CH454097A - Method and device for producing a rod by growing it from a melt - Google Patents
Method and device for producing a rod by growing it from a meltInfo
- Publication number
- CH454097A CH454097A CH475763A CH475763A CH454097A CH 454097 A CH454097 A CH 454097A CH 475763 A CH475763 A CH 475763A CH 475763 A CH475763 A CH 475763A CH 454097 A CH454097 A CH 454097A
- Authority
- CH
- Switzerland
- Prior art keywords
- growing
- melt
- producing
- rod
- Prior art date
Links
- 239000000155 melt Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEN0021469 | 1962-04-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH454097A true CH454097A (en) | 1968-04-15 |
Family
ID=7341733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH475763A CH454097A (en) | 1962-04-18 | 1963-04-16 | Method and device for producing a rod by growing it from a melt |
Country Status (5)
Country | Link |
---|---|
US (1) | US3305485A (en) |
BE (1) | BE631173A (en) |
CH (1) | CH454097A (en) |
DE (1) | DE1251272B (en) |
GB (1) | GB961281A (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2420899A1 (en) * | 1974-04-30 | 1975-12-11 | Wacker Chemitronic | METHOD FOR PRODUCING SINGLE CRYSTALLINE GALLIUM ARSENIDE |
US4036595A (en) * | 1975-11-06 | 1977-07-19 | Siltec Corporation | Continuous crystal growing furnace |
DE2903061A1 (en) * | 1979-01-26 | 1980-08-07 | Heliotronic Gmbh | METHOD FOR PRODUCING LARGE CRYSTALLINE, PREFERRED ORIENTED SILICON FILMS |
US4246064A (en) * | 1979-07-02 | 1981-01-20 | Western Electric Company, Inc. | Double crucible crystal growing process |
US4282184A (en) * | 1979-10-09 | 1981-08-04 | Siltec Corporation | Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace |
NL8005312A (en) * | 1980-09-24 | 1982-04-16 | Philips Nv | METHOD FOR MANUFACTURING FERRITE SINGLE CRYSTALS |
US5047112A (en) * | 1990-08-14 | 1991-09-10 | The United States Of America As Represented By The United States Department Of Energy | Method for preparing homogeneous single crystal ternary III-V alloys |
JPH10158088A (en) * | 1996-11-25 | 1998-06-16 | Ebara Corp | Production of solid material and device therefor |
US7641733B2 (en) * | 2004-09-01 | 2010-01-05 | Rensselaer Polytechnic Institute | Method and apparatus for growth of multi-component single crystals |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1061527B (en) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Process for zone-wise remelting of rods and other elongated workpieces |
US3025191A (en) * | 1953-07-13 | 1962-03-13 | Raytheon Co | Crystal-growing apparatus and methods |
US3058854A (en) * | 1953-08-20 | 1962-10-16 | Stephen J Angello | Semiconductor alloys and method of preparing the same |
US2809136A (en) * | 1954-03-10 | 1957-10-08 | Sylvania Electric Prod | Apparatus and method of preparing crystals of silicon germanium group |
US2892739A (en) * | 1954-10-01 | 1959-06-30 | Honeywell Regulator Co | Crystal growing procedure |
US3002821A (en) * | 1956-10-22 | 1961-10-03 | Texas Instruments Inc | Means for continuous fabrication of graded junction transistors |
US2957937A (en) * | 1958-06-16 | 1960-10-25 | Rca Corp | Thermoelectric materials |
DE1226993B (en) * | 1958-07-23 | 1966-10-20 | Philips Nv | Process for the production of thallium telluride of the composition Tl Te or isomorphic mixed crystal compounds based on Tl Te |
-
0
- BE BE631173D patent/BE631173A/xx unknown
- DE DEN21469A patent/DE1251272B/en not_active Withdrawn
-
1963
- 1963-04-16 US US273509A patent/US3305485A/en not_active Expired - Lifetime
- 1963-04-16 GB GB14842/63A patent/GB961281A/en not_active Expired
- 1963-04-16 CH CH475763A patent/CH454097A/en unknown
Also Published As
Publication number | Publication date |
---|---|
GB961281A (en) | 1964-06-17 |
US3305485A (en) | 1967-02-21 |
DE1251272B (en) | 1967-10-05 |
BE631173A (en) | 1900-01-01 |
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