GB995527A - Alloy-diffused transistor - Google Patents

Alloy-diffused transistor

Info

Publication number
GB995527A
GB995527A GB10546/64A GB1054664A GB995527A GB 995527 A GB995527 A GB 995527A GB 10546/64 A GB10546/64 A GB 10546/64A GB 1054664 A GB1054664 A GB 1054664A GB 995527 A GB995527 A GB 995527A
Authority
GB
United Kingdom
Prior art keywords
alloyed
layer
region
antimony
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB10546/64A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of GB995527A publication Critical patent/GB995527A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/035Diffusion through a layer

Landscapes

  • Bipolar Transistors (AREA)
GB10546/64A 1963-03-22 1964-03-12 Alloy-diffused transistor Expired GB995527A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US267220A US3309244A (en) 1963-03-22 1963-03-22 Alloy-diffused method for producing semiconductor devices

Publications (1)

Publication Number Publication Date
GB995527A true GB995527A (en) 1965-06-16

Family

ID=23017838

Family Applications (1)

Application Number Title Priority Date Filing Date
GB10546/64A Expired GB995527A (en) 1963-03-22 1964-03-12 Alloy-diffused transistor

Country Status (9)

Country Link
US (1) US3309244A (enExample)
JP (1) JPS4911033B1 (enExample)
BE (1) BE645252A (enExample)
DE (1) DE1935088U (enExample)
DK (1) DK117363B (enExample)
FR (1) FR1397401A (enExample)
GB (1) GB995527A (enExample)
NL (1) NL6402683A (enExample)
NO (1) NO116431B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577045A (en) * 1968-09-18 1971-05-04 Gen Electric High emitter efficiency simiconductor device with low base resistance and by selective diffusion of base impurities
US3905844A (en) * 1971-06-15 1975-09-16 Matsushita Electric Industrial Co Ltd Method of making a PN junction device by metal dot alloying and recrystallization

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
US2943006A (en) * 1957-05-06 1960-06-28 Westinghouse Electric Corp Diffused transistors and processes for making the same
NL257150A (enExample) * 1960-10-22 1900-01-01
US3211594A (en) * 1961-12-19 1965-10-12 Hughes Aircraft Co Semiconductor device manufacture

Also Published As

Publication number Publication date
FR1397401A (fr) 1965-04-30
DE1935088U (de) 1966-03-24
DK117363B (da) 1970-04-20
NO116431B (enExample) 1969-03-24
US3309244A (en) 1967-03-14
BE645252A (enExample) 1964-07-16
JPS4911033B1 (enExample) 1974-03-14
NL6402683A (enExample) 1964-09-23

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