GB932976A - A method of etching a tunnel diode - Google Patents

A method of etching a tunnel diode

Info

Publication number
GB932976A
GB932976A GB20461/61A GB2046161A GB932976A GB 932976 A GB932976 A GB 932976A GB 20461/61 A GB20461/61 A GB 20461/61A GB 2046161 A GB2046161 A GB 2046161A GB 932976 A GB932976 A GB 932976A
Authority
GB
United Kingdom
Prior art keywords
etching
diode
june
currents
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20461/61A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB932976A publication Critical patent/GB932976A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • ing And Chemical Polishing (AREA)
GB20461/61A 1960-05-18 1961-06-06 A method of etching a tunnel diode Expired GB932976A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2736960 1960-05-18

Publications (1)

Publication Number Publication Date
GB932976A true GB932976A (en) 1963-07-31

Family

ID=12219118

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20461/61A Expired GB932976A (en) 1960-05-18 1961-06-06 A method of etching a tunnel diode

Country Status (4)

Country Link
US (1) US3250693A (https=)
DE (2) DE1261965B (https=)
GB (1) GB932976A (https=)
NL (2) NL133499C (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3377263A (en) * 1964-09-14 1968-04-09 Philco Ford Corp Electrical system for etching a tunnel diode
US3408275A (en) * 1966-12-09 1968-10-29 Siemens Ag Tunnel diodes wherein the height of the reduced cross section of the mesa is minimized and process of making
US3697873A (en) * 1969-05-28 1972-10-10 Westinghouse Electric Corp Method for determining excess carrier lifetime in semiconductor devices
JPS4828958B1 (https=) * 1969-07-22 1973-09-06
US4028207A (en) * 1975-05-16 1977-06-07 The Post Office Measuring arrangements
US4462871A (en) * 1982-04-06 1984-07-31 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Epitaxial thinning process

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2505370A (en) * 1947-11-08 1950-04-25 Bell Telephone Labor Inc Piezoelectric crystal unit
US2886496A (en) * 1950-03-29 1959-05-12 Leeds & Northrup Co Method of determining concentration of dissolved substance
US2765765A (en) * 1952-09-03 1956-10-09 Robert R Bigler Apparatus for the manufacture of piezoelectric crystals
GB761795A (en) * 1954-03-09 1956-11-21 Gen Electric Co Ltd Improvements in or relating to the manufacture of semi-conductor devices
US2940024A (en) * 1954-06-01 1960-06-07 Rca Corp Semi-conductor rectifiers
US3023153A (en) * 1954-06-01 1962-02-27 Rca Corp Method of etching semi-conductor bodies
US2850444A (en) * 1954-11-01 1958-09-02 Rca Corp Pulse method of etching semiconductor junction devices
US3075902A (en) * 1956-03-30 1963-01-29 Philco Corp Jet-electrolytic etching and measuring method
NL106110C (https=) * 1956-08-24
US2979444A (en) * 1957-07-16 1961-04-11 Philco Corp Electrochemical method and apparatus therefor
US2975342A (en) * 1957-08-16 1961-03-14 Research Corp Narrow base planar junction punch-thru diode
US3033714A (en) * 1957-09-28 1962-05-08 Sony Corp Diode type semiconductor device
US2963411A (en) * 1957-12-24 1960-12-06 Ibm Process for removing shorts from p-n junctions
US3117899A (en) * 1960-07-18 1964-01-14 Westinghouse Electric Corp Process for making semiconductor devices
US3110849A (en) * 1960-10-03 1963-11-12 Gen Electric Tunnel diode device

Also Published As

Publication number Publication date
US3250693A (en) 1966-05-10
NL265468A (https=)
NL133499C (https=)
DE1261965C2 (de) 1973-11-22
DE1261965B (de) 1968-02-29

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