DE1216851C2 - - Google Patents

Info

Publication number
DE1216851C2
DE1216851C2 DE1962S0081907 DES0081907A DE1216851C2 DE 1216851 C2 DE1216851 C2 DE 1216851C2 DE 1962S0081907 DE1962S0081907 DE 1962S0081907 DE S0081907 A DES0081907 A DE S0081907A DE 1216851 C2 DE1216851 C2 DE 1216851C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1962S0081907
Other languages
German (de)
Other versions
DE1216851B (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL298449D priority Critical patent/NL298449A/xx
Application filed filed Critical
Priority to DES81907A priority patent/DE1216851B/de
Priority to CH998463A priority patent/CH442249A/de
Priority to GB38913/63A priority patent/GB985371A/en
Priority to FR949461A priority patent/FR1372155A/fr
Publication of DE1216851B publication Critical patent/DE1216851B/de
Application granted granted Critical
Publication of DE1216851C2 publication Critical patent/DE1216851C2/de
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DES81907A 1962-10-05 1962-10-05 Vorrichtung und Verfahren zum Betrieb der Vorrichtung zur Herstellung epitaktischer Aufwachsschichten auf gleichzeitig mehreren einkristallinen Scheiben aus Halbleitermaterial Granted DE1216851B (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL298449D NL298449A (enrdf_load_stackoverflow) 1962-10-05
DES81907A DE1216851B (de) 1962-10-05 1962-10-05 Vorrichtung und Verfahren zum Betrieb der Vorrichtung zur Herstellung epitaktischer Aufwachsschichten auf gleichzeitig mehreren einkristallinen Scheiben aus Halbleitermaterial
CH998463A CH442249A (de) 1962-10-05 1963-08-13 Verfahren zum Herstellen von einkristallinen Halbleiterschichten auf scheibenförmigen Einkristallen
GB38913/63A GB985371A (en) 1962-10-05 1963-10-03 Improvements in or relating to processes for the production of monocrystalline layers of semiconductor materials
FR949461A FR1372155A (fr) 1962-10-05 1963-10-03 Procédé pour faire croître épitaxialement des couches semi-conductrices sur des pastilles monocristallines de substance semi-conductrice

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES81907A DE1216851B (de) 1962-10-05 1962-10-05 Vorrichtung und Verfahren zum Betrieb der Vorrichtung zur Herstellung epitaktischer Aufwachsschichten auf gleichzeitig mehreren einkristallinen Scheiben aus Halbleitermaterial

Publications (2)

Publication Number Publication Date
DE1216851B DE1216851B (de) 1966-05-18
DE1216851C2 true DE1216851C2 (enrdf_load_stackoverflow) 1966-12-01

Family

ID=7509991

Family Applications (1)

Application Number Title Priority Date Filing Date
DES81907A Granted DE1216851B (de) 1962-10-05 1962-10-05 Vorrichtung und Verfahren zum Betrieb der Vorrichtung zur Herstellung epitaktischer Aufwachsschichten auf gleichzeitig mehreren einkristallinen Scheiben aus Halbleitermaterial

Country Status (5)

Country Link
CH (1) CH442249A (enrdf_load_stackoverflow)
DE (1) DE1216851B (enrdf_load_stackoverflow)
FR (1) FR1372155A (enrdf_load_stackoverflow)
GB (1) GB985371A (enrdf_load_stackoverflow)
NL (1) NL298449A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (enrdf_load_stackoverflow) * 1951-03-07 1900-01-01

Also Published As

Publication number Publication date
DE1216851B (de) 1966-05-18
NL298449A (enrdf_load_stackoverflow)
CH442249A (de) 1967-08-31
FR1372155A (fr) 1964-09-11
GB985371A (en) 1965-03-10

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