GB941629A - Tecnetron in semiconductor devices - Google Patents

Tecnetron in semiconductor devices

Info

Publication number
GB941629A
GB941629A GB32464/61A GB3246461A GB941629A GB 941629 A GB941629 A GB 941629A GB 32464/61 A GB32464/61 A GB 32464/61A GB 3246461 A GB3246461 A GB 3246461A GB 941629 A GB941629 A GB 941629A
Authority
GB
United Kingdom
Prior art keywords
gate
section
source
drain
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB32464/61A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR838680A external-priority patent/FR1285915A/fr
Application filed by Individual filed Critical Individual
Publication of GB941629A publication Critical patent/GB941629A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/871—Vertical FETs having Schottky gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10P50/613—
    • H10P95/00—

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Thyristors (AREA)
GB32464/61A 1960-09-15 1961-09-11 Tecnetron in semiconductor devices Expired GB941629A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR838680A FR1285915A (fr) 1960-09-15 1960-09-15 Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons à résistance négative et aux procédés de leur fabrication
FR870891A FR80234E (fr) 1960-09-15 1961-08-12 Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons à résistance négative et aux procédés de leur fabrication

Publications (1)

Publication Number Publication Date
GB941629A true GB941629A (en) 1963-11-13

Family

ID=26187503

Family Applications (1)

Application Number Title Priority Date Filing Date
GB32464/61A Expired GB941629A (en) 1960-09-15 1961-09-11 Tecnetron in semiconductor devices

Country Status (6)

Country Link
US (1) US3176203A (cg-RX-API-DMAC10.html)
CH (1) CH395345A (cg-RX-API-DMAC10.html)
DE (1) DE1168569B (cg-RX-API-DMAC10.html)
FR (1) FR80234E (cg-RX-API-DMAC10.html)
GB (1) GB941629A (cg-RX-API-DMAC10.html)
NL (2) NL130953C (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3351880A (en) * 1964-05-04 1967-11-07 Endevco Corp Piezoresistive transducer
US3363153A (en) * 1965-06-01 1968-01-09 Gen Telephone & Elect Solid state triode having gate electrode therein subtending a portion of the source electrode
CH461646A (de) * 1967-04-18 1968-08-31 Ibm Feld-Effekt-Transistor und Verfahren zu seiner Herstellung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1066667B (cg-RX-API-DMAC10.html) * 1959-10-08
BE490958A (cg-RX-API-DMAC10.html) * 1948-09-24
US2939057A (en) * 1957-05-27 1960-05-31 Teszner Stanislas Unipolar field-effect transistors

Also Published As

Publication number Publication date
US3176203A (en) 1965-03-30
CH395345A (de) 1965-07-15
NL130953C (cg-RX-API-DMAC10.html)
FR80234E (fr) 1963-03-29
DE1168569B (de) 1964-04-23
NL269039A (cg-RX-API-DMAC10.html)
DE1168569C2 (cg-RX-API-DMAC10.html) 1964-11-05

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