01

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20210701