GB958838A - Improvements in or relating to methods of manufacturing monocrystalline bodies of semiconductor material - Google Patents
Improvements in or relating to methods of manufacturing monocrystalline bodies of semiconductor materialInfo
- Publication number
- GB958838A GB958838A GB2940/61A GB294061A GB958838A GB 958838 A GB958838 A GB 958838A GB 2940/61 A GB2940/61 A GB 2940/61A GB 294061 A GB294061 A GB 294061A GB 958838 A GB958838 A GB 958838A
- Authority
- GB
- United Kingdom
- Prior art keywords
- core
- indium
- impurities
- marginal
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000463 material Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 6
- 229910052738 indium Inorganic materials 0.000 abstract 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 4
- 239000000155 melt Substances 0.000 abstract 4
- 229910052698 phosphorus Inorganic materials 0.000 abstract 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- 229910052733 gallium Inorganic materials 0.000 abstract 3
- 239000011574 phosphorus Substances 0.000 abstract 3
- 238000005204 segregation Methods 0.000 abstract 3
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000000370 acceptor Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052716 thallium Inorganic materials 0.000 abstract 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL247854 | 1960-01-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB958838A true GB958838A (en) | 1964-05-27 |
Family
ID=19752141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2940/61A Expired GB958838A (en) | 1960-01-28 | 1961-01-25 | Improvements in or relating to methods of manufacturing monocrystalline bodies of semiconductor material |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3198671A (enEXAMPLES) |
| DE (1) | DE1235867B (enEXAMPLES) |
| GB (1) | GB958838A (enEXAMPLES) |
| NL (2) | NL247854A (enEXAMPLES) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3377209A (en) * | 1964-05-01 | 1968-04-09 | Ca Nat Research Council | Method of making p-n junctions by hydrothermally growing |
| US3470039A (en) * | 1966-12-21 | 1969-09-30 | Texas Instruments Inc | Continuous junction growth |
| US3773499A (en) * | 1968-04-03 | 1973-11-20 | M Melnikov | Method of zonal melting of materials |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2879189A (en) * | 1956-11-21 | 1959-03-24 | Shockley William | Method for growing junction semi-conductive devices |
| AT204606B (de) * | 1957-06-25 | 1959-08-10 | Western Electric Co | Verfahren zum Auskristallisieren von Halbleitermaterial |
| NL229017A (enEXAMPLES) * | 1957-06-25 | 1900-01-01 |
-
0
- NL NL109018D patent/NL109018C/xx active
- NL NL247854D patent/NL247854A/xx unknown
-
1961
- 1961-01-24 DE DEN19477A patent/DE1235867B/de active Pending
- 1961-01-25 GB GB2940/61A patent/GB958838A/en not_active Expired
- 1961-01-25 US US84924A patent/US3198671A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE1235867B (de) | 1967-03-09 |
| NL247854A (enEXAMPLES) | |
| NL109018C (enEXAMPLES) | |
| US3198671A (en) | 1965-08-03 |
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