GB970456A - Improvements in or relating to processes for the preparation of semiconductor arrangements - Google Patents
Improvements in or relating to processes for the preparation of semiconductor arrangementsInfo
- Publication number
- GB970456A GB970456A GB414763A GB414763A GB970456A GB 970456 A GB970456 A GB 970456A GB 414763 A GB414763 A GB 414763A GB 414763 A GB414763 A GB 414763A GB 970456 A GB970456 A GB 970456A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- support
- conductor
- substrate
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 29
- 238000000034 method Methods 0.000 title abstract 7
- 238000002360 preparation method Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 16
- 239000000463 material Substances 0.000 abstract 14
- 229910052710 silicon Inorganic materials 0.000 abstract 12
- 239000007789 gas Substances 0.000 abstract 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 8
- 229910000039 hydrogen halide Inorganic materials 0.000 abstract 8
- 239000012433 hydrogen halide Substances 0.000 abstract 8
- 239000010703 silicon Substances 0.000 abstract 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 7
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 6
- 239000012159 carrier gas Substances 0.000 abstract 6
- 229910052732 germanium Inorganic materials 0.000 abstract 6
- 150000004820 halides Chemical class 0.000 abstract 6
- 229910052739 hydrogen Inorganic materials 0.000 abstract 6
- 239000001257 hydrogen Substances 0.000 abstract 6
- 239000010453 quartz Substances 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 5
- 229910002804 graphite Inorganic materials 0.000 abstract 5
- 239000010439 graphite Substances 0.000 abstract 5
- 238000006243 chemical reaction Methods 0.000 abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 2
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 238000000354 decomposition reaction Methods 0.000 abstract 2
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 239000012495 reaction gas Substances 0.000 abstract 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 2
- 239000007787 solid Substances 0.000 abstract 2
- 230000003068 static effect Effects 0.000 abstract 2
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 2
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1962S0077852 DE1236481B (de) | 1962-02-02 | 1962-02-02 | Verfahren zur Herstellen einer Halbleiteranordnung durch Abscheiden des Halbleiterstoffes aus der Gasphase |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB970456A true GB970456A (en) | 1964-09-23 |
Family
ID=7507071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB414763A Expired GB970456A (en) | 1962-02-02 | 1963-02-01 | Improvements in or relating to processes for the preparation of semiconductor arrangements |
Country Status (5)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3372671A (en) * | 1965-05-26 | 1968-03-12 | Westinghouse Electric Corp | Apparatus for producing vapor growth of silicon crystals |
| US4587928A (en) * | 1975-12-24 | 1986-05-13 | Tokyo Shibaura Electric Co., Ltd. | Apparatus for producing a semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL187414C (nl) * | 1978-04-21 | 1991-09-16 | Philips Nv | Werkwijze voor het aanbrengen van een epitaxiale laag. |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE943422C (de) * | 1949-04-02 | 1956-05-17 | Licentia Gmbh | Gesteuerter Trockengleichrichter, insbesondere mit Germanium, Silizium oder Siliziumkarbid als halbleitender Substanz |
| DE853926C (de) * | 1949-04-02 | 1952-10-30 | Licentia Gmbh | Verfahren zum Herstellen von Trockengleichrichtern mit Silizium als halbleitender Substanz |
| BE509317A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1951-03-07 | 1900-01-01 | ||
| DE950848C (de) * | 1953-03-19 | 1956-10-18 | Heraeus Gmbh W C | Verfahren zur Herstellung von reinem Silicium |
| DE1057845B (de) * | 1954-03-10 | 1959-05-21 | Licentia Gmbh | Verfahren zur Herstellung von einkristallinen halbleitenden Verbindungen |
| DE966471C (de) * | 1954-07-14 | 1957-08-08 | Heraeus Gmbh W C | Verfahren zur Herstellung von reinem Silicium |
| DE1063870B (de) * | 1956-06-28 | 1959-08-20 | Gustav Weissenberg | Verfahren und Vorrichtung zum tiegellosen Zuechten von Einkristallen aus hochreinem Silicium oder Germanium |
| NL268294A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1960-10-10 |
-
0
- NL NL288409D patent/NL288409A/xx unknown
-
1962
- 1962-02-02 DE DE1962S0077852 patent/DE1236481B/de active Pending
-
1963
- 1963-01-31 CH CH123363A patent/CH408876A/de unknown
- 1963-02-01 SE SE01158/63A patent/SE325641B/xx unknown
- 1963-02-01 GB GB414763A patent/GB970456A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3372671A (en) * | 1965-05-26 | 1968-03-12 | Westinghouse Electric Corp | Apparatus for producing vapor growth of silicon crystals |
| US4587928A (en) * | 1975-12-24 | 1986-05-13 | Tokyo Shibaura Electric Co., Ltd. | Apparatus for producing a semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| NL288409A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | |
| SE325641B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-07-06 |
| DE1236481B (de) | 1967-03-16 |
| CH408876A (de) | 1966-03-15 |
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