GB998939A - Improvements in and relating to semiconductor devices - Google Patents

Improvements in and relating to semiconductor devices

Info

Publication number
GB998939A
GB998939A GB37356/60D GB3735660D GB998939A GB 998939 A GB998939 A GB 998939A GB 37356/60 D GB37356/60 D GB 37356/60D GB 3735660 D GB3735660 D GB 3735660D GB 998939 A GB998939 A GB 998939A
Authority
GB
United Kingdom
Prior art keywords
boron
copper
tin
zone
alloyed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB37356/60D
Other languages
English (en)
Inventor
Alan Hugh Berger Benny
Albert Trainor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mullard Ltd filed Critical Mullard Ltd
Publication of GB998939A publication Critical patent/GB998939A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10P95/50—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Die Bonding (AREA)
GB37356/60D 1960-11-01 1960-11-01 Improvements in and relating to semiconductor devices Expired GB998939A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3751360 1960-11-01

Publications (1)

Publication Number Publication Date
GB998939A true GB998939A (en) 1965-07-21

Family

ID=10397033

Family Applications (1)

Application Number Title Priority Date Filing Date
GB37356/60D Expired GB998939A (en) 1960-11-01 1960-11-01 Improvements in and relating to semiconductor devices

Country Status (6)

Country Link
US (1) US3181981A (cg-RX-API-DMAC10.html)
CH (1) CH417774A (cg-RX-API-DMAC10.html)
DE (1) DE1166936B (cg-RX-API-DMAC10.html)
ES (1) ES271622A1 (cg-RX-API-DMAC10.html)
GB (1) GB998939A (cg-RX-API-DMAC10.html)
NL (1) NL270684A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104439282A (zh) * 2014-12-15 2015-03-25 湖南师范大学 一种针状纳米Cu-Sn-B合金及制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4448852A (en) * 1982-09-20 1984-05-15 Allied Corporation Homogeneous low melting point copper based alloys
US4485153A (en) * 1982-12-15 1984-11-27 Uop Inc. Conductive pigment-coated surfaces

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL178757B (nl) * 1952-06-02 British Steel Corp Werkwijze en inrichting voor het continu produceren van een metaalstrook uit metaalpoeder.
US2765245A (en) * 1952-08-22 1956-10-02 Gen Electric Method of making p-n junction semiconductor units
BE532794A (cg-RX-API-DMAC10.html) * 1953-10-26
DE1036393B (de) * 1954-08-05 1958-08-14 Siemens Ag Verfahren zur Herstellung von zwei p-n-UEbergaengen in Halbleiterkoerpern, z. B. Flaechentransistoren
DE1058632B (de) * 1955-12-03 1959-06-04 Deutsche Bundespost Verfahren zur beliebigen Verringerung des Sperrwiderstandes einer Legierungs-elektrode von Halbleiteranordnungen
DE1067936B (cg-RX-API-DMAC10.html) * 1958-02-04 1959-10-29
US2964397A (en) * 1958-07-28 1960-12-13 Walter M Weil Copper-boron alloys
US2986481A (en) * 1958-08-04 1961-05-30 Hughes Aircraft Co Method of making semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104439282A (zh) * 2014-12-15 2015-03-25 湖南师范大学 一种针状纳米Cu-Sn-B合金及制备方法

Also Published As

Publication number Publication date
CH417774A (de) 1966-07-31
ES271622A1 (es) 1962-03-16
DE1166936B (de) 1964-04-02
US3181981A (en) 1965-05-04
NL270684A (cg-RX-API-DMAC10.html)

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