GB966320A - Improvements in or relating to methods of manufacturing semi-conductor devices - Google Patents

Improvements in or relating to methods of manufacturing semi-conductor devices

Info

Publication number
GB966320A
GB966320A GB18564/61A GB1856461A GB966320A GB 966320 A GB966320 A GB 966320A GB 18564/61 A GB18564/61 A GB 18564/61A GB 1856461 A GB1856461 A GB 1856461A GB 966320 A GB966320 A GB 966320A
Authority
GB
United Kingdom
Prior art keywords
pellet
silicon
gallium
semi
conductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB18564/61A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB966320A publication Critical patent/GB966320A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/02Making non-ferrous alloys by melting
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C28/00Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Molds, Cores, And Manufacturing Methods Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB18564/61A 1960-05-25 1961-05-23 Improvements in or relating to methods of manufacturing semi-conductor devices Expired GB966320A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL251987 1960-05-25

Publications (1)

Publication Number Publication Date
GB966320A true GB966320A (en) 1964-08-12

Family

ID=19752375

Family Applications (1)

Application Number Title Priority Date Filing Date
GB18564/61A Expired GB966320A (en) 1960-05-25 1961-05-23 Improvements in or relating to methods of manufacturing semi-conductor devices

Country Status (6)

Country Link
BE (1) BE604107A (enrdf_load_stackoverflow)
CH (1) CH386006A (enrdf_load_stackoverflow)
DE (1) DE1219240B (enrdf_load_stackoverflow)
FR (1) FR1289394A (enrdf_load_stackoverflow)
GB (1) GB966320A (enrdf_load_stackoverflow)
NL (1) NL251987A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544290B2 (de) * 1962-09-21 1972-11-09 Siemens AG, 1000 Berlin u. 8000 München Verfahren zum herstellen eines hoeheren dotierungsgrades in halbleitermaterialien, als ihn die loeslichkeit eines fremdstoffes im halbleitermaterial zulaesst

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL190760A (enrdf_load_stackoverflow) * 1954-02-27

Also Published As

Publication number Publication date
CH386006A (de) 1964-12-31
DE1219240B (de) 1966-06-16
BE604107A (fr) 1961-11-20
FR1289394A (fr) 1962-03-30
NL251987A (enrdf_load_stackoverflow)

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