GB968106A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB968106A
GB968106A GB2524361A GB2524361A GB968106A GB 968106 A GB968106 A GB 968106A GB 2524361 A GB2524361 A GB 2524361A GB 2524361 A GB2524361 A GB 2524361A GB 968106 A GB968106 A GB 968106A
Authority
GB
United Kingdom
Prior art keywords
wafer
layer
junction
charge
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2524361A
Other languages
English (en)
Inventor
Ralph David Knott
Eric Wadham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Company PLC
Original Assignee
General Electric Company PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL280849D priority Critical patent/NL280849A/xx
Application filed by General Electric Company PLC filed Critical General Electric Company PLC
Priority to GB2524361A priority patent/GB968106A/en
Priority to FR903275A priority patent/FR1336184A/fr
Priority to US20887162 priority patent/US3361943A/en
Priority to DE19621212215 priority patent/DE1212215C2/de
Publication of GB968106A publication Critical patent/GB968106A/en
Expired legal-status Critical Current

Links

Classifications

    • H10W72/30—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P52/00—
    • H10P95/00—
    • H10W72/20—
    • H10W72/073—
    • H10W72/07336—
    • H10W72/07533—
    • H10W72/5524—
    • H10W90/755—

Landscapes

  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
GB2524361A 1961-07-12 1961-07-12 Improvements in or relating to semiconductor devices Expired GB968106A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL280849D NL280849A (cg-RX-API-DMAC10.html) 1961-07-12
GB2524361A GB968106A (en) 1961-07-12 1961-07-12 Improvements in or relating to semiconductor devices
FR903275A FR1336184A (fr) 1961-07-12 1962-07-06 Perfectionnements aux dispositifs semi-conducteurs
US20887162 US3361943A (en) 1961-07-12 1962-07-10 Semiconductor junction devices which include semiconductor wafers having bevelled edges
DE19621212215 DE1212215C2 (de) 1961-07-12 1962-07-11 Halbleiterbauelement mit einem plattenfoermigen halbleiterkoerper mit pn-uebergangsflaechen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2524361A GB968106A (en) 1961-07-12 1961-07-12 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB968106A true GB968106A (en) 1964-08-26

Family

ID=10224528

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2524361A Expired GB968106A (en) 1961-07-12 1961-07-12 Improvements in or relating to semiconductor devices

Country Status (4)

Country Link
US (1) US3361943A (cg-RX-API-DMAC10.html)
DE (1) DE1212215C2 (cg-RX-API-DMAC10.html)
GB (1) GB968106A (cg-RX-API-DMAC10.html)
NL (1) NL280849A (cg-RX-API-DMAC10.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484660A (en) * 1963-09-20 1969-12-16 Gen Electric Sealed electrical device
FR1466427A (fr) * 1965-12-03 1967-01-20 Comp Generale Electricite Capot étanche pour dispositif semi-conducteur
DE1589496A1 (de) * 1967-01-26 1970-03-26 Bbc Brown Boveri & Cie Halbleiterelement mit abgeschraegter Seitenflaeche und Verfahren zum Herstellen
US3643136A (en) * 1970-05-22 1972-02-15 Gen Electric Glass passivated double beveled semiconductor device with partially spaced preform
DE2358937C3 (de) * 1973-11-27 1976-07-15 Licentia Gmbh Thyristor fuer hochspannung im kilovoltbereich
DE2537984C3 (de) * 1975-08-26 1981-07-16 Siemens AG, 1000 Berlin und 8000 München Thyristor
DE2849184A1 (de) 1978-11-13 1980-05-22 Bbc Brown Boveri & Cie Verfahren zur herstellung eines scheibenfoermigen silizium-halbleiterbauelementes mit negativer anschraegung
JPS5624972A (en) * 1979-08-07 1981-03-10 Mitsubishi Electric Corp Thyristor

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA509126A (en) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Semiconductor translating devices
GB774388A (en) * 1954-01-28 1957-05-08 Marconi Wireless Telegraph Co Improvements in or relating to semi-conducting amplifiers
DE1073632B (de) * 1956-06-18 1960-01-21 Radio Corporation Of America, New York, N. Y. (V. St. A.) Drift-Transistor mit einer Zonenfolge P-N-P bzw. N-P-N und Verfahren zu seiner Herstellung
US2927011A (en) * 1956-07-26 1960-03-01 Texas Instruments Inc Etching of semiconductor materials
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
US2878152A (en) * 1956-11-28 1959-03-17 Texas Instruments Inc Grown junction transistors
NL113266C (cg-RX-API-DMAC10.html) * 1957-01-18
US2929859A (en) * 1957-03-12 1960-03-22 Rca Corp Semiconductor devices
US2879190A (en) * 1957-03-22 1959-03-24 Bell Telephone Labor Inc Fabrication of silicon devices
US3007090A (en) * 1957-09-04 1961-10-31 Ibm Back resistance control for junction semiconductor devices
FR73531E (fr) * 1958-04-30 1960-08-22 Telecommunications Sa Réalisation d'un transistron au germanium obtenu par la méthode de double diffusion
FR1197172A (fr) * 1958-05-28 1959-11-27 Telecommunications Sa Procédé de fabrication applicable aux transistrons par diffusion utilisables en basse fréquence
NL240714A (cg-RX-API-DMAC10.html) * 1958-07-02
US2951191A (en) * 1958-08-26 1960-08-30 Rca Corp Semiconductor devices
NL242556A (cg-RX-API-DMAC10.html) * 1958-08-27
NL243218A (cg-RX-API-DMAC10.html) * 1958-12-24
FR1228285A (fr) * 1959-03-11 1960-08-29 Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes
NL125412C (cg-RX-API-DMAC10.html) * 1959-04-15
FR1273633A (fr) * 1959-11-21 1961-10-13 Siemens Ag Procédé d'obtention d'éléments semi-conducteurs
DE1839161U (de) * 1960-09-20 1961-10-12 Telefunken Patent Halbleiteranordnung.
NL276059A (cg-RX-API-DMAC10.html) * 1961-03-17
US3255055A (en) * 1963-03-20 1966-06-07 Hoffman Electronics Corp Semiconductor device

Also Published As

Publication number Publication date
US3361943A (en) 1968-01-02
DE1212215C2 (de) 1974-03-28
DE1212215B (de) 1974-03-28
NL280849A (cg-RX-API-DMAC10.html) 1900-01-01

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