GB960892A - Improvements in or relating to methods of producing doped silicon or germanium - Google Patents

Improvements in or relating to methods of producing doped silicon or germanium

Info

Publication number
GB960892A
GB960892A GB21466/61A GB2146661A GB960892A GB 960892 A GB960892 A GB 960892A GB 21466/61 A GB21466/61 A GB 21466/61A GB 2146661 A GB2146661 A GB 2146661A GB 960892 A GB960892 A GB 960892A
Authority
GB
United Kingdom
Prior art keywords
silicon
germanium
carrier
doping
halide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21466/61A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB960892A publication Critical patent/GB960892A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3411—
    • H10P14/3442—
    • H10P14/3444—
    • H10P14/3458—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB21466/61A 1960-06-14 1961-06-14 Improvements in or relating to methods of producing doped silicon or germanium Expired GB960892A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES68933A DE1193918B (de) 1960-06-14 1960-06-14 Verfahren zum Herstellen eines homogen dotierten, einkristallinen Halbleiterkoerpersdurch Zersetzen dampffoermiger Halbleiterhalogenide

Publications (1)

Publication Number Publication Date
GB960892A true GB960892A (en) 1964-06-17

Family

ID=7500612

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21466/61A Expired GB960892A (en) 1960-06-14 1961-06-14 Improvements in or relating to methods of producing doped silicon or germanium

Country Status (5)

Country Link
US (1) US3172857A (en:Method)
CH (1) CH400711A (en:Method)
DE (1) DE1193918B (en:Method)
GB (1) GB960892A (en:Method)
NL (2) NL131267C (en:Method)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328199A (en) * 1960-01-15 1967-06-27 Siemens Ag Method of producing monocrystalline silicon of high purity
DE1224279B (de) * 1964-01-03 1966-09-08 Siemens Ag Verfahren zur Herstellung kristalliner, insbesondere einkristalliner, aus Halbleiter-material bestehender, dotierter Schichten auf kristallinen Grundkoerpern aus Halbleitermaterial
DE1245335B (de) * 1964-06-26 1967-07-27 Siemens Ag Verfahren zur Herstellung einkristalliner, homogen bordotierter, insbesondere aus Silicium oder Germanium bestehender Aufwachsschichten auf einkristallinen Grundkoerpern
DE2831816A1 (de) 1978-07-19 1980-01-31 Siemens Ag Verfahren zum abscheiden von silicium in feinkristalliner form

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2556711A (en) * 1947-10-29 1951-06-12 Bell Telephone Labor Inc Method of producing rectifiers and rectifier material
DE883784C (de) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
GB778383A (en) * 1953-10-02 1957-07-03 Standard Telephones Cables Ltd Improvements in or relating to the production of material for semi-conductors
DE1054436B (de) * 1956-02-11 1959-04-09 Pechiney Prod Chimiques Sa Verfahren zur Herstellung von kompaktem Silicium hohen Reinheitsgrades
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
NL236715A (en:Method) * 1958-03-03
DE1719025A1 (en:Method) * 1958-09-20 1900-01-01

Also Published As

Publication number Publication date
US3172857A (en) 1965-03-09
NL265948A (en:Method) 1900-01-01
DE1193918B (de) 1965-06-03
NL131267C (en:Method) 1900-01-01
CH400711A (de) 1965-10-15

Similar Documents

Publication Publication Date Title
GB907179A (en) An improved process for making silicone rubber fillers
ES433438A1 (es) Procedimiento para la preparacion de una mezcla gaseosa quecontiene sicl4 y sihcl3
KR890011029A (ko) 기상에피택셜 성장법
GB960892A (en) Improvements in or relating to methods of producing doped silicon or germanium
Hollandsworth et al. Chlorodisilanes. Preparation and silicon-hydrogen stretching frequencies
GB943360A (en) Monocrystalline silicon
GB642630A (en) A process for the production of dimethyl silicon dichloride
GB926807A (en) Methods of forming silicon and silicon formed by the method
GB967185A (en) Method of producing specified ó¾í¬v compounds
GB874166A (en) Improvements in the preparation of boron nitride
Wells et al. Studies of Silicon-Nitrogen Compounds. The Base-Catalyzed Elimination of Silane from Trisilylamine1, 2
White et al. Rotating sector study of the gas phase photolysis of the carbon tetrachloride–cyclohexane system
Shaffer et al. The Hydrolysis of Alkyl and Aryl Chlorosilanes. II. Rates and Mechanism of Hydrolysis in Homogeneous Solution
Moscony et al. Synthesis of methylfluorosilicates and trifluorosilyl ethers and amines
Dominguez et al. Analysis of the low pressure gas composition in the etching of silicon
Taft Jr et al. Thermodynamic Properties for the System Isobutene-t-Butyl Alcohol1
Doncaster et al. Kinetics and mechanism of the gas phase thermal decomposition of hexachlorodisilane in the presence of iodine
GB929696A (en) Improvements in and relating to the preparation of silicon halides or silicon hydride halides
GB969343A (en) Improvements in or relating to tertiary amine preparation
GB761205A (en) Improvements relating to the disproportionation of halogenosilanes
SU322115A1 (ru) Способ получени эпитаксиальных слоев
SU327779A1 (ru) Способ получени кристаллов карбида кремни
GB1007555A (en) Semiconductor material
GB1056720A (en) Improved method of epitaxially vapour depositing semiconductor material
Hughes et al. Pyrolysis of Allyl Chloride