GB998388A - Improvements in or relating to semiconductor junction devices - Google Patents

Improvements in or relating to semiconductor junction devices

Info

Publication number
GB998388A
GB998388A GB25145/62A GB2514562A GB998388A GB 998388 A GB998388 A GB 998388A GB 25145/62 A GB25145/62 A GB 25145/62A GB 2514562 A GB2514562 A GB 2514562A GB 998388 A GB998388 A GB 998388A
Authority
GB
United Kingdom
Prior art keywords
junction
layer
oxide
june
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB25145/62A
Other languages
English (en)
Inventor
John Magner Allen
Maurice William White
Roy Errol Martin
Derek Herbert Garratt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to IT699934D priority Critical patent/IT699934A/it
Priority to NL294593D priority patent/NL294593A/xx
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB25145/62A priority patent/GB998388A/en
Priority to DEP32074A priority patent/DE1258518B/de
Priority to FR939697A priority patent/FR1361215A/fr
Publication of GB998388A publication Critical patent/GB998388A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
GB25145/62A 1962-06-29 1962-06-29 Improvements in or relating to semiconductor junction devices Expired GB998388A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT699934D IT699934A (pt) 1962-06-29
NL294593D NL294593A (pt) 1962-06-29
GB25145/62A GB998388A (en) 1962-06-29 1962-06-29 Improvements in or relating to semiconductor junction devices
DEP32074A DE1258518B (de) 1962-06-29 1963-06-26 Verfahren zum Herstellen eines Halbleiterelements mit einer gelochten Isolierschicht ueber einer eingelassenen Zone
FR939697A FR1361215A (fr) 1962-06-29 1963-06-28 Dispositif semi-conducteur à jonction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB25145/62A GB998388A (en) 1962-06-29 1962-06-29 Improvements in or relating to semiconductor junction devices

Publications (1)

Publication Number Publication Date
GB998388A true GB998388A (en) 1965-07-14

Family

ID=10222955

Family Applications (1)

Application Number Title Priority Date Filing Date
GB25145/62A Expired GB998388A (en) 1962-06-29 1962-06-29 Improvements in or relating to semiconductor junction devices

Country Status (5)

Country Link
DE (1) DE1258518B (pt)
FR (1) FR1361215A (pt)
GB (1) GB998388A (pt)
IT (1) IT699934A (pt)
NL (1) NL294593A (pt)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3363152A (en) * 1964-01-24 1968-01-09 Westinghouse Electric Corp Semiconductor devices with low leakage current across junction
US3405329A (en) * 1964-04-16 1968-10-08 Northern Electric Co Semiconductor devices
US3413527A (en) * 1964-10-02 1968-11-26 Gen Electric Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device
US3463977A (en) * 1966-04-21 1969-08-26 Fairchild Camera Instr Co Optimized double-ring semiconductor device
US3508123A (en) * 1966-07-13 1970-04-21 Gen Instrument Corp Oxide-type varactor with increased capacitance range
US3600648A (en) * 1965-04-21 1971-08-17 Sylvania Electric Prod Semiconductor electrical translating device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3302076A (en) * 1963-06-06 1967-01-31 Motorola Inc Semiconductor device with passivated junction
US3304469A (en) * 1964-03-03 1967-02-14 Rca Corp Field effect solid state device having a partially insulated electrode
US3446995A (en) * 1964-05-27 1969-05-27 Ibm Semiconductor circuits,devices and methods of improving electrical characteristics of latter
CA956038A (en) * 1964-08-20 1974-10-08 Roy W. Stiegler (Jr.) Semiconductor devices with field electrodes
US3319135A (en) * 1964-09-03 1967-05-09 Texas Instruments Inc Low capacitance planar diode
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
US3423606A (en) * 1966-07-21 1969-01-21 Gen Instrument Corp Diode with sharp reverse-bias breakdown characteristic

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE503668A (pt) * 1950-06-09
BE555335A (pt) * 1956-02-28
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3363152A (en) * 1964-01-24 1968-01-09 Westinghouse Electric Corp Semiconductor devices with low leakage current across junction
US3405329A (en) * 1964-04-16 1968-10-08 Northern Electric Co Semiconductor devices
US3413527A (en) * 1964-10-02 1968-11-26 Gen Electric Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device
US3600648A (en) * 1965-04-21 1971-08-17 Sylvania Electric Prod Semiconductor electrical translating device
US3463977A (en) * 1966-04-21 1969-08-26 Fairchild Camera Instr Co Optimized double-ring semiconductor device
US3508123A (en) * 1966-07-13 1970-04-21 Gen Instrument Corp Oxide-type varactor with increased capacitance range

Also Published As

Publication number Publication date
IT699934A (pt)
DE1258518B (de) 1968-01-11
FR1361215A (fr) 1964-05-15
NL294593A (pt)

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