GB806251A - Improvements in or relating to the manufacture of semi-conductor devices - Google Patents
Improvements in or relating to the manufacture of semi-conductor devicesInfo
- Publication number
- GB806251A GB806251A GB1949156A GB1949156A GB806251A GB 806251 A GB806251 A GB 806251A GB 1949156 A GB1949156 A GB 1949156A GB 1949156 A GB1949156 A GB 1949156A GB 806251 A GB806251 A GB 806251A
- Authority
- GB
- United Kingdom
- Prior art keywords
- alloying
- semi
- contact
- conductor
- passing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
806,251. Semi-conductor devices. GENERAL ELECTRIC CO. Ltd. May 30, 1957 [June 22, 1956, No. 19491/56. Class 37. In a method of alloying a significant impurity containing material to a semi-conductor body, the alloying is initiated by first heating the body and material in contact to a temperature above the eutectic point of the material and semi-conductor material but insufficient to cause alloying, and then passing a pulse of electric current between the material and the body to cause local melting at the contact area. A PN junction rectifier is made by the steps of electroplating an ohmic contact on one face of a wafer of P-type silicon, placing the wafer in a furnace with its other face in contact with the end of a gold wire doped with 1 per cent of antimony and with lead wires touching the gold wire and plated electrode respectively, heating the assembly to 360 ‹ C. while passing dry argon through the furnace, passing a' current pulse between the lead wires to initiate alloying by local melting, raising the temperature to establish a suitable degree of alloy penetration, and finally cooling to room temperature to form a recrystallized N-type region overlain by a gold contact. After etching, washing and drying the device is encapsulated in a hermetically sealed container. In an alternative method, especially useful where two alloy contacts of different materials are to be made to a single semi-conductor body the molten material formed by the current pulse is immediately resolidified and the alloying completed at a later stage by remelting.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1949156A GB806251A (en) | 1956-06-22 | 1956-06-22 | Improvements in or relating to the manufacture of semi-conductor devices |
| FR1176073D FR1176073A (en) | 1956-06-22 | 1957-06-17 | Semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1949156A GB806251A (en) | 1956-06-22 | 1956-06-22 | Improvements in or relating to the manufacture of semi-conductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB806251A true GB806251A (en) | 1958-12-23 |
Family
ID=10130244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1949156A Expired GB806251A (en) | 1956-06-22 | 1956-06-22 | Improvements in or relating to the manufacture of semi-conductor devices |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1176073A (en) |
| GB (1) | GB806251A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110148581A (en) * | 2018-02-10 | 2019-08-20 | 姜富帅 | A kind of metal-semiconductor metallization process and method |
-
1956
- 1956-06-22 GB GB1949156A patent/GB806251A/en not_active Expired
-
1957
- 1957-06-17 FR FR1176073D patent/FR1176073A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110148581A (en) * | 2018-02-10 | 2019-08-20 | 姜富帅 | A kind of metal-semiconductor metallization process and method |
| CN110148581B (en) * | 2018-02-10 | 2022-05-17 | 姜富帅 | Metallization process and method of metal-semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1176073A (en) | 1959-04-03 |
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