GB952361A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB952361A
GB952361A GB31576/60A GB3157660A GB952361A GB 952361 A GB952361 A GB 952361A GB 31576/60 A GB31576/60 A GB 31576/60A GB 3157660 A GB3157660 A GB 3157660A GB 952361 A GB952361 A GB 952361A
Authority
GB
United Kingdom
Prior art keywords
wafer
germanium
charge
silicon
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB31576/60A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB952361A publication Critical patent/GB952361A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB31576/60A 1959-09-29 1960-09-13 Semiconductor devices Expired GB952361A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84318659A 1959-09-29 1959-09-29

Publications (1)

Publication Number Publication Date
GB952361A true GB952361A (en) 1964-03-18

Family

ID=25289283

Family Applications (1)

Application Number Title Priority Date Filing Date
GB31576/60A Expired GB952361A (en) 1959-09-29 1960-09-13 Semiconductor devices

Country Status (6)

Country Link
CH (1) CH397871A (enExample)
DE (1) DE1219127B (enExample)
DK (1) DK119168B (enExample)
ES (1) ES261334A1 (enExample)
GB (1) GB952361A (enExample)
NL (1) NL256342A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2484702A1 (fr) * 1980-06-16 1981-12-18 Nishizawa Junichi Procede pour la fabrication de jonction pn de semi-conducteurs

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL292671A (enExample) 1962-05-14

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
USRE24537E (en) * 1952-07-29 1958-09-23 Unsymmetrical conductor arrangements
US2765245A (en) * 1952-08-22 1956-10-02 Gen Electric Method of making p-n junction semiconductor units
US2821493A (en) * 1954-03-18 1958-01-28 Hughes Aircraft Co Fused junction transistors with regrown base regions
GB864771A (en) * 1956-11-23 1961-04-06 Pye Ltd Improvements in or relating to junction transistors
DE1062823B (de) * 1957-07-13 1959-08-06 Telefunken Gmbh Verfahren zur Herstellung von Kristalloden des Legierungstyps
NL243304A (enExample) 1959-09-12 1900-01-01

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2484702A1 (fr) * 1980-06-16 1981-12-18 Nishizawa Junichi Procede pour la fabrication de jonction pn de semi-conducteurs
US4526632A (en) * 1980-06-16 1985-07-02 Jun-Ichi Nishizawa Method of fabricating a semiconductor pn junction

Also Published As

Publication number Publication date
NL256342A (enExample)
DK119168B (da) 1970-11-23
ES261334A1 (es) 1961-03-16
CH397871A (de) 1965-08-31
DE1219127B (de) 1966-06-16

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