GB924858A - Improvements in and relating to semi-conductor materials - Google Patents

Improvements in and relating to semi-conductor materials

Info

Publication number
GB924858A
GB924858A GB2600960A GB2600960A GB924858A GB 924858 A GB924858 A GB 924858A GB 2600960 A GB2600960 A GB 2600960A GB 2600960 A GB2600960 A GB 2600960A GB 924858 A GB924858 A GB 924858A
Authority
GB
United Kingdom
Prior art keywords
wires
grid
semi
sources
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2600960A
Inventor
Ralph Edgar Warren
Norman Joseph Crocker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB2600960A priority Critical patent/GB924858A/en
Priority to FR869115A priority patent/FR1296238A/en
Publication of GB924858A publication Critical patent/GB924858A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

924,858. Coating by vapour deposition. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. May 5, 1961 [July 26, 1960], No. 26009/60. Class 82. [Also in Group XXXVI] Two activator materials are evaporated On to spaced apart portions of a semi-conductor body through a grid of parallel wires in contact with the surface of the body. The sources of the two materials are disposed one on each side of the axis of the wires outside the projected area normal to the surface of the grid and any extension thereof in the longitudinal direction of the wires. A plurality of mesa transistors are made from a suitably doped germanium wafer 1 by evaporating aluminium and gold-antimony alloy successively from sources B and A respectively through a grid of closely spaced parallel wires 2 to form parallel emitter and base strips which are then alloyed to the wafer.
GB2600960A 1960-07-26 1960-07-26 Improvements in and relating to semi-conductor materials Expired GB924858A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB2600960A GB924858A (en) 1960-07-26 1960-07-26 Improvements in and relating to semi-conductor materials
FR869115A FR1296238A (en) 1960-07-26 1961-07-26 Deposition of thin layers of substances on specific parts of a semiconductor body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2600960A GB924858A (en) 1960-07-26 1960-07-26 Improvements in and relating to semi-conductor materials

Publications (1)

Publication Number Publication Date
GB924858A true GB924858A (en) 1963-05-01

Family

ID=10236916

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2600960A Expired GB924858A (en) 1960-07-26 1960-07-26 Improvements in and relating to semi-conductor materials

Country Status (1)

Country Link
GB (1) GB924858A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3326718A (en) * 1963-12-30 1967-06-20 Hughes Aircraft Co Method for making an electrical capacitor
WO1997039159A1 (en) * 1996-04-12 1997-10-23 The University Of Reading Coated substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3326718A (en) * 1963-12-30 1967-06-20 Hughes Aircraft Co Method for making an electrical capacitor
WO1997039159A1 (en) * 1996-04-12 1997-10-23 The University Of Reading Coated substrate

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