GB916671A - Improvements in or relating to methods of alloying electrodes to semi-conductor bodies - Google Patents

Improvements in or relating to methods of alloying electrodes to semi-conductor bodies

Info

Publication number
GB916671A
GB916671A GB3596859A GB3596859A GB916671A GB 916671 A GB916671 A GB 916671A GB 3596859 A GB3596859 A GB 3596859A GB 3596859 A GB3596859 A GB 3596859A GB 916671 A GB916671 A GB 916671A
Authority
GB
United Kingdom
Prior art keywords
semi
liquid
conductor
pool
pellet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3596859A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB916671A publication Critical patent/GB916671A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thyristors (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Conductive Materials (AREA)
  • Cell Electrode Carriers And Collectors (AREA)
GB3596859A 1958-10-24 1959-10-23 Improvements in or relating to methods of alloying electrodes to semi-conductor bodies Expired GB916671A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES60369A DE1132404B (de) 1958-10-24 1958-10-24 Verfahren zum Herstellen eines pn-UEbergangs in einem Koerper aus Halbleitergrundstoff durch Einlegieren einer Pille eines Dotierungsmetalls
DES60606A DE1197178B (de) 1958-10-24 1958-11-14 Verfahren zum Herstellen eines pn-UEbergangs in einem Halbleiterkoerper

Publications (1)

Publication Number Publication Date
GB916671A true GB916671A (en) 1963-01-23

Family

ID=25995589

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3596859A Expired GB916671A (en) 1958-10-24 1959-10-23 Improvements in or relating to methods of alloying electrodes to semi-conductor bodies

Country Status (5)

Country Link
CH (1) CH383719A (enrdf_load_stackoverflow)
DE (2) DE1132404B (enrdf_load_stackoverflow)
FR (1) FR1237641A (enrdf_load_stackoverflow)
GB (1) GB916671A (enrdf_load_stackoverflow)
NL (1) NL244622A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL244622A (enrdf_load_stackoverflow) 1958-10-24

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE485103C (de) * 1926-08-20 1931-06-12 Siemens & Halske Akt Ges Verfahren zur Herstellung von UEberzuegen aus Beryllium auf Metallen oder Legierungen
DE1052575B (de) 1954-06-23 1959-03-12 Siemens Ag Verfahren zur Herstellung von Kontaktierungen auf Halbleiterkoerpern fuer Halbleiteranordnungen
BE546819A (enrdf_load_stackoverflow) * 1955-01-11
GB775616A (en) * 1955-04-15 1957-05-29 Sylvania Electric Prod Processing of alloy junction devices
NL244622A (enrdf_load_stackoverflow) 1958-10-24

Also Published As

Publication number Publication date
FR1237641A (fr) 1960-11-25
CH383719A (de) 1964-10-31
DE1197178B (de) 1965-07-22
DE1132404B (de) 1962-06-28
NL244622A (enrdf_load_stackoverflow)

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