HK107797A - Integrated circuit having a boosted node - Google Patents

Integrated circuit having a boosted node

Info

Publication number
HK107797A
HK107797A HK107797A HK107797A HK107797A HK 107797 A HK107797 A HK 107797A HK 107797 A HK107797 A HK 107797A HK 107797 A HK107797 A HK 107797A HK 107797 A HK107797 A HK 107797A
Authority
HK
Hong Kong
Prior art keywords
integrated circuit
boosted node
boosted
node
integrated
Prior art date
Application number
HK107797A
Other languages
English (en)
Inventor
Hyun Lee
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Publication of HK107797A publication Critical patent/HK107797A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
HK107797A 1991-10-24 1997-06-26 Integrated circuit having a boosted node HK107797A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/782,034 US5289025A (en) 1991-10-24 1991-10-24 Integrated circuit having a boosted node

Publications (1)

Publication Number Publication Date
HK107797A true HK107797A (en) 1997-08-22

Family

ID=25124740

Family Applications (1)

Application Number Title Priority Date Filing Date
HK107797A HK107797A (en) 1991-10-24 1997-06-26 Integrated circuit having a boosted node

Country Status (6)

Country Link
US (1) US5289025A (de)
EP (1) EP0539110B1 (de)
JP (1) JPH05243493A (de)
KR (1) KR100278725B1 (de)
DE (1) DE69219270T2 (de)
HK (1) HK107797A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5418476A (en) * 1994-07-28 1995-05-23 At&T Corp. Low voltage output buffer with improved speed
JP3102833B2 (ja) 1994-09-06 2000-10-23 株式会社 沖マイクロデザイン 昇圧回路
US5814875A (en) * 1995-01-31 1998-09-29 Nippon Steel Corporation Semiconductor device and method of manufacturing the same apparatus and method for providing semiconductor devices having a field shield element between devices
US5698877A (en) * 1995-10-31 1997-12-16 Gonzalez; Fernando Charge-pumping to increase electron collection efficiency
US5883423A (en) * 1996-02-23 1999-03-16 National Semiconductor Corporation Decoupling capacitor for integrated circuit signal driver
US6777753B1 (en) * 2000-07-12 2004-08-17 The United States Of America As Represented By The Secretary Of The Navy CMOS devices hardened against total dose radiation effects
US6605973B1 (en) 2002-03-15 2003-08-12 Taiwan Semiconductor Manufacturing Company High voltage discharge circuit
US7829928B2 (en) * 2006-06-26 2010-11-09 System General Corp. Semiconductor structure of a high side driver and method for manufacturing the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits
US4091360A (en) * 1976-09-01 1978-05-23 Bell Telephone Laboratories, Incorporated Dynamic precharge circuitry
US4639622A (en) * 1984-11-19 1987-01-27 International Business Machines Corporation Boosting word-line clock circuit for semiconductor memory
US4660177A (en) * 1985-01-14 1987-04-21 American Telephone And Telegraph Company Dual port complementary memory
US4649523A (en) * 1985-02-08 1987-03-10 At&T Bell Laboratories Semiconductor memory with boosted word line
US4583157A (en) * 1985-02-08 1986-04-15 At&T Bell Laboratories Integrated circuit having a variably boosted node
EP0300184B1 (de) * 1987-06-10 1992-08-26 Siemens Aktiengesellschaft Schaltungsanordnung in einer integrierten Halbleiterschaltung
JPH0713871B2 (ja) * 1987-06-11 1995-02-15 三菱電機株式会社 ダイナミツクｒａｍ
US4905073A (en) * 1987-06-22 1990-02-27 At&T Bell Laboratories Integrated circuit with improved tub tie
JPH03191192A (ja) * 1989-12-20 1991-08-21 Kenzo Kouchi ドア構造
GB9007791D0 (en) * 1990-04-06 1990-06-06 Foss Richard C High voltage boosted wordline supply charge pump and regulator for dram

Also Published As

Publication number Publication date
US5289025A (en) 1994-02-22
KR930009056A (ko) 1993-05-22
DE69219270T2 (de) 1997-08-07
JPH05243493A (ja) 1993-09-21
KR100278725B1 (ko) 2001-02-01
EP0539110A1 (de) 1993-04-28
DE69219270D1 (de) 1997-05-28
EP0539110B1 (de) 1997-04-23

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)