GB9625172D0 - Method of fabricating an aluminum plug using selective chemical vapour deposition - Google Patents

Method of fabricating an aluminum plug using selective chemical vapour deposition

Info

Publication number
GB9625172D0
GB9625172D0 GBGB9625172.3A GB9625172A GB9625172D0 GB 9625172 D0 GB9625172 D0 GB 9625172D0 GB 9625172 A GB9625172 A GB 9625172A GB 9625172 D0 GB9625172 D0 GB 9625172D0
Authority
GB
United Kingdom
Prior art keywords
fabricating
vapour deposition
chemical vapour
selective chemical
aluminum plug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9625172.3A
Other versions
GB2320129A (en
GB2320129B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW85107555A external-priority patent/TW302511B/en
Priority to GB9625172A priority Critical patent/GB2320129B/en
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to NL1004841A priority patent/NL1004841C2/en
Priority to FR9700283A priority patent/FR2750249B1/en
Publication of GB9625172D0 publication Critical patent/GB9625172D0/en
Priority to DE19702388A priority patent/DE19702388C2/en
Priority to JP9039376A priority patent/JPH1012737A/en
Publication of GB2320129A publication Critical patent/GB2320129A/en
Publication of GB2320129B publication Critical patent/GB2320129B/en
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
GB9625172A 1996-06-24 1996-12-04 Method of fabricating an aluminium plug for contact with a semiconductor device Expired - Fee Related GB2320129B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB9625172A GB2320129B (en) 1996-06-24 1996-12-04 Method of fabricating an aluminium plug for contact with a semiconductor device
NL1004841A NL1004841C2 (en) 1996-06-24 1996-12-19 Process for the production of an aluminum plug using selective chemical vapor deposition.
FR9700283A FR2750249B1 (en) 1996-06-24 1997-01-14 PROCESS FOR MANUFACTURING AN ALUMINUM PLUG BY SELECTIVE STEAM CHEMICAL DEPOSITION
DE19702388A DE19702388C2 (en) 1996-06-24 1997-01-23 Method of manufacturing an aluminum lead contact using selective chemical vapor deposition
JP9039376A JPH1012737A (en) 1996-06-24 1997-02-24 Aluminium plug formed by utizing selective chemical vapor-phase growth and its formation

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
TW85107555A TW302511B (en) 1996-06-24 1996-06-24 Method of forming aluminum plug by selective chemical vapor deposition
GB9625172A GB2320129B (en) 1996-06-24 1996-12-04 Method of fabricating an aluminium plug for contact with a semiconductor device
NL1004841A NL1004841C2 (en) 1996-06-24 1996-12-19 Process for the production of an aluminum plug using selective chemical vapor deposition.

Publications (3)

Publication Number Publication Date
GB9625172D0 true GB9625172D0 (en) 1997-01-22
GB2320129A GB2320129A (en) 1998-06-10
GB2320129B GB2320129B (en) 2001-09-26

Family

ID=27268618

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9625172A Expired - Fee Related GB2320129B (en) 1996-06-24 1996-12-04 Method of fabricating an aluminium plug for contact with a semiconductor device

Country Status (5)

Country Link
JP (1) JPH1012737A (en)
DE (1) DE19702388C2 (en)
FR (1) FR2750249B1 (en)
GB (1) GB2320129B (en)
NL (1) NL1004841C2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100354436B1 (en) * 1998-09-29 2002-09-28 삼성전자 주식회사 METHOD OF MANUFACTURING Al-CVD METAL INTERCONNECTION
DE60325555D1 (en) 2002-02-12 2009-02-12 Oc Oerlikon Balzers Ag OPTICAL COMPONENT WITH SUBMICROMETTE CAVITIES
KR100687876B1 (en) * 2005-06-29 2007-02-27 주식회사 하이닉스반도체 Forming process for metal contact of semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PT95233B (en) * 1989-09-09 1998-06-30 Canon Kk PRODUCTION PROCESS OF A DEPOSITED METAL FILM CONTAINING ALUMINUM
US5191099A (en) * 1991-09-05 1993-03-02 Regents Of The University Of Minnesota Chemical vapor deposition of aluminum films using dimethylethylamine alane
US5652180A (en) * 1993-06-28 1997-07-29 Kawasaki Steel Corporation Method of manufacturing semiconductor device with contact structure

Also Published As

Publication number Publication date
JPH1012737A (en) 1998-01-16
NL1004841A1 (en) 1998-06-22
DE19702388A1 (en) 1998-01-08
FR2750249B1 (en) 1999-10-01
FR2750249A1 (en) 1997-12-26
DE19702388C2 (en) 2001-12-13
NL1004841C2 (en) 1999-01-26
GB2320129A (en) 1998-06-10
GB2320129B (en) 2001-09-26

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20081204