GB936203A - Improvements in semi-conductor devices - Google Patents

Improvements in semi-conductor devices

Info

Publication number
GB936203A
GB936203A GB39463A GB39463A GB936203A GB 936203 A GB936203 A GB 936203A GB 39463 A GB39463 A GB 39463A GB 39463 A GB39463 A GB 39463A GB 936203 A GB936203 A GB 936203A
Authority
GB
United Kingdom
Prior art keywords
semi
layer
junction
conductor
germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB39463A
Inventor
William Joseph Scott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB3886658A external-priority patent/GB936202A/en
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Publication of GB936203A publication Critical patent/GB936203A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

936,203. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. Feb. 19, 1960, No. 394/63. Divided out of 936,202. Class 37. A semi-conductor device is made by forming a layer of semi-conductor on a semi-conductor body of lower conductivity but the same conductivity type by deposition from a gaseous phase, forming a rectifying or other non-linear junction in the layer and making ohmic connection to the body and to the side of the junction remote from the body. The layer, typically of germanium and 2 x 10<SP>-5</SP> inches thick, may be formed by dissociation of germanium di-iodide. The junction and associated ohmic connection are formed by a point contact or by an electrode alloyed to the layer to form a PN junction, and the body is ohmically soldered to a base.
GB39463A 1958-12-02 1960-02-19 Improvements in semi-conductor devices Expired GB936203A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB3886658A GB936202A (en) 1958-12-02 1958-12-02 Improvements in semi-conductor devices
GB39460 1960-02-19

Publications (1)

Publication Number Publication Date
GB936203A true GB936203A (en) 1963-09-04

Family

ID=26235890

Family Applications (1)

Application Number Title Priority Date Filing Date
GB39463A Expired GB936203A (en) 1958-12-02 1960-02-19 Improvements in semi-conductor devices

Country Status (1)

Country Link
GB (1) GB936203A (en)

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