GB948588A - Improvements in or relating to processes and apparatus for the homogeneous application of metals to high-resistance solid bodies difficult to plate - Google Patents
Improvements in or relating to processes and apparatus for the homogeneous application of metals to high-resistance solid bodies difficult to plateInfo
- Publication number
- GB948588A GB948588A GB23840/62A GB2384062A GB948588A GB 948588 A GB948588 A GB 948588A GB 23840/62 A GB23840/62 A GB 23840/62A GB 2384062 A GB2384062 A GB 2384062A GB 948588 A GB948588 A GB 948588A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- electrolyte
- metals
- relating
- processes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
Abstract
<PICT:0948588/C3/1> Bodies of high electrical resistance, e.g. silicon, germanium, gallium arsenide, are uniformly plated with a metal, by disposing the body in the form of a solid wafer 15 as a bipolar electrode between an anode and cathode 18, e.g. of pure aluminium, immersed in an electrolyte from which metal is deposited on the face of the wafer disc facing the anode. The electrolyte is contained in two half-U tubes connected at their lower ends by a cap and nut 13, 14, which includes two apertured diaphragms 16, made of epoxy resin and clamped between the flanges of the glass U tube and holding the wafer disc. The aperture of diaphragm facing the cathode is of frustoconical form to promote the escape of gases. The electrolyte specified is one part NaF and two of Al(Et)3, used at 100 DEG C., and forms a uniform aluminium coating on the silicon disc wafer, which coating may be tempered by heating.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0074488 | 1961-06-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB948588A true GB948588A (en) | 1964-02-05 |
Family
ID=7504682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB23840/62A Expired GB948588A (en) | 1961-06-24 | 1962-06-20 | Improvements in or relating to processes and apparatus for the homogeneous application of metals to high-resistance solid bodies difficult to plate |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB948588A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111663167A (en) * | 2020-06-16 | 2020-09-15 | 合肥工业大学 | Metal wire preparation method based on BPE technology |
-
1962
- 1962-06-20 GB GB23840/62A patent/GB948588A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111663167A (en) * | 2020-06-16 | 2020-09-15 | 合肥工业大学 | Metal wire preparation method based on BPE technology |
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