GB993533A - Improvements in or relating to the growth of single crystals of synthetic garnet - Google Patents
Improvements in or relating to the growth of single crystals of synthetic garnetInfo
- Publication number
- GB993533A GB993533A GB1412/62A GB141262A GB993533A GB 993533 A GB993533 A GB 993533A GB 1412/62 A GB1412/62 A GB 1412/62A GB 141262 A GB141262 A GB 141262A GB 993533 A GB993533 A GB 993533A
- Authority
- GB
- United Kingdom
- Prior art keywords
- relating
- growth
- yttrium
- rare earth
- single crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title abstract 2
- 239000002223 garnet Substances 0.000 title abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 2
- 229910052761 rare earth metal Chemical group 0.000 abstract 2
- 150000002910 rare earth metals Chemical group 0.000 abstract 2
- 229910052727 yttrium Inorganic materials 0.000 abstract 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- ZYIAGBKPNDRMJB-UHFFFAOYSA-N [O-2].[Ba+2].[B+]=O Chemical compound [O-2].[Ba+2].[B+]=O ZYIAGBKPNDRMJB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052810 boron oxide Inorganic materials 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract 1
- 230000004907 flux Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052706 scandium Inorganic materials 0.000 abstract 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/12—Salt solvents, e.g. flux growth
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
- C04B35/2608—Compositions containing one or more ferrites of the group comprising manganese, zinc, nickel, copper or cobalt and one or more ferrites of the group comprising rare earth metals, alkali metals, alkaline earth metals or lead
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Single garnet crystals of formula M3Me5O12 or M3Me2(MeO4)3 (where M is yttrium or a rare earth metal of atomic number 62-71, or a mixture of these rare earth metals with each other or with yttrium, and Me is a trivalent metal) are produced by heating the oxides of the metals together in a barium oxide-boron oxide flux and cooling slowly. The weight ratio barium oxide/boron oxide must be in the range 3.16/1 to 4.55/1, preferably 3.54/1, and the melt is preferably heated within the range 1255-990 DEG C., and allowed to cool as slowly as possible, preferably 1/2 DEG C. per hour. Trivalent metals include iron, which may be mixed with gallium, scandium, chromium, and cobalt.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US103366A US3117934A (en) | 1961-04-17 | 1961-04-17 | Garnet growth from barium oxide-boron oxide flux |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB993533A true GB993533A (en) | 1965-05-26 |
Family
ID=22294812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1412/62A Expired GB993533A (en) | 1961-04-17 | 1962-04-12 | Improvements in or relating to the growth of single crystals of synthetic garnet |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3117934A (en) |
| BE (1) | BE611557A (en) |
| GB (1) | GB993533A (en) |
| SE (1) | SE211086C1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3384449A (en) * | 1965-07-07 | 1968-05-21 | Army Usa | Method of growing single crystals of ba2 zn2 fe12 o22 |
| US3386799A (en) * | 1965-11-16 | 1968-06-04 | Bell Telephone Labor Inc | Growth of yttrium iron garnet |
| NL6904352A (en) * | 1969-03-20 | 1970-09-22 | ||
| US3630667A (en) * | 1969-04-01 | 1971-12-28 | Stackpole Carbon Co | Production of barium ferrite |
| JPS5820890B2 (en) * | 1974-03-01 | 1983-04-26 | サカイカガクコウギヨウ カブシキガイシヤ | Manufacturing method of ferrite particles |
| US4199396A (en) * | 1976-06-24 | 1980-04-22 | Union Carbide Corporation | Method for producing single crystal gadolinium gallium garnet |
| CN114182339A (en) * | 2021-10-29 | 2022-03-15 | 中国科学院福建物质结构研究所 | Method for growing rare earth doped yttrium iron garnet single crystal material |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2957827A (en) * | 1957-04-30 | 1960-10-25 | Bell Telephone Labor Inc | Method of making single crystal garnets |
-
1961
- 1961-04-17 US US103366A patent/US3117934A/en not_active Expired - Lifetime
- 1961-12-14 BE BE611557A patent/BE611557A/en unknown
-
1962
- 1962-04-12 GB GB1412/62A patent/GB993533A/en not_active Expired
- 1962-04-17 SE SE428962A patent/SE211086C1/sv unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE611557A (en) | 1962-03-30 |
| US3117934A (en) | 1964-01-14 |
| SE211086C1 (en) | 1967-02-21 |
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