GB932349A - A process for the surface treatment of semi-conductor material - Google Patents
A process for the surface treatment of semi-conductor materialInfo
- Publication number
- GB932349A GB932349A GB314162A GB314162A GB932349A GB 932349 A GB932349 A GB 932349A GB 314162 A GB314162 A GB 314162A GB 314162 A GB314162 A GB 314162A GB 932349 A GB932349 A GB 932349A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- exposed
- vapour
- etched
- disc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004381 surface treatment Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Abstract
932,349. Surface treatment of PN junction rectifiers. SIEMENS-SCHUCKERTWERKE A.G. Jan. 26, 1962 [Jan. 27, 1961 (2)], No. 3141/62. Class 37. The exposed surface of a PN junction in a semi-conductor device is etched and then exposed to the vapour formed above a liquid consisting of nitric acid and hydrofluoric acid until a thin layer is formed over the exposed portion of the junction the thickness of the layer being such that it exhibits the colour of a thin plate. In the described embodiment a P-type silicon disc has an ohmic electrode comprising a gold foil disc containing 0.3% boron alloyed to one face and a PN junction formed by a gold foil disc containing 0.5% antimony alloyed to the other face, the alloying taking place whilst the assembly of discs is embedded under pressure in an inert powder. The PN junction is then etched, e.g. on an etching centrifuge in which the disc is rotated about its axis of symmetry whilst it is sprayed with etchant, after which the device is rinsed in water and exposed to the vapour of a nitric and hydrofluoric acid mixture. If desired the rectifier element may then be tempered for 24 hours at 200-300� C. then again etched and exposed to the vapour.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES72236A DE1192903B (en) | 1961-01-27 | 1961-01-27 | Process for stabilizing the blocking properties of semiconductor arrangements achieved by etching |
| DES72235A DE1193766B (en) | 1961-01-27 | 1961-01-27 | Process for stabilizing the blocking properties of semiconductor arrangements achieved by etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB932349A true GB932349A (en) | 1963-07-24 |
Family
ID=25996321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB314162A Expired GB932349A (en) | 1961-01-27 | 1962-01-26 | A process for the surface treatment of semi-conductor material |
Country Status (3)
| Country | Link |
|---|---|
| CH (1) | CH385352A (en) |
| DE (1) | DE1192903B (en) |
| GB (1) | GB932349A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1026037C1 (en) | 2004-04-26 | 2005-10-27 | Petrus Johannes Wilhelmus Herp | Extractor unit for a toilet bowl. |
-
1961
- 1961-01-27 DE DES72236A patent/DE1192903B/en active Pending
- 1961-08-02 CH CH907461A patent/CH385352A/en unknown
-
1962
- 1962-01-26 GB GB314162A patent/GB932349A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH385352A (en) | 1964-12-15 |
| DE1192903B (en) | 1965-05-13 |
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