HK1024513A1 - Field emitter fabrication using open circuit electrochemical lift off. - Google Patents

Field emitter fabrication using open circuit electrochemical lift off.

Info

Publication number
HK1024513A1
HK1024513A1 HK00103749A HK00103749A HK1024513A1 HK 1024513 A1 HK1024513 A1 HK 1024513A1 HK 00103749 A HK00103749 A HK 00103749A HK 00103749 A HK00103749 A HK 00103749A HK 1024513 A1 HK1024513 A1 HK 1024513A1
Authority
HK
Hong Kong
Prior art keywords
open circuit
field emitter
emitter fabrication
circuit electrochemical
lift
Prior art date
Application number
HK00103749A
Other languages
English (en)
Inventor
John D Porter
N Johan Knall
Gabriela S Chakarova
Christopher J Spindt
Original Assignee
Candescent Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Candescent Tech Corp filed Critical Candescent Tech Corp
Publication of HK1024513A1 publication Critical patent/HK1024513A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
HK00103749A 1997-04-30 2000-06-21 Field emitter fabrication using open circuit electrochemical lift off. HK1024513A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/848,338 US5863233A (en) 1996-03-05 1997-04-30 Field emitter fabrication using open circuit electrochemical lift off
PCT/US1998/002525 WO1998049376A1 (en) 1997-04-30 1998-02-10 Field emitter fabrication using open circuit electrochemical lift off

Publications (1)

Publication Number Publication Date
HK1024513A1 true HK1024513A1 (en) 2000-10-13

Family

ID=25303008

Family Applications (1)

Application Number Title Priority Date Filing Date
HK00103749A HK1024513A1 (en) 1997-04-30 2000-06-21 Field emitter fabrication using open circuit electrochemical lift off.

Country Status (7)

Country Link
US (1) US5863233A (ko)
EP (1) EP0998597B1 (ko)
JP (1) JP4130233B2 (ko)
KR (1) KR100393333B1 (ko)
DE (1) DE69827801T2 (ko)
HK (1) HK1024513A1 (ko)
WO (1) WO1998049376A1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6027632A (en) * 1996-03-05 2000-02-22 Candescent Technologies Corporation Multi-step removal of excess emitter material in fabricating electron-emitting device
US6120674A (en) * 1997-06-30 2000-09-19 Candescent Technologies Corporation Electrochemical removal of material in electron-emitting device
US6103095A (en) * 1998-02-27 2000-08-15 Candescent Technologies Corporation Non-hazardous wet etching method
JP2000294122A (ja) * 1999-04-08 2000-10-20 Nec Corp 電界放出型冷陰極及び平面ディスプレイの製造方法
US7148148B2 (en) * 2001-12-06 2006-12-12 Seiko Epson Corporation Mask forming and removing method, and semiconductor device, an electric circuit, a display module, a color filter and an emissive device manufactured by the same method
US6670629B1 (en) 2002-09-06 2003-12-30 Ge Medical Systems Global Technology Company, Llc Insulated gate field emitter array
US6750470B1 (en) 2002-12-12 2004-06-15 General Electric Company Robust field emitter array design
US20040113178A1 (en) * 2002-12-12 2004-06-17 Colin Wilson Fused gate field emitter
JP4741223B2 (ja) * 2003-11-28 2011-08-03 三星エスディアイ株式会社 電子放出素子
JP4175298B2 (ja) * 2004-07-07 2008-11-05 セイコーエプソン株式会社 カラーフィルタとその製造方法及び電気光学装置並びに電子機器
JP4803998B2 (ja) * 2004-12-08 2011-10-26 ソニー株式会社 電界放出型電子放出素子の製造方法
TWI437615B (zh) * 2011-06-07 2014-05-11 Au Optronics Corp 場發射顯示元件之製作方法及應用於製作場發射顯示元件之電化學系統

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5129982A (en) * 1991-03-15 1992-07-14 General Motors Corporation Selective electrochemical etching
JP2833519B2 (ja) * 1994-09-27 1998-12-09 日本電気株式会社 絶縁膜上の半導体膜の薄膜化方法および薄膜化装置
US5578900A (en) * 1995-11-01 1996-11-26 Industrial Technology Research Institute Built in ion pump for field emission display
US5766446A (en) * 1996-03-05 1998-06-16 Candescent Technologies Corporation Electrochemical removal of material, particularly excess emitter material in electron-emitting device

Also Published As

Publication number Publication date
DE69827801T2 (de) 2005-11-03
EP0998597A4 (en) 2000-05-10
US5863233A (en) 1999-01-26
JP2002511182A (ja) 2002-04-09
KR20010020373A (ko) 2001-03-15
JP4130233B2 (ja) 2008-08-06
EP0998597A1 (en) 2000-05-10
EP0998597B1 (en) 2004-11-24
DE69827801D1 (de) 2004-12-30
KR100393333B1 (ko) 2003-08-02
WO1998049376A1 (en) 1998-11-05

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20110210