FR1361215A - Dispositif semi-conducteur à jonction - Google Patents
Dispositif semi-conducteur à jonctionInfo
- Publication number
- FR1361215A FR1361215A FR939697A FR939697A FR1361215A FR 1361215 A FR1361215 A FR 1361215A FR 939697 A FR939697 A FR 939697A FR 939697 A FR939697 A FR 939697A FR 1361215 A FR1361215 A FR 1361215A
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- junction semiconductor
- junction
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB25145/62A GB998388A (en) | 1962-06-29 | 1962-06-29 | Improvements in or relating to semiconductor junction devices |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1361215A true FR1361215A (fr) | 1964-05-15 |
Family
ID=10222955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR939697A Expired FR1361215A (fr) | 1962-06-29 | 1963-06-28 | Dispositif semi-conducteur à jonction |
Country Status (5)
Country | Link |
---|---|
DE (1) | DE1258518B (pt) |
FR (1) | FR1361215A (pt) |
GB (1) | GB998388A (pt) |
IT (1) | IT699934A (pt) |
NL (1) | NL294593A (pt) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3302076A (en) * | 1963-06-06 | 1967-01-31 | Motorola Inc | Semiconductor device with passivated junction |
US3304469A (en) * | 1964-03-03 | 1967-02-14 | Rca Corp | Field effect solid state device having a partially insulated electrode |
US3319135A (en) * | 1964-09-03 | 1967-05-09 | Texas Instruments Inc | Low capacitance planar diode |
US3363152A (en) * | 1964-01-24 | 1968-01-09 | Westinghouse Electric Corp | Semiconductor devices with low leakage current across junction |
US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
US3413527A (en) * | 1964-10-02 | 1968-11-26 | Gen Electric | Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device |
US3423606A (en) * | 1966-07-21 | 1969-01-21 | Gen Instrument Corp | Diode with sharp reverse-bias breakdown characteristic |
US3446995A (en) * | 1964-05-27 | 1969-05-27 | Ibm | Semiconductor circuits,devices and methods of improving electrical characteristics of latter |
US3491273A (en) * | 1964-08-20 | 1970-01-20 | Texas Instruments Inc | Semiconductor devices having field relief electrode |
US3508123A (en) * | 1966-07-13 | 1970-04-21 | Gen Instrument Corp | Oxide-type varactor with increased capacitance range |
US3600648A (en) * | 1965-04-21 | 1971-08-17 | Sylvania Electric Prod | Semiconductor electrical translating device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA941074A (en) * | 1964-04-16 | 1974-01-29 | Northern Electric Company Limited | Semiconductor devices with field electrodes |
US3463977A (en) * | 1966-04-21 | 1969-08-26 | Fairchild Camera Instr Co | Optimized double-ring semiconductor device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE503668A (pt) * | 1950-06-09 | |||
BE555335A (pt) * | 1956-02-28 | |||
US2981877A (en) * | 1959-07-30 | 1961-04-25 | Fairchild Semiconductor | Semiconductor device-and-lead structure |
-
0
- IT IT699934D patent/IT699934A/it unknown
- NL NL294593D patent/NL294593A/xx unknown
-
1962
- 1962-06-29 GB GB25145/62A patent/GB998388A/en not_active Expired
-
1963
- 1963-06-26 DE DEP32074A patent/DE1258518B/de active Pending
- 1963-06-28 FR FR939697A patent/FR1361215A/fr not_active Expired
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3302076A (en) * | 1963-06-06 | 1967-01-31 | Motorola Inc | Semiconductor device with passivated junction |
US3363152A (en) * | 1964-01-24 | 1968-01-09 | Westinghouse Electric Corp | Semiconductor devices with low leakage current across junction |
US3304469A (en) * | 1964-03-03 | 1967-02-14 | Rca Corp | Field effect solid state device having a partially insulated electrode |
US3446995A (en) * | 1964-05-27 | 1969-05-27 | Ibm | Semiconductor circuits,devices and methods of improving electrical characteristics of latter |
US3491273A (en) * | 1964-08-20 | 1970-01-20 | Texas Instruments Inc | Semiconductor devices having field relief electrode |
US3319135A (en) * | 1964-09-03 | 1967-05-09 | Texas Instruments Inc | Low capacitance planar diode |
US3413527A (en) * | 1964-10-02 | 1968-11-26 | Gen Electric | Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device |
US3600648A (en) * | 1965-04-21 | 1971-08-17 | Sylvania Electric Prod | Semiconductor electrical translating device |
US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
US3508123A (en) * | 1966-07-13 | 1970-04-21 | Gen Instrument Corp | Oxide-type varactor with increased capacitance range |
US3423606A (en) * | 1966-07-21 | 1969-01-21 | Gen Instrument Corp | Diode with sharp reverse-bias breakdown characteristic |
Also Published As
Publication number | Publication date |
---|---|
IT699934A (pt) | |
DE1258518B (de) | 1968-01-11 |
GB998388A (en) | 1965-07-14 |
NL294593A (pt) |
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