GB9804385D0 - Scribing materials - Google Patents
Scribing materialsInfo
- Publication number
- GB9804385D0 GB9804385D0 GBGB9804385.4A GB9804385A GB9804385D0 GB 9804385 D0 GB9804385 D0 GB 9804385D0 GB 9804385 A GB9804385 A GB 9804385A GB 9804385 D0 GB9804385 D0 GB 9804385D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- scribing
- materials
- scribing materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Led Devices (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80873497A | 1997-02-28 | 1997-02-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9804385D0 true GB9804385D0 (en) | 1998-04-22 |
| GB2322737A GB2322737A (en) | 1998-09-02 |
Family
ID=25199579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9804385A Withdrawn GB2322737A (en) | 1997-02-28 | 1998-03-02 | Scribing and breaking semiconductor substrates |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP3167668B2 (en) |
| KR (1) | KR19980070042A (en) |
| CN (1) | CN1192043A (en) |
| DE (1) | DE19753492A1 (en) |
| GB (1) | GB2322737A (en) |
| TW (1) | TW353202B (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1142598C (en) | 1997-07-25 | 2004-03-17 | 日亚化学工业株式会社 | Nitride semiconductor device |
| JP3770014B2 (en) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | Nitride semiconductor device |
| WO2000052796A1 (en) | 1999-03-04 | 2000-09-08 | Nichia Corporation | Nitride semiconductor laser element |
| US6350664B1 (en) | 1999-09-02 | 2002-02-26 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP2001110755A (en) * | 1999-10-04 | 2001-04-20 | Tokyo Seimitsu Co Ltd | Method of manufacturing semiconductor chip |
| JP3368876B2 (en) * | 1999-11-05 | 2003-01-20 | 株式会社東京精密 | Semiconductor chip manufacturing method |
| DE10026255A1 (en) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor element has a semiconductor body formed by a stack of different semiconductor layers based on gallium nitride |
| DE10051465A1 (en) | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Method for producing a GaN-based semiconductor component |
| WO2001084640A1 (en) | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Gan-based light-emitting-diode chip and a method for producing a luminescent diode component |
| EP1277240B1 (en) | 2000-04-26 | 2015-05-20 | OSRAM Opto Semiconductors GmbH | Method of manufacturing a light-emitting semiconductor element |
| TWI292227B (en) | 2000-05-26 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan |
| JP4710148B2 (en) * | 2001-02-23 | 2011-06-29 | パナソニック株式会社 | Manufacturing method of nitride semiconductor chip |
| KR100681828B1 (en) * | 2005-07-20 | 2007-02-12 | 주식회사 에스에프에이 | Multi braking system |
| TWI326274B (en) * | 2005-07-20 | 2010-06-21 | Sfa Engineering Corp | Scribing apparatus and method, and multi-breaking system |
| TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
| CN101958383B (en) * | 2010-10-07 | 2012-07-11 | 安徽三安光电有限公司 | Manufacturing method of inversed AlGaInP light emitting diode |
| CN102837369B (en) * | 2012-09-18 | 2015-06-03 | 广东工业大学 | Process method for green laser scribing sapphire |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2121455A1 (en) * | 1971-04-30 | 1972-11-02 | Siemens AG, 1000 Berlin u. 8000 München | Method for dividing plate-shaped workpieces |
| DK0613765T3 (en) * | 1993-03-02 | 2000-04-03 | Ceramtec Ag | Process for producing divisible sheets of crisp material with high accuracy |
| US5418190A (en) * | 1993-12-30 | 1995-05-23 | At&T Corp. | Method of fabrication for electro-optical devices |
-
1997
- 1997-10-22 TW TW086115595A patent/TW353202B/en active
- 1997-10-27 KR KR1019970055213A patent/KR19980070042A/en not_active Application Discontinuation
- 1997-12-02 DE DE19753492A patent/DE19753492A1/en not_active Withdrawn
- 1997-12-03 CN CN97125355A patent/CN1192043A/en active Pending
-
1998
- 1998-02-03 JP JP2186298A patent/JP3167668B2/en not_active Expired - Fee Related
- 1998-03-02 GB GB9804385A patent/GB2322737A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10256193A (en) | 1998-09-25 |
| GB2322737A (en) | 1998-09-02 |
| KR19980070042A (en) | 1998-10-26 |
| DE19753492A1 (en) | 1998-09-03 |
| CN1192043A (en) | 1998-09-02 |
| TW353202B (en) | 1999-02-21 |
| JP3167668B2 (en) | 2001-05-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) | ||
| 732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) |