GB993251A - Improvements in and relating to methods of manufacturing semiconductor devices - Google Patents

Improvements in and relating to methods of manufacturing semiconductor devices

Info

Publication number
GB993251A
GB993251A GB1223/62A GB122362A GB993251A GB 993251 A GB993251 A GB 993251A GB 1223/62 A GB1223/62 A GB 1223/62A GB 122362 A GB122362 A GB 122362A GB 993251 A GB993251 A GB 993251A
Authority
GB
United Kingdom
Prior art keywords
wafer
germanium
diffusion
projection
bismuth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1223/62A
Other languages
English (en)
Inventor
Julian Robert Anthony Beale
Andrew Francis Beer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE627004D priority Critical patent/BE627004A/xx
Priority to NL287617D priority patent/NL287617A/xx
Application filed by Mullard Ltd filed Critical Mullard Ltd
Priority to GB1223/62A priority patent/GB993251A/en
Priority to FR921026A priority patent/FR1343354A/fr
Priority to CH26763A priority patent/CH441241A/de
Priority to ES284071A priority patent/ES284071A1/es
Priority to DK13263AA priority patent/DK119933B/da
Priority to SE325/63A priority patent/SE302014B/xx
Priority to DEN22597A priority patent/DE1221362B/de
Publication of GB993251A publication Critical patent/GB993251A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB1223/62A 1962-01-12 1962-01-12 Improvements in and relating to methods of manufacturing semiconductor devices Expired GB993251A (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
BE627004D BE627004A (https=) 1962-01-12
NL287617D NL287617A (https=) 1962-01-12
GB1223/62A GB993251A (en) 1962-01-12 1962-01-12 Improvements in and relating to methods of manufacturing semiconductor devices
FR921026A FR1343354A (fr) 1962-01-12 1963-01-10 Dispositif à semi-conducteur et son procédé de fabrication
CH26763A CH441241A (de) 1962-01-12 1963-01-10 Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung
ES284071A ES284071A1 (es) 1962-01-12 1963-01-11 Un método de fabricar un dispositivo semiconductor
DK13263AA DK119933B (da) 1962-01-12 1963-01-11 Fremgangsmåde til fremstilling af halvlederkomponenter.
SE325/63A SE302014B (https=) 1962-01-12 1963-01-11
DEN22597A DE1221362B (de) 1962-01-12 1963-01-12 Verfahren zum Herstellen einer Halbleiteranordnung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1223/62A GB993251A (en) 1962-01-12 1962-01-12 Improvements in and relating to methods of manufacturing semiconductor devices

Publications (1)

Publication Number Publication Date
GB993251A true GB993251A (en) 1965-05-26

Family

ID=9718260

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1223/62A Expired GB993251A (en) 1962-01-12 1962-01-12 Improvements in and relating to methods of manufacturing semiconductor devices

Country Status (8)

Country Link
BE (1) BE627004A (https=)
CH (1) CH441241A (https=)
DE (1) DE1221362B (https=)
DK (1) DK119933B (https=)
ES (1) ES284071A1 (https=)
GB (1) GB993251A (https=)
NL (1) NL287617A (https=)
SE (1) SE302014B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117259949B (zh) * 2023-11-17 2024-02-06 中国航发沈阳黎明航空发动机有限责任公司 一种镍基高温合金低温瞬时液相扩散连接方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1040697B (de) * 1955-03-30 1958-10-09 Siemens Ag Verfahren zur Dotierung von Halbleiterkoerpern
NL199100A (https=) * 1955-07-21
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
AT204604B (de) * 1956-08-10 1959-08-10 Philips Nv Verfahren zur Herstellung eines halbleitenden Speerschichtsystems sowie halbleitendes Sperrschichtsystem
BE574814A (https=) * 1958-01-16
NL230316A (https=) * 1958-08-07

Also Published As

Publication number Publication date
CH441241A (de) 1967-08-15
SE302014B (https=) 1968-07-01
DK119933B (da) 1971-03-15
NL287617A (https=)
BE627004A (https=)
ES284071A1 (es) 1963-05-16
DE1221362B (de) 1966-07-21

Similar Documents

Publication Publication Date Title
US2894862A (en) Method of fabricating p-n type junction devices
US3088856A (en) Fused junction semiconductor devices
GB967263A (en) A process for use in the production of a semi-conductor device
GB807959A (en) Fused junction semiconductor devices
US2944321A (en) Method of fabricating semiconductor devices
GB833971A (en) Improvements in silicon carbide semiconductor devices and method of preparation thereof
US3009840A (en) Method of producing a semiconductor device of the junction type
GB1511012A (en) Semiconductor devices
US2967344A (en) Semiconductor devices
US2857296A (en) Methods of forming a junction in a semiconductor
GB1092727A (en) The production of a semi-conductor thyratron of the pnpn-type
US3069297A (en) Semi-conductor devices
GB993251A (en) Improvements in and relating to methods of manufacturing semiconductor devices
GB917646A (en) Method of making a semi-conductor signal-translating device
GB1198884A (en) Silicon Semiconductor with Metal-Silicide Heterojunction
US2964431A (en) Jig alloying of semiconductor devices
US2761800A (en) Method of forming p-n junctions in n-type germanium
US3235419A (en) Method of manufacturing semiconductor devices
US2992947A (en) Method and device for making an electrode exhibiting rectifier action by alloying aluminum thereto
US2878148A (en) Method of manufacturing semiconductive devices
US2830239A (en) Semiconductive alloys of gallium arsenide
US3068383A (en) Electric semiconductor device
US2813817A (en) Semiconductor devices and their manufacture
US2836520A (en) Method of making junction transistors
US3324361A (en) Semiconductor contact alloy