HK1035577A1 - Method of molecular-scale pattern imprinting at surfaces - Google Patents

Method of molecular-scale pattern imprinting at surfaces

Info

Publication number
HK1035577A1
HK1035577A1 HK01106019A HK01106019A HK1035577A1 HK 1035577 A1 HK1035577 A1 HK 1035577A1 HK 01106019 A HK01106019 A HK 01106019A HK 01106019 A HK01106019 A HK 01106019A HK 1035577 A1 HK1035577 A1 HK 1035577A1
Authority
HK
Hong Kong
Prior art keywords
molecular
scale pattern
pattern imprinting
imprinting
scale
Prior art date
Application number
HK01106019A
Other languages
English (en)
Inventor
John C Polanyi
Duncan Rogers
Original Assignee
John C Polanyi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by John C Polanyi filed Critical John C Polanyi
Publication of HK1035577A1 publication Critical patent/HK1035577A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
HK01106019A 1997-11-12 2001-08-27 Method of molecular-scale pattern imprinting at surfaces HK1035577A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/967,891 US6156393A (en) 1997-11-12 1997-11-12 Method of molecular-scale pattern imprinting at surfaces
PCT/CA1998/001028 WO1999024868A1 (en) 1997-11-12 1998-11-06 Method of molecular-scale pattern imprinting at surfaces

Publications (1)

Publication Number Publication Date
HK1035577A1 true HK1035577A1 (en) 2001-11-30

Family

ID=25513468

Family Applications (1)

Application Number Title Priority Date Filing Date
HK01106019A HK1035577A1 (en) 1997-11-12 2001-08-27 Method of molecular-scale pattern imprinting at surfaces

Country Status (11)

Country Link
US (1) US6156393A (zh)
EP (1) EP1029257A1 (zh)
JP (1) JP2001523039A (zh)
KR (1) KR20010032039A (zh)
CN (1) CN1244017C (zh)
AU (1) AU749149B2 (zh)
CA (1) CA2309738C (zh)
HK (1) HK1035577A1 (zh)
IL (1) IL136092A0 (zh)
NZ (1) NZ504943A (zh)
WO (1) WO1999024868A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6370304B1 (en) * 1998-09-28 2002-04-09 Corning Cable Systems Llc Radiation marking of fiber optic cable components
US7030040B2 (en) * 2002-10-31 2006-04-18 Intel Corporation Selectively growing a polymeric material on a semiconductor substrate
US6641899B1 (en) * 2002-11-05 2003-11-04 International Business Machines Corporation Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same
US6911400B2 (en) * 2002-11-05 2005-06-28 International Business Machines Corporation Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same
WO2004069735A1 (en) * 2003-02-07 2004-08-19 Nanocluster Devices Ltd. Templated cluster assembled wires
WO2004079450A1 (en) * 2003-03-06 2004-09-16 Yissum Research Development Company Of The Hebrew University Of Jerusalem Method for manufacturing a patterned structure
US7112617B2 (en) * 2003-04-22 2006-09-26 International Business Machines Corporation Patterned substrate with hydrophilic/hydrophobic contrast, and method of use
US7282241B2 (en) * 2003-04-22 2007-10-16 International Business Machines Corporation Patterned, high surface area substrate with hydrophilic/hydrophobic contrast, and method of use
KR100547015B1 (ko) * 2003-05-23 2006-01-26 주식회사 올메디쿠스 일정한 크기 이상의 분석물질을 정량 분석하기 위한바이오센서 및 그 제조방법
US8133554B2 (en) * 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
CN101027608A (zh) * 2004-09-24 2007-08-29 昭和电工株式会社 构图和膜形成方法、电致发光器件及其制造方法以及电致发光显示装置
JP4849829B2 (ja) * 2005-05-15 2012-01-11 株式会社ソニー・コンピュータエンタテインメント センタ装置
US20120112051A1 (en) * 2007-06-01 2012-05-10 Jeol Usa, Inc. Atmospheric Pressure Charge-Exchange Analyte Ionization
CA2652130A1 (en) * 2008-01-30 2009-07-30 John C. Polanyi Method of linear patterning at surfaces

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340617A (en) * 1980-05-19 1982-07-20 Massachusetts Institute Of Technology Method and apparatus for depositing a material on a surface
US4615904A (en) * 1982-06-01 1986-10-07 Massachusetts Institute Of Technology Maskless growth of patterned films
WO1983004269A1 (en) * 1982-06-01 1983-12-08 Massachusetts Institute Of Technology Maskless growth of patterned films
US4701347A (en) * 1986-04-18 1987-10-20 American Telephone And Telegraph Company, At&T Bell Laboratories Method for growing patterned metal layers
DE3725169A1 (de) * 1987-07-29 1989-02-09 Sackmann Erich Verfahren zur strukturierten einbringung von die leitfaehigkeit bestimmenden dotierstoffen in halbleiteroberflaechen
DE68927865T2 (de) * 1988-06-28 1997-07-31 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung von aus monomolekularen Schichten aufgebauten Filmen unter Anwendung von Silanen, die Acetylen- bindungen enthalten
FR2651782B1 (fr) * 1989-09-14 1993-03-19 Air Liquide Procede pour la realisation d'un depot d'un revetement protecteur inorganique et amorphe sur un substrat polymerique organique.
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
US5322988A (en) * 1990-03-29 1994-06-21 The United States Of America As Represented By The Secretary Of The Navy Laser texturing
EP0498580A1 (en) * 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Method for depositing a metal film containing aluminium by use of alkylaluminium halide
US5112434A (en) * 1991-03-20 1992-05-12 Shipley Company Inc. Method for patterning electroless metal on a substrate followed by reactive ion etching
FR2685127B1 (fr) * 1991-12-13 1994-02-04 Christian Licoppe Photonanographe a gaz pour la fabrication et l'analyse optique de motifs a l'echelle nanometrique.
DE4204650C1 (zh) * 1992-02-15 1993-07-08 Hoffmeister, Helmut, Dr., 4400 Muenster, De
US5273788A (en) * 1992-07-20 1993-12-28 The University Of Utah Preparation of diamond and diamond-like thin films
US5512328A (en) * 1992-08-07 1996-04-30 Hitachi, Ltd. Method for forming a pattern and forming a thin film used in pattern formation
EP0731490A3 (en) * 1995-03-02 1998-03-11 Ebara Corporation Ultra-fine microfabrication method using an energy beam
JP2884054B2 (ja) * 1995-11-29 1999-04-19 工業技術院長 微細加工方法
JPH09223455A (ja) * 1996-02-16 1997-08-26 Hitachi Ltd 表面構造制御法およびこれを利用した電子源および平面ディスプレィ

Also Published As

Publication number Publication date
EP1029257A1 (en) 2000-08-23
US6156393A (en) 2000-12-05
WO1999024868A1 (en) 1999-05-20
JP2001523039A (ja) 2001-11-20
AU1016499A (en) 1999-05-31
NZ504943A (en) 2002-10-25
CN1285932A (zh) 2001-02-28
CA2309738A1 (en) 1999-05-20
CN1244017C (zh) 2006-03-01
IL136092A0 (en) 2001-05-20
AU749149B2 (en) 2002-06-20
CA2309738C (en) 2010-01-26
KR20010032039A (ko) 2001-04-16

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20101106