GB948588A - Improvements in or relating to processes and apparatus for the homogeneous application of metals to high-resistance solid bodies difficult to plate - Google Patents
Improvements in or relating to processes and apparatus for the homogeneous application of metals to high-resistance solid bodies difficult to plateInfo
- Publication number
- GB948588A GB948588A GB23840/62A GB2384062A GB948588A GB 948588 A GB948588 A GB 948588A GB 23840/62 A GB23840/62 A GB 23840/62A GB 2384062 A GB2384062 A GB 2384062A GB 948588 A GB948588 A GB 948588A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- electrolyte
- metals
- relating
- processes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 title abstract 3
- 239000002184 metal Substances 0.000 title abstract 3
- 239000007787 solid Substances 0.000 title abstract 2
- 150000002739 metals Chemical class 0.000 title 1
- 239000003792 electrolyte Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229920000647 polyepoxide Polymers 0.000 abstract 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Surface Heating Bodies (AREA)
Abstract
<PICT:0948588/C3/1> Bodies of high electrical resistance, e.g. silicon, germanium, gallium arsenide, are uniformly plated with a metal, by disposing the body in the form of a solid wafer 15 as a bipolar electrode between an anode and cathode 18, e.g. of pure aluminium, immersed in an electrolyte from which metal is deposited on the face of the wafer disc facing the anode. The electrolyte is contained in two half-U tubes connected at their lower ends by a cap and nut 13, 14, which includes two apertured diaphragms 16, made of epoxy resin and clamped between the flanges of the glass U tube and holding the wafer disc. The aperture of diaphragm facing the cathode is of frustoconical form to promote the escape of gases. The electrolyte specified is one part NaF and two of Al(Et)3, used at 100 DEG C., and forms a uniform aluminium coating on the silicon disc wafer, which coating may be tempered by heating.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0074488 | 1961-06-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB948588A true GB948588A (en) | 1964-02-05 |
Family
ID=7504682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB23840/62A Expired GB948588A (en) | 1961-06-24 | 1962-06-20 | Improvements in or relating to processes and apparatus for the homogeneous application of metals to high-resistance solid bodies difficult to plate |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB948588A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111663167A (en) * | 2020-06-16 | 2020-09-15 | 合肥工业大学 | Metal wire preparation method based on BPE technology |
-
1962
- 1962-06-20 GB GB23840/62A patent/GB948588A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111663167A (en) * | 2020-06-16 | 2020-09-15 | 合肥工业大学 | Metal wire preparation method based on BPE technology |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB890923A (en) | Method of and apparatus for oxygen determination | |
GB948588A (en) | Improvements in or relating to processes and apparatus for the homogeneous application of metals to high-resistance solid bodies difficult to plate | |
CH366602A (en) | Method for rapidly heating the cathode of an electron tube and device for implementing this method | |
Topper et al. | Dropwise condensation of vapors and heat transfer rates | |
GB579824A (en) | Improvements in silicon-crystal rectifiers | |
GB1019940A (en) | Method of growing an oxide film on the surface of a silicon body | |
GB908590A (en) | Charged particle gun | |
GB812597A (en) | Electron gun for tubular beam | |
GB1000264A (en) | Process for use in the production of a semi-conductor device | |
GB1019020A (en) | A process for use in the production of a semi-conductor device | |
GB1148440A (en) | Apparatus and method for ionization detection | |
JPS526076A (en) | Manufacturing process of cathode ray tube | |
US3183051A (en) | Alkali metal vapor lamp manufacture | |
GB2020819A (en) | Percutaneous Blood-Oxygen Concentration Measuring Sensor | |
GB943022A (en) | Improvements in and relating to x-ray tube construction | |
GB796398A (en) | Improvements in or relating to uniting glass or ceramic materials to metal | |
GB580424A (en) | Improvements in electric discharge devices | |
JPS5598443A (en) | Manufacturing method for cathode ray tube | |
Naito et al. | Preparation of the Source of Uranium Ions by Means of Electroplating | |
GB1062026A (en) | Method of effecting the anodic oxidation of thin films of valve metal | |
GB652899A (en) | Improvements in or relating to a process for stripping colour from dyed wool | |
FR1351389A (en) | Improvements to electrochemical generators | |
GB771707A (en) | Improvements in the manufacture of geiger-muller counters containing a halogen vapor | |
GB1004083A (en) | Improvements in and relating to quartz-to-metal seals | |
GB482109A (en) | Improvements in or relating to metal-vapour current converters |