IL170401A

IL170401A - Plasma emitter and method utilizing the same

Info

Publication number: IL170401A
Application number: IL17040105A
Authority: IL
Original assignee: Dialit Ltd
Priority date: 2005-08-21
Filing date: 2005-08-21
Publication date: 2012-03-29
Also published as: WO2007023489A1

Claims

1. A method of plasma processing; said method comprising: a. ejecting ion plasma from retrograded motioned spots originated from a surface of a cooled cathode in a vacuum, such that a current Hall layer in a cross magnetic field lays in perpendicular to the cathode and anode is obtained; and such as a plasma comprising warm electrons characterized by electron temperature of about 3 eV and ions, particularly cupper ions, are emitted to the vacuum applied between said cathode and said anode; b. obtaining hot electrons characterized by electron temperature of about 10 to 15 eV; c. feeding at least a portion of the same towards a slit comprising a shim magnetic field; d. forcing hottest electrons to penetrate said slit; e. interacting said electrons with molecules of atoms of operational gas, preferably argon or carbon); f. accelerating said ions of said operating gas with mainly one positive charge, along an ion tangent conic surface, by a means of at least one plasma lens; and, g. cojointly directing said ions of said operating gas and said hot electrons an object to be processed.

2. The method according to claim 1, wherein the high density plasma is provided in either a series of pulses and/or in a stationary manner.

3. The method according to claim 1 , comprising accommodating a substrate to be treated in a vacuum in a predetermined environment selected from a diluent, solvent, solution, liquefied metal or any other composition in the gas, liquid or solid phase, such as an effective thermal conductivity between said substrate and its surroundings.

4. The method according to claim 1 , wherein the focused region is between about 2 to 40 mm, preferably about 2 mm, such as that hot plasma is provided by applying only log energy, preferably about 100 to 500 eV. he method according to claim 1 of utilizing the obtained high density plasma, for treating at one or more pre-polished; substrates, wherein the Debye radius of said plasma is close to the roughness of said substrates. he method according to claim 5, wherein the Debye radius ranges between about 0.1 μηι to about 10 μηι. , A method of ultra-polishing one or more substrates according to claim 5, comprising a. emitting high density plasma towards said substrates; b. charging its peaks with a negative electrical charge; c. bombarding said charged peaks by said plasma ions; d. spattering said peaks to about 0.1% to about 10% of said plasma Debye radius. The method according to claim 1 especially adapted for crystal growth, comprising a. providing processors of carbon as the operating gas; b. obtaining high density plasma .with worm or hot electrons characterized by electron temperature of about 5 to about 10 eV); c. providing an orifice which is perpendicular to the main longitudinal axis of the plasma cone; wherein the diameter of said orifice is higher than focus of the hyperbolic carbon beam and further wherein the diameter of said orifice is lower than the diameter of the maximum converge of the hydrogen beam such as the hydrogen ions are not penetrating through said orifice; and, d. accumulating of said carbon ion with energy of about 100 eV to form a homogeneous tetrahedral carbons bonds. i The method according to claim1 8, wherein the processors of carbon operating gas is selected from ethanol, methanol, propanol, butanol, methane, ethane, propane, butane, acetone, low; molecular ketones, low molecular aldehydes, kerosene or any other either oxygen or chlorine free carbohydrates. . The method of crystal growing according to claim 8, wherein the accelerated ion voltage of the carbon ions is vaiied along the process from 90 to 150 V. The method according to claim 8, wherein the penetration of the hydrogen ions throughout the orifice is prevented, comprising converting said hydrogen ions to H2 gas which is further evacuated by applying effective vacuum. The method according to claim 1 or to its dependent claims, comprising holding the substrate to be treated by a means of a cooled holder which either non-conductive or conductive under floating potential substrate A cold cathode unit comprising hyperbolical plasma beam source 1000 hermetically attached to a working vacuum chamber 3000 with a plurality of samples holder 3100; vacuum pumping system 4000 in communication with chamber 3000; wherein said plasma beam source 1000 is adapted for ejecting ion plasma from retrograded motioned spots originated from a surface of a cooled cathode in a vacuum, such that a current hall layer in a cross magnetic field lays in perpendicular to the cathode and anode is obtained; and such as a plasma comprising worm electrons characterized by electron temperature of about 3 eV electrons and ions, particularly cupper ions, are emitted to the vacuum applied between said cathode and said anode; for obtaining hot electrons characterized by electron temperature of about 10 to 15 eV; for feeding at least a portion of the same towards a slit comprising a shim magnetic field; for forcing hottest electrons to penetrate said slit; for interacting said electrons with molecules of atoms of operational gas, preferably, argon or i carbon, provided from an operational gas feeding system 5000; for accelerating said ions of said operating gas with mainly one positive charge, along an ion tangent conic surface; and for cojointly directing said ions of said operating gas and said hot electrons an object to be processed. The cold cathode unit according to claim 14, wherein hyperbolical plasma beam source 1000 comprises inter alia ion source 100 and plasma emitter of electrons 200; said ion source 100 comprises elements selected from an earthed steel shell 110, gas discharge chamber 1 14, magnetic field generating means 130, anode, e.g., hollow anode, 1 12, electric feed through 1 13, e.g., 2 pieces; shell 1 10 houses a magnetic field generating means 130; a permanent magnet or electromagnetic coil may serves as such magnetic field generating means; the coaxially arranged magnetic field generating means 130 is fixed to the inner surface of shell 110 so as to obtain a conical magnetic fipld within the conical slit of the ion source 100; a positively biased anode 112 is allocated on a short distance from the conical magnetic slit between the shell 1 10 and inner ring 111 ; conical slit, i.e., a magnetic gap, allows the generated ion beam to exit the ion source; anode 1 12 is connected to the power supply 100 through a pair of electrical feed troughs 113, which may be utilized also^or cooling the anode 1 12 by liquid or gaseous coolant, e.g., water, ozone-friendly Freon; an operational gas is fed by feeding system 5000 to gas discharge chamber 1 17 of the ion source 100 through the high-speed gas pulse valve 121, by feeding pipe 120; annular cavity 1 15 with circular exit slit is used for uniform feeding of an operative gas to gas discharge chamber 117, said plasma emitter of electrons 200 is allocated at the central part of the plasma source design; anode 220 is connected to power supply 2200 through electric feed through 222 which is utilized also as an inlet and an outlet of coolant, e.g., water, Freon; cathode 210 is accommodated, together with a system of vacuum arc initiation 250 and non-magnetic metallic shields 230, inside circular magnetic slit of the magnetic system 240; system of vacuum arc initiation 250 is mounted on anode 220 and consists of ignition electrode 251 and insulator 252; ignition electrode 251 is connected to power supply 2300 through current feed through 253; circular cathode 210 is connected to power supply 2200 through electrical feed through 211 , which may be used also for coolant supply to inner cavity of circular cathode 210; magnetic system 240 consists of magnetic pole 241, magnetic pole 243 and a permanent magnet 242. The cold cathode unit according to claim 14, especially useful for crystal growth, additionally comprising a masking device 3200, being installed inside the work vacuum chamber 3000. The cold cathode unit according to claim 14, adapted for ultra polishing an object, especially a gemstone. Dr Eyal Bressler, Patent Attorney 1 1 Tuval St Ramat Gan 52522^ Tel 03-5765555 1^03-57 5566