GB993261A - Improvements in or relating to physico-chemical processes performed on semiconductormaterials or devices - Google Patents
Improvements in or relating to physico-chemical processes performed on semiconductormaterials or devicesInfo
- Publication number
- GB993261A GB993261A GB1211062A GB1211062A GB993261A GB 993261 A GB993261 A GB 993261A GB 1211062 A GB1211062 A GB 1211062A GB 1211062 A GB1211062 A GB 1211062A GB 993261 A GB993261 A GB 993261A
- Authority
- GB
- United Kingdom
- Prior art keywords
- jacket
- quartz
- solvent
- furnace
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
993,261. Semi-conductor treatment. COMPAGNIE FRANCAISE THOMSON-HOUSTON. March 29, 1962, [March 29, 1961,] No. 12110/62. Drawings to Specification. Heading H1K. In manufacturing semi-conductor devices which are treated in a sealed quartz jacket taken to a high temperature, the outer surface of the jacket is covered, either wholly or in its hottest zones, by a layer of liquid at the operational temperature produced by the action of a solvent on the quartz of the jacket. Such a solvent may be, for example, a mixture of sodium silicate and one or more oxides of bivalent metals such as lead, magnesium, and barium; boric acid optionally containing borosilicate glass; or sodium oxide. The liquid/solid system of the jacket surface acts as a barrier to vaporized impurities (such as iron, copper, and nickel) produced in the furnace and to which untreated quartz is permeable at high temperatures. An automatic method of applying the solvent consists of surrounding the jacket with a muffle made from a refractory material such as alumina containing a small proportion of solvent which is volatile at the temperature of the furnace, for example sodium oxide. In the embodiment described with reference to Fig. 1 (not shown) silicon wafers are to be in diffused with gallium. The process takes place in a silica glass (clear quartz) jacket completely coated with a sodium silicate (lead oxide mixture initially applied as a suspension of the oxide in an aqueous solution of the silicate. The jacket is placed within an opaque quartz muffle lying along the axis of a furnace, the two regions of which may be kept at different temperatures so the temperature of the gallium source may be different from that of the silicone wafers. A similar liquid-coated quartz tube may be used for the purification of gallium arsenide.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR857148A FR1293554A (en) | 1961-03-29 | 1961-03-29 | Manufacturing process of raw or finished semiconductor products |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB993261A true GB993261A (en) | 1965-05-26 |
Family
ID=8751946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1211062A Expired GB993261A (en) | 1961-03-29 | 1962-03-29 | Improvements in or relating to physico-chemical processes performed on semiconductormaterials or devices |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1293554A (en) |
| GB (1) | GB993261A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW224537B (en) * | 1992-12-21 | 1994-06-01 | Gen Electric | Fused quartz diffusion tubes for semiconductor manufacture |
-
1961
- 1961-03-29 FR FR857148A patent/FR1293554A/en not_active Expired
-
1962
- 1962-03-29 GB GB1211062A patent/GB993261A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1293554A (en) | 1962-05-18 |
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