GB961281A - Improvements in and relating to methods and devices for the manufacture of a bar by segregation from a melt - Google Patents

Improvements in and relating to methods and devices for the manufacture of a bar by segregation from a melt

Info

Publication number
GB961281A
GB961281A GB14842/63A GB1484263A GB961281A GB 961281 A GB961281 A GB 961281A GB 14842/63 A GB14842/63 A GB 14842/63A GB 1484263 A GB1484263 A GB 1484263A GB 961281 A GB961281 A GB 961281A
Authority
GB
United Kingdom
Prior art keywords
melt
rod
reservoir
pulled
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB14842/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB961281A publication Critical patent/GB961281A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

961,281. Crystal pulling. PHILIPS ELECTRICAL INDUSTRIES Ltd. April 16, 1963 [April 18, 1962], No. 14842/63. Heading B1S. A rod of a peritectic compound or mixed crystal is pulled from a melt of a different composition, said melt being of small volume and being replenished by melt which is of the same composition as the rod and which is fed from a large volume of melt in a reservoir maintained at a temperature higher than that of the melt being replenished. A peritectic rod of Tl 2 Te 3 may be pulled at 3 mm./hr. from a melt containing 29-34 atom per cent of Tl at 250 ‹C., the replenishing melt being at 320 ‹C. The rod may initially be of T1Te and the crystallizing melt may initially be of Tl 2 Te 3 at 300 ‹C., the temperature being lowered as pulling proceeds. A mixed crystal rod of equal quantities of Bi 2 Te 3 and Sb 2 Te 3 may be pulled at 4 mm./hr. from a melt containing 37% of SbTe at 600 ‹C., the replenishing melt being at 610 ‹C. The rod may initially be of SbTe and the crystallizing melt may initially be the same as the replenishing melt. As shown, a rod 21 is pulled in a vessel 1 from a melt 20 the temperature of which is controlled by a resistance heating furnace 7. Melt 20 is replenished under the action of gravity by melt 22 in a reservoir 9 connected to vessel 1 by a capillary tube 8. The temperatures of melt in reservoir 9 and capillary tube 8 are controlled by resistance heating furnaces 11 and 10. Hydrogen is passed through the apparatus via inlet 14, tube 16, cock 18, and outlet 15 during pulling. An increased pressure in reservoir 9 may be provided at the commencement of pulling by turning cock 18. Rod 21 may be rotated during pulling. In another embodiment, Fig. 2 (not shown), a controlled difference in pressure between the atmospheres above the crystallizing melt and the melt in the reservoir is used to supply the replenishing melt. A rod of a compound having a volatile constituent may be pulled from a melt containing a lower proportion of the volatile constituent, the vapour pressure of the volatile constituent being less above the crystallizing melt than above the melt in the reservoir.
GB14842/63A 1962-04-18 1963-04-16 Improvements in and relating to methods and devices for the manufacture of a bar by segregation from a melt Expired GB961281A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEN0021469 1962-04-18

Publications (1)

Publication Number Publication Date
GB961281A true GB961281A (en) 1964-06-17

Family

ID=7341733

Family Applications (1)

Application Number Title Priority Date Filing Date
GB14842/63A Expired GB961281A (en) 1962-04-18 1963-04-16 Improvements in and relating to methods and devices for the manufacture of a bar by segregation from a melt

Country Status (5)

Country Link
US (1) US3305485A (en)
BE (1) BE631173A (en)
CH (1) CH454097A (en)
DE (1) DE1251272B (en)
GB (1) GB961281A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3137741A1 (en) * 1980-09-24 1982-06-09 Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven METHOD FOR PRODUCING SINGLE CRYSTALS

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2420899A1 (en) * 1974-04-30 1975-12-11 Wacker Chemitronic METHOD FOR PRODUCING SINGLE CRYSTALLINE GALLIUM ARSENIDE
US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
DE2903061A1 (en) * 1979-01-26 1980-08-07 Heliotronic Gmbh METHOD FOR PRODUCING LARGE CRYSTALLINE, PREFERRED ORIENTED SILICON FILMS
US4246064A (en) * 1979-07-02 1981-01-20 Western Electric Company, Inc. Double crucible crystal growing process
US4282184A (en) * 1979-10-09 1981-08-04 Siltec Corporation Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace
US5047112A (en) * 1990-08-14 1991-09-10 The United States Of America As Represented By The United States Department Of Energy Method for preparing homogeneous single crystal ternary III-V alloys
JPH10158088A (en) * 1996-11-25 1998-06-16 Ebara Corp Production of solid material and device therefor
WO2006028868A2 (en) 2004-09-01 2006-03-16 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
US3025191A (en) * 1953-07-13 1962-03-13 Raytheon Co Crystal-growing apparatus and methods
US3058854A (en) * 1953-08-20 1962-10-16 Stephen J Angello Semiconductor alloys and method of preparing the same
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors
US2957937A (en) * 1958-06-16 1960-10-25 Rca Corp Thermoelectric materials
DE1226993B (en) * 1958-07-23 1966-10-20 Philips Nv Process for the production of thallium telluride of the composition Tl Te or isomorphic mixed crystal compounds based on Tl Te

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3137741A1 (en) * 1980-09-24 1982-06-09 Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven METHOD FOR PRODUCING SINGLE CRYSTALS

Also Published As

Publication number Publication date
BE631173A (en) 1900-01-01
CH454097A (en) 1968-04-15
US3305485A (en) 1967-02-21
DE1251272B (en) 1967-10-05

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