HK1059683A1 - Self-aligned non-volatile memory cell - Google Patents

Self-aligned non-volatile memory cell

Info

Publication number
HK1059683A1
HK1059683A1 HK04102566A HK04102566A HK1059683A1 HK 1059683 A1 HK1059683 A1 HK 1059683A1 HK 04102566 A HK04102566 A HK 04102566A HK 04102566 A HK04102566 A HK 04102566A HK 1059683 A1 HK1059683 A1 HK 1059683A1
Authority
HK
Hong Kong
Prior art keywords
self
memory cell
volatile memory
aligned non
aligned
Prior art date
Application number
HK04102566A
Other languages
English (en)
Inventor
Bohumil Lojek
Alan L Renninger
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Publication of HK1059683A1 publication Critical patent/HK1059683A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
HK04102566A 2000-11-30 2004-04-13 Self-aligned non-volatile memory cell HK1059683A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/727,571 US6479351B1 (en) 2000-11-30 2000-11-30 Method of fabricating a self-aligned non-volatile memory cell
PCT/US2001/032157 WO2002045176A1 (en) 2000-11-30 2001-10-15 Self-aligned non-volatile memory cell

Publications (1)

Publication Number Publication Date
HK1059683A1 true HK1059683A1 (en) 2004-07-09

Family

ID=24923175

Family Applications (1)

Application Number Title Priority Date Filing Date
HK04102566A HK1059683A1 (en) 2000-11-30 2004-04-13 Self-aligned non-volatile memory cell

Country Status (11)

Country Link
US (3) US6479351B1 (xx)
EP (1) EP1340264A1 (xx)
JP (1) JP2004519094A (xx)
KR (1) KR20030057560A (xx)
CN (1) CN1220274C (xx)
AU (1) AU2002214585A1 (xx)
CA (1) CA2427232A1 (xx)
HK (1) HK1059683A1 (xx)
NO (1) NO20032188L (xx)
TW (1) TW515051B (xx)
WO (1) WO2002045176A1 (xx)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6624029B2 (en) * 2000-11-30 2003-09-23 Atmel Corporation Method of fabricating a self-aligned non-volatile memory cell
DE10209784A1 (de) * 2001-09-01 2003-12-04 Univ Stuttgart Inst Fuer Chemi Sulfinatgruppen enthaltende Oligomere und Polymere und Verfahren zu ihrer Herstellung
US6831325B2 (en) * 2002-12-20 2004-12-14 Atmel Corporation Multi-level memory cell with lateral floating spacers
US6767791B1 (en) * 2003-02-10 2004-07-27 Advanced Micro Devices, Inc. Structure and method for suppressing oxide encroachment in a floating gate memory cell
US6998670B2 (en) * 2003-04-25 2006-02-14 Atmel Corporation Twin EEPROM memory transistors with subsurface stepped floating gates
US6888192B2 (en) * 2003-04-25 2005-05-03 Atmel Corporation Mirror image non-volatile memory cell transistor pairs with single poly layer
US6919242B2 (en) * 2003-04-25 2005-07-19 Atmel Corporation Mirror image memory cell transistor pairs featuring poly floating spacers
US6822285B1 (en) * 2003-07-31 2004-11-23 Atmel Corporation EEPROM with multi-member floating gate
US20050239250A1 (en) * 2003-08-11 2005-10-27 Bohumil Lojek Ultra dense non-volatile memory array
JP4521597B2 (ja) * 2004-02-10 2010-08-11 ルネサスエレクトロニクス株式会社 半導体記憶装置およびその製造方法
US7098106B2 (en) * 2004-07-01 2006-08-29 Atmel Corporation Method of making mirror image memory cell transistor pairs featuring poly floating spacers
US20060046402A1 (en) * 2004-08-31 2006-03-02 Micron Technology, Inc. Flash cell structures and methods of formation
US8099783B2 (en) * 2005-05-06 2012-01-17 Atmel Corporation Security method for data protection
US20080119022A1 (en) * 2006-11-22 2008-05-22 Atmel Corporation Method of making eeprom transistors
KR101334844B1 (ko) * 2011-12-29 2013-12-05 주식회사 동부하이텍 싱글 폴리형 이이피롬과 그 제조 방법
CN104465353B (zh) * 2014-11-28 2018-01-26 上海华力微电子有限公司 Ono介质层的制备方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833096A (en) 1988-01-19 1989-05-23 Atmel Corporation EEPROM fabrication process
US5021848A (en) 1990-03-13 1991-06-04 Chiu Te Long Electrically-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area and the method of fabricating thereof
US5087584A (en) * 1990-04-30 1992-02-11 Intel Corporation Process for fabricating a contactless floating gate memory array utilizing wordline trench vias
US5108939A (en) * 1990-10-16 1992-04-28 National Semiconductor Corp. Method of making a non-volatile memory cell utilizing polycrystalline silicon spacer tunnel region
US5338952A (en) * 1991-06-07 1994-08-16 Sharp Kabushiki Kaisha Non-volatile memory
US5268585A (en) * 1991-07-01 1993-12-07 Sharp Kabushiki Kaisha Non-volatile memory and method of manufacturing the same
US5618742A (en) 1992-01-22 1997-04-08 Macronix Internatioal, Ltd. Method of making flash EPROM with conductive sidewall spacer contacting floating gate
US5544103A (en) * 1992-03-03 1996-08-06 Xicor, Inc. Compact page-erasable eeprom non-volatile memory
US5477068A (en) 1992-03-18 1995-12-19 Rohm Co., Ltd. Nonvolatile semiconductor memory device
JP3317459B2 (ja) * 1993-04-30 2002-08-26 ローム株式会社 不揮発性記憶素子およびこれを利用した不揮発性記憶装置、この記憶装置の駆動方法、ならびにこの記憶素子の製造方法
US5640031A (en) 1993-09-30 1997-06-17 Keshtbod; Parviz Spacer flash cell process
US5479368A (en) 1993-09-30 1995-12-26 Cirrus Logic, Inc. Spacer flash cell device with vertically oriented floating gate
GB2292008A (en) * 1994-07-28 1996-02-07 Hyundai Electronics Ind A split gate type flash eeprom cell
US5543339A (en) * 1994-08-29 1996-08-06 Motorola, Inc. Process for forming an electrically programmable read-only memory cell
JP3403877B2 (ja) 1995-10-25 2003-05-06 三菱電機株式会社 半導体記憶装置とその製造方法
KR100192546B1 (ko) * 1996-04-12 1999-06-15 구본준 플래쉬 메모리 및 이의 제조방법
US5703388A (en) * 1996-07-19 1997-12-30 Mosel Vitelic Inc. Double-poly monos flash EEPROM cell
US5793079A (en) * 1996-07-22 1998-08-11 Catalyst Semiconductor, Inc. Single transistor non-volatile electrically alterable semiconductor memory device
DE19638969C2 (de) 1996-09-23 2002-05-16 Mosel Vitelic Inc EEPROM mit einem Polydistanz-Floating-Gate und Verfahren zu deren Herstellung
US5963806A (en) 1996-12-09 1999-10-05 Mosel Vitelic, Inc. Method of forming memory cell with built-in erasure feature
US6392267B1 (en) * 1997-04-25 2002-05-21 Alliance Semiconductor Corporation Flash EPROM array with self-aligned source contacts and programmable sector erase architecture
US6060766A (en) * 1997-08-25 2000-05-09 Advanced Micro Devices, Inc. Protection of hydrogen sensitive regions in semiconductor devices from the positive charge associated with plasma deposited barriers or layers
US5879993A (en) * 1997-09-29 1999-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride spacer technology for flash EPROM
US5918124A (en) * 1997-10-06 1999-06-29 Vanguard International Semiconductor Corporation Fabrication process for a novel multi-storage EEPROM cell
JP3183396B2 (ja) 1997-11-20 2001-07-09 日本電気株式会社 不揮発性半導体記憶装置およびその製造方法
JPH11186416A (ja) 1997-12-19 1999-07-09 Rohm Co Ltd 不揮発性半導体記憶装置およびその製造方法
US5972752A (en) 1997-12-29 1999-10-26 United Semiconductor Corp. Method of manufacturing a flash memory cell having a tunnel oxide with a long narrow top profile
US6091101A (en) * 1998-03-30 2000-07-18 Worldwide Semiconductor Manufacturing Corporation Multi-level flash memory using triple well
US6043530A (en) 1998-04-15 2000-03-28 Chang; Ming-Bing Flash EEPROM device employing polysilicon sidewall spacer as an erase gate
TW390028B (en) * 1998-06-08 2000-05-11 United Microelectronics Corp A flash memory structure and its manufacturing
US5879992A (en) * 1998-07-15 1999-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating step poly to improve program speed in split gate flash
US6074914A (en) 1998-10-30 2000-06-13 Halo Lsi Design & Device Technology, Inc. Integration method for sidewall split gate flash transistor
US6160287A (en) * 1998-12-08 2000-12-12 United Microelectronics Corp. Flash memory
TW444402B (en) * 1999-03-11 2001-07-01 Mosel Vitelic Inc Flash memory cell and its manufacturing method
KR100308128B1 (ko) * 1999-08-24 2001-11-01 김영환 비휘발성 메모리 소자 및 그의 제조 방법
US6465835B1 (en) * 1999-09-27 2002-10-15 Advanced Micro Devices, Inc. Charge gain/charge loss junction leakage prevention for flash technology by using double isolation/capping layer between lightly doped drain and gate
US20020000605A1 (en) * 2000-06-28 2002-01-03 Chun-Mai Liu Method of fabricating high-coupling ratio split gate flash memory cell array

Also Published As

Publication number Publication date
WO2002045176A1 (en) 2002-06-06
TW515051B (en) 2002-12-21
AU2002214585A1 (en) 2002-06-11
USRE40486E1 (en) 2008-09-09
KR20030057560A (ko) 2003-07-04
NO20032188D0 (no) 2003-05-14
US20020063278A1 (en) 2002-05-30
CN1478303A (zh) 2004-02-25
US6479351B1 (en) 2002-11-12
JP2004519094A (ja) 2004-06-24
CN1220274C (zh) 2005-09-21
EP1340264A1 (en) 2003-09-03
NO20032188L (no) 2003-07-17
WO2002045176B1 (en) 2002-08-22
US6841823B2 (en) 2005-01-11
CA2427232A1 (en) 2002-06-06

Similar Documents

Publication Publication Date Title
EP1220318A4 (en) NON-VOLATILE MEMORY
HK1051600A1 (en) Memory cell structure
IL147119A0 (en) High density non-volatile memory device
IL152624A0 (en) Programming of nonvolatile memory cells
GB2368983B (en) Non-volatile memory device
EP1282133A4 (en) SEMICONDUCTOR MEMORY
HK1044058A1 (en) Solid-state mass memory storage device.
AU2002366471A1 (en) Non-volatile memory
AU1446700A (en) Nonvolatile memory
SG108925A1 (en) Non-volatile memory cells
HK1059683A1 (en) Self-aligned non-volatile memory cell
GB0011438D0 (en) Memory aid
GB2369694B (en) Efficient memory modification tracking
AU2002232848A1 (en) Non-volatile magnetic memory device
SG87938A1 (en) Flash memory cell structure with improved channel punch-through characteristics
SG90773A1 (en) A method to form non-volatile memory cells
EP1324205A4 (en) MEMORY MODULE
SG84558A1 (en) Split gate memory cell
EP1343171A4 (en) MEMORY MATRIX
AU6433099A (en) Nonvolatile memory
AU2001281125A1 (en) Non-volatile memory with source side boron implantation
AU3607400A (en) Nonvolatile memory
AU1368402A (en) Cell reprogramming
AU2002230574A1 (en) Doping for flash memory cell
GB2380614B (en) Electrochemical cells

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20091015