HK1020292A1 - A method and device for temperature dependent current generation - Google Patents

A method and device for temperature dependent current generation

Info

Publication number
HK1020292A1
HK1020292A1 HK99105421A HK99105421A HK1020292A1 HK 1020292 A1 HK1020292 A1 HK 1020292A1 HK 99105421 A HK99105421 A HK 99105421A HK 99105421 A HK99105421 A HK 99105421A HK 1020292 A1 HK1020292 A1 HK 1020292A1
Authority
HK
Hong Kong
Prior art keywords
current generation
temperature dependent
dependent current
temperature
generation
Prior art date
Application number
HK99105421A
Other languages
English (en)
Inventor
Nianxiong Tan
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of HK1020292A1 publication Critical patent/HK1020292A1/xx

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
  • Semiconductor Lasers (AREA)
  • Control Of Eletrric Generators (AREA)
HK99105421A 1996-05-07 1999-11-23 A method and device for temperature dependent current generation HK1020292A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9601748A SE515345C2 (sv) 1996-05-07 1996-05-07 Temperaturberoende strömalstring
PCT/SE1997/000725 WO1997042556A1 (fr) 1996-05-07 1997-04-29 Generateur electrique thermodependant et procede correspondant

Publications (1)

Publication Number Publication Date
HK1020292A1 true HK1020292A1 (en) 2000-04-07

Family

ID=20402493

Family Applications (1)

Application Number Title Priority Date Filing Date
HK99105421A HK1020292A1 (en) 1996-05-07 1999-11-23 A method and device for temperature dependent current generation

Country Status (13)

Country Link
US (1) US5942888A (fr)
EP (1) EP0900419B1 (fr)
JP (1) JP3828938B2 (fr)
KR (1) KR100446088B1 (fr)
CN (1) CN1113282C (fr)
AU (1) AU2797297A (fr)
CA (1) CA2253508C (fr)
DE (1) DE69706671T2 (fr)
ES (1) ES2163153T3 (fr)
HK (1) HK1020292A1 (fr)
SE (1) SE515345C2 (fr)
TW (1) TW342546B (fr)
WO (1) WO1997042556A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10332494A (ja) * 1997-06-03 1998-12-18 Oki Data:Kk 温度検出回路、駆動装置及びプリンタ
US6326836B1 (en) * 1999-09-29 2001-12-04 Agilent Technologies, Inc. Isolated reference bias generator with reduced error due to parasitics
JP3638530B2 (ja) 2001-02-13 2005-04-13 Ｎｅｃエレクトロニクス株式会社 基準電流回路及び基準電圧回路
JP3751966B2 (ja) * 2003-11-21 2006-03-08 日本テキサス・インスツルメンツ株式会社 サーマルシャットダウン回路
US7119527B2 (en) * 2004-06-30 2006-10-10 Silicon Labs Cp, Inc. Voltage reference circuit using PTAT voltage
KR100771884B1 (ko) * 2006-09-11 2007-11-01 삼성전자주식회사 온도 변화에 따른 비선형 특성을 제거할 수 있는 온도 센싱회로
US20080164567A1 (en) * 2007-01-09 2008-07-10 Motorola, Inc. Band gap reference supply using nanotubes
JP4340308B2 (ja) * 2007-08-21 2009-10-07 株式会社沖データ 基準電圧回路、駆動回路、プリントヘッドおよび画像形成装置
WO2009153618A1 (fr) * 2008-06-18 2009-12-23 Freescale Semiconductor, Inc. Circuit de compensation de température et procédé de génération d’une tension de référence à comportement en température bien défini
US7951678B2 (en) * 2008-08-12 2011-05-31 International Business Machines Corporation Metal-gate high-k reference structure

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4473793A (en) * 1981-03-26 1984-09-25 Dbx, Inc. Bias generator
US4645948A (en) * 1984-10-01 1987-02-24 At&T Bell Laboratories Field effect transistor current source
US5068595A (en) * 1990-09-20 1991-11-26 Delco Electronics Corporation Adjustable temperature dependent current generator
IT1245237B (it) * 1991-03-18 1994-09-13 Sgs Thomson Microelectronics Generatore di tensione di riferimento variabile con la temperatura con deriva termica prestabilita e funzione lineare della tensione di alimentazione
EP0504983A1 (fr) * 1991-03-20 1992-09-23 Koninklijke Philips Electronics N.V. Circuit de référence conçu pour fournir un courant de référence présentant un coefficient de température déterminé
US5334929A (en) * 1992-08-26 1994-08-02 Harris Corporation Circuit for providing a current proportional to absolute temperature
US5391980A (en) * 1993-06-16 1995-02-21 Texas Instruments Incorporated Second order low temperature coefficient bandgap voltage supply
DE69516767T2 (de) * 1994-02-14 2000-11-23 Koninklijke Philips Electronics N.V., Eindhoven Referenzschaltung mit kontrollierter temperaturabhängigkeit
US5627456A (en) * 1995-06-07 1997-05-06 International Business Machines Corporation All FET fully integrated current reference circuit
JP3780030B2 (ja) * 1995-06-12 2006-05-31 株式会社ルネサステクノロジ 発振回路およびｄｒａｍ

Also Published As

Publication number Publication date
TW342546B (en) 1998-10-11
SE9601748L (sv) 1997-11-08
JP3828938B2 (ja) 2006-10-04
DE69706671T2 (de) 2002-06-20
JP2000509856A (ja) 2000-08-02
AU2797297A (en) 1997-11-26
EP0900419B1 (fr) 2001-09-12
US5942888A (en) 1999-08-24
KR100446088B1 (ko) 2004-12-08
SE9601748D0 (sv) 1996-05-07
SE515345C2 (sv) 2001-07-16
DE69706671D1 (de) 2001-10-18
KR20000010718A (ko) 2000-02-25
EP0900419A1 (fr) 1999-03-10
CN1113282C (zh) 2003-07-02
CA2253508A1 (fr) 1997-11-13
CA2253508C (fr) 2005-10-18
CN1218560A (zh) 1999-06-02
ES2163153T3 (es) 2002-01-16
WO1997042556A1 (fr) 1997-11-13

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20070429