HK1044666A1 - 從霍爾電流離子源鍍上仿鑽石的碳塗層的方法及設備 - Google Patents
從霍爾電流離子源鍍上仿鑽石的碳塗層的方法及設備Info
- Publication number
- HK1044666A1 HK1044666A1 HK02103981.3A HK02103981A HK1044666A1 HK 1044666 A1 HK1044666 A1 HK 1044666A1 HK 02103981 A HK02103981 A HK 02103981A HK 1044666 A1 HK1044666 A1 HK 1044666A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- hall
- diamond
- deposition
- ion source
- current ion
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8408—Processes or apparatus specially adapted for manufacturing record carriers protecting the magnetic layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/103—Diamond-like carbon coating, i.e. DLC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/103—Diamond-like carbon coating, i.e. DLC
- Y10S427/104—Utilizing low energy electromagnetic radiation, e.g. microwave, radio wave, IR, UV, visible, actinic laser
Landscapes
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/243,913 US6086962A (en) | 1997-07-25 | 1999-02-03 | Method for deposition of diamond-like carbon and silicon-doped diamond-like carbon coatings from a hall-current ion source |
PCT/US2000/003004 WO2000047023A1 (en) | 1999-02-03 | 2000-02-02 | Method and apparatus for deposition of diamond-like carbon coatings from a hall-current ion source |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1044666A1 true HK1044666A1 (zh) | 2002-10-25 |
Family
ID=22920638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK02103981.3A HK1044666A1 (zh) | 1999-02-03 | 2002-05-28 | 從霍爾電流離子源鍍上仿鑽石的碳塗層的方法及設備 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6086962A (zh) |
EP (1) | EP1157598B1 (zh) |
JP (1) | JP2002541604A (zh) |
HK (1) | HK1044666A1 (zh) |
WO (1) | WO2000047023A1 (zh) |
Families Citing this family (63)
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US6312766B1 (en) * | 1998-03-12 | 2001-11-06 | Agere Systems Guardian Corp. | Article comprising fluorinated diamond-like carbon and method for fabricating article |
US6277480B1 (en) * | 1999-05-03 | 2001-08-21 | Guardian Industries Corporation | Coated article including a DLC inclusive layer(s) and a layer(s) deposited using siloxane gas, and corresponding method |
US6870164B1 (en) * | 1999-10-15 | 2005-03-22 | Kaufman & Robinson, Inc. | Pulsed operation of hall-current ion sources |
US7194801B2 (en) * | 2000-03-24 | 2007-03-27 | Cymbet Corporation | Thin-film battery having ultra-thin electrolyte and associated method |
US6409104B1 (en) * | 2000-04-19 | 2002-06-25 | Ford Global Technologies, Inc. | Silicon-doped amorphous carbon coating for paint bell atomizers |
US6524755B2 (en) | 2000-09-07 | 2003-02-25 | Gray Scale Technologies, Inc. | Phase-shift masks and methods of fabrication |
WO2002062113A1 (fr) * | 2001-02-01 | 2002-08-08 | Zakrytoe Aktsionernoe Obschestvo 'patinor Coatings Limited' | Source d'impulsions du plasma de carbone |
US6750600B2 (en) * | 2001-05-03 | 2004-06-15 | Kaufman & Robinson, Inc. | Hall-current ion source |
JP4199440B2 (ja) * | 2001-06-29 | 2008-12-17 | 日本電気株式会社 | 超強度弾性ダイヤモンド状炭素の形成方法 |
US6815054B1 (en) * | 2001-07-26 | 2004-11-09 | Seagate Technology Llc | Ultra-thin, corrosion resistant, hydrogenated carbon overcoats by combined sputtering and PECVD |
US20080178477A1 (en) * | 2006-12-19 | 2008-07-31 | Acme United Corporation | Cutting Instrument |
JP4153212B2 (ja) * | 2002-02-04 | 2008-09-24 | 富士通株式会社 | テトラヘドラルアモルファスカーボン膜およびその製造方法 |
US7198699B2 (en) * | 2002-05-06 | 2007-04-03 | Guardian Industries Corp. | Sputter coating apparatus including ion beam source(s), and corresponding method |
US6988463B2 (en) * | 2002-10-18 | 2006-01-24 | Guardian Industries Corp. | Ion beam source with gas introduced directly into deposition/vacuum chamber |
US7148079B1 (en) * | 2002-11-01 | 2006-12-12 | Advanced Micro Devices, Inc. | Diamond like carbon silicon on insulator substrates and methods of fabrication thereof |
US20040131760A1 (en) * | 2003-01-02 | 2004-07-08 | Stuart Shakespeare | Apparatus and method for depositing material onto multiple independently moving substrates in a chamber |
US6906436B2 (en) * | 2003-01-02 | 2005-06-14 | Cymbet Corporation | Solid state activity-activated battery device and method |
US7603144B2 (en) * | 2003-01-02 | 2009-10-13 | Cymbet Corporation | Active wireless tagging system on peel and stick substrate |
US7294209B2 (en) * | 2003-01-02 | 2007-11-13 | Cymbet Corporation | Apparatus and method for depositing material onto a substrate using a roll-to-roll mask |
US6878404B2 (en) * | 2003-02-06 | 2005-04-12 | Guardian Industries Corp. | Method of depositing DLC on substrate |
US20040222594A1 (en) * | 2003-05-08 | 2004-11-11 | Dresser-Rand Company | Oil film sealing device for a rotating shaft |
US6995079B2 (en) * | 2003-08-29 | 2006-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Ion implantation method and method for manufacturing semiconductor device |
US7344760B1 (en) | 2003-09-12 | 2008-03-18 | The United States Of America As Represented By The Secretary Of The Navy | Wear-resistant electrically conductive body |
US20050074636A1 (en) * | 2003-10-03 | 2005-04-07 | Fuji Photo Film Co., Ltd. | Magnetic recording medium and method for producing the same |
US20050164047A1 (en) * | 2003-12-19 | 2005-07-28 | Adolph Mondry | Voltage dosimeter-system and method for supplying variable voltage to an electric circuit |
EP1714333A2 (en) * | 2004-01-06 | 2006-10-25 | Cymbet Corporation | Layered barrier structure having one or more definable layers and method |
US20060099461A1 (en) * | 2004-11-05 | 2006-05-11 | Seagate Technology Llc | Magnetic recording system with continuous lubrication of recording media |
US20060286292A1 (en) * | 2005-06-13 | 2006-12-21 | Hitachi Global Storage Technologies Netherlands B.V. | Fabricating thin-film magnetic recording heads using multi-layer DLC-type protective coatings |
US7776478B2 (en) * | 2005-07-15 | 2010-08-17 | Cymbet Corporation | Thin-film batteries with polymer and LiPON electrolyte layers and method |
US20070012244A1 (en) * | 2005-07-15 | 2007-01-18 | Cymbet Corporation | Apparatus and method for making thin-film batteries with soft and hard electrolyte layers |
WO2007011899A2 (en) | 2005-07-15 | 2007-01-25 | Cymbet Corporation | Thin-film batteries with polymer and lipon electrolyte layers and method |
IL170401A (en) * | 2005-08-21 | 2012-03-29 | Dialit Ltd | Plasma emitter and method utilizing the same |
US7850828B2 (en) * | 2006-09-15 | 2010-12-14 | Cardinal Cg Company | Enhanced virtual anode |
US7825601B2 (en) * | 2007-11-28 | 2010-11-02 | Mark Edward Morehouse | Axial Hall accelerator with solenoid field |
US20090200494A1 (en) * | 2008-02-11 | 2009-08-13 | Varian Semiconductor Equipment Associates, Inc. | Techniques for cold implantation of carbon-containing species |
US8197908B2 (en) * | 2008-03-14 | 2012-06-12 | Hestia Tec, Llc | Method for preparing electrically conducting materials |
US8138677B2 (en) * | 2008-05-01 | 2012-03-20 | Mark Edward Morehouse | Radial hall effect ion injector with a split solenoid field |
US8630041B2 (en) * | 2009-07-17 | 2014-01-14 | International Business Machines Corporation | Data storage assembly with diamond like carbon antireflective layer |
US8164760B2 (en) * | 2010-03-11 | 2012-04-24 | Western Digital (Fremont), Llc | Method and system for interrogating the thickness of a carbon layer |
JP5574165B2 (ja) * | 2010-05-31 | 2014-08-20 | 株式会社ジェイテクト | 被覆部材の製造方法 |
US8298609B1 (en) | 2010-06-14 | 2012-10-30 | Wd Media, Inc. | Method and system for interrogating the thickness of a carbon layer |
US8508134B2 (en) * | 2010-07-29 | 2013-08-13 | Evgeny Vitalievich Klyuev | Hall-current ion source with improved ion beam energy distribution |
US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US9853325B2 (en) | 2011-06-29 | 2017-12-26 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US11996517B2 (en) | 2011-06-29 | 2024-05-28 | Space Charge, LLC | Electrochemical energy storage devices |
KR101309984B1 (ko) * | 2011-09-26 | 2013-09-17 | 한국생산기술연구원 | 기판 증착 장치 및 그의 기판 증착 방법 |
US9793098B2 (en) | 2012-09-14 | 2017-10-17 | Vapor Technologies, Inc. | Low pressure arc plasma immersion coating vapor deposition and ion treatment |
US10056237B2 (en) | 2012-09-14 | 2018-08-21 | Vapor Technologies, Inc. | Low pressure arc plasma immersion coating vapor deposition and ion treatment |
US9412569B2 (en) * | 2012-09-14 | 2016-08-09 | Vapor Technologies, Inc. | Remote arc discharge plasma assisted processes |
US20150064365A1 (en) * | 2013-08-29 | 2015-03-05 | Seagate Technology Llc | Methods of forming films |
WO2015112661A1 (en) * | 2014-01-23 | 2015-07-30 | Isoflux Incorporated | Open drift field sputtering cathode |
ES2706530T3 (es) | 2014-10-29 | 2019-03-29 | Ppg Ind Ohio Inc | Sistema de revestimiento protector para sustrato plástico |
CN104593724A (zh) * | 2015-01-13 | 2015-05-06 | 上海应用技术学院 | 掺杂硅元素的类金刚石涂层的制备工艺 |
CN107208249B (zh) | 2015-02-03 | 2019-08-20 | 卡迪奈尔镀膜玻璃公司 | 包括气体分配系统的喷溅装置 |
US9837107B2 (en) | 2016-02-12 | 2017-12-05 | International Business Machines Corporation | Tape head with electrically conducting surface to reduce triboelectric charging |
KR102637922B1 (ko) * | 2016-03-10 | 2024-02-16 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 안정화 방법 및 이를 이용한 증착 방법 |
CN106756858B (zh) * | 2016-11-14 | 2019-07-05 | 北京师范大学 | 一种圆珠笔笔珠的表面改性方法 |
CN106676493B (zh) * | 2016-11-14 | 2019-10-01 | 丁库克 | 一种圆珠笔笔托的表面改性方法 |
US9934929B1 (en) | 2017-02-03 | 2018-04-03 | Colorado State University Research Foundation | Hall current plasma source having a center-mounted or a surface-mounted cathode |
CN107142478B (zh) * | 2017-05-08 | 2019-06-04 | 北京师范大学 | 一种新型耐磨耐腐蚀涂层 |
WO2019173626A1 (en) | 2018-03-07 | 2019-09-12 | Space Charge, LLC | Thin-film solid-state energy-storage devices |
CN113463064A (zh) * | 2021-09-03 | 2021-10-01 | 长沙中金智能装备有限公司 | 一种钢筋撕碎用超硬刀盘及制备方法 |
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US4541890A (en) * | 1982-06-01 | 1985-09-17 | International Business Machines Corporation | Hall ion generator for working surfaces with a low energy high intensity ion beam |
JPS6161345A (ja) * | 1984-08-31 | 1986-03-29 | Univ Kyoto | マグネトロン補助放電付ホ−ルアクセラレ−タ |
US4862032A (en) | 1986-10-20 | 1989-08-29 | Kaufman Harold R | End-Hall ion source |
US5455081A (en) * | 1990-09-25 | 1995-10-03 | Nippon Steel Corporation | Process for coating diamond-like carbon film and coated thin strip |
US5616179A (en) * | 1993-12-21 | 1997-04-01 | Commonwealth Scientific Corporation | Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films |
US5508368A (en) * | 1994-03-03 | 1996-04-16 | Diamonex, Incorporated | Ion beam process for deposition of highly abrasion-resistant coatings |
US5618619A (en) | 1994-03-03 | 1997-04-08 | Monsanto Company | Highly abrasion-resistant, flexible coatings for soft substrates |
US5576600A (en) * | 1994-12-23 | 1996-11-19 | Dynatenn, Inc. | Broad high current ion source |
US5653812A (en) * | 1995-09-26 | 1997-08-05 | Monsanto Company | Method and apparatus for deposition of diamond-like carbon coatings on drills |
US6086796A (en) * | 1997-07-02 | 2000-07-11 | Diamonex, Incorporated | Diamond-like carbon over-coats for optical recording media devices and method thereof |
US5973447A (en) | 1997-07-25 | 1999-10-26 | Monsanto Company | Gridless ion source for the vacuum processing of materials |
-
1999
- 1999-02-03 US US09/243,913 patent/US6086962A/en not_active Expired - Lifetime
-
2000
- 2000-02-02 EP EP00919266A patent/EP1157598B1/en not_active Expired - Lifetime
- 2000-02-02 JP JP2000597985A patent/JP2002541604A/ja not_active Withdrawn
- 2000-02-02 WO PCT/US2000/003004 patent/WO2000047023A1/en active Application Filing
- 2000-07-11 US US09/613,684 patent/US6504294B1/en not_active Expired - Lifetime
-
2002
- 2002-05-28 HK HK02103981.3A patent/HK1044666A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US6086962A (en) | 2000-07-11 |
JP2002541604A (ja) | 2002-12-03 |
EP1157598A1 (en) | 2001-11-28 |
EP1157598A4 (en) | 2006-09-27 |
EP1157598B1 (en) | 2012-11-14 |
WO2000047023A1 (en) | 2000-08-10 |
US6504294B1 (en) | 2003-01-07 |
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