GB985371A - Improvements in or relating to processes for the production of monocrystalline layers of semiconductor materials - Google Patents

Improvements in or relating to processes for the production of monocrystalline layers of semiconductor materials

Info

Publication number
GB985371A
GB985371A GB38913/63A GB3891363A GB985371A GB 985371 A GB985371 A GB 985371A GB 38913/63 A GB38913/63 A GB 38913/63A GB 3891363 A GB3891363 A GB 3891363A GB 985371 A GB985371 A GB 985371A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor material
partition
heating
heating chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB38913/63A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB985371A publication Critical patent/GB985371A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/12Substrate holders or susceptors
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/08Reaction chambers; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
GB38913/63A 1962-10-05 1963-10-03 Improvements in or relating to processes for the production of monocrystalline layers of semiconductor materials Expired GB985371A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES81907A DE1216851B (de) 1962-10-05 1962-10-05 Vorrichtung und Verfahren zum Betrieb der Vorrichtung zur Herstellung epitaktischer Aufwachsschichten auf gleichzeitig mehreren einkristallinen Scheiben aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
GB985371A true GB985371A (en) 1965-03-10

Family

ID=7509991

Family Applications (1)

Application Number Title Priority Date Filing Date
GB38913/63A Expired GB985371A (en) 1962-10-05 1963-10-03 Improvements in or relating to processes for the production of monocrystalline layers of semiconductor materials

Country Status (5)

Country Link
CH (1) CH442249A (enrdf_load_stackoverflow)
DE (1) DE1216851B (enrdf_load_stackoverflow)
FR (1) FR1372155A (enrdf_load_stackoverflow)
GB (1) GB985371A (enrdf_load_stackoverflow)
NL (1) NL298449A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (enrdf_load_stackoverflow) * 1951-03-07 1900-01-01

Also Published As

Publication number Publication date
FR1372155A (fr) 1964-09-11
DE1216851C2 (enrdf_load_stackoverflow) 1966-12-01
NL298449A (enrdf_load_stackoverflow)
CH442249A (de) 1967-08-31
DE1216851B (de) 1966-05-18

Similar Documents

Publication Publication Date Title
GB1075398A (en) Improvements in or relating to the production of monocrystalline layers of semiconductor material
GB772691A (en) Improvements in or relating to the manufacture of silicon carbide crystals
GB812818A (en) Improvements in or relating to processes for the production of extremely pure substances
GB1247585A (en) Improvements in or relating to the deposition of layers of inorganic materials on the surfaces of semiconductor bodies
GB970635A (en) Apparatus for growing whiskers
GB1236913A (en) Manufacture of silicon carbide
US3206331A (en) Method for coating articles with pyrolitic graphite
GB1132491A (en) Improvements in or relating to the manufacture of semiconductor systems
ES423463A1 (es) Procedimiento para la produccion de pigmentos ceramicos.
GB1242051A (en) Improvements in the manufacture of silicon carbide
GB985371A (en) Improvements in or relating to processes for the production of monocrystalline layers of semiconductor materials
GB934673A (en) Improvements in or relating to the production of semi-conductor materials
GB1105870A (en) Manufacture of silicon carbide ribbons
GB896258A (en) A process for the manufacture of very pure silicon
GB995543A (en) Method for producing semiconductor films on semiconductor substrates
GB1099098A (en) Improvements in or relating to the manufacture of semiconductor layers
GB1035499A (en) Process for the manufacture of crystalline layers from low volatility substances in the gas phase
US3170825A (en) Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate
GB1237952A (enrdf_load_stackoverflow)
US3120450A (en) Method for depositing carbon coatings on high temperature material members
FR2114105A5 (en) Epitaxial radiation heated reactor - including a quartz reaction chamber
GB1017249A (en) Improvements in or relating to the deposition of semi-conductor materials
GB1378302A (en) Production of semiconductor rods
GB1075555A (en) Process for the formation of a layer of a semiconductor material on a crystalline base
JPS6473078A (en) C.v.d. device