GB889872A - A method of treating a semi-conductor device - Google Patents
A method of treating a semi-conductor deviceInfo
- Publication number
- GB889872A GB889872A GB7135/58A GB713558A GB889872A GB 889872 A GB889872 A GB 889872A GB 7135/58 A GB7135/58 A GB 7135/58A GB 713558 A GB713558 A GB 713558A GB 889872 A GB889872 A GB 889872A
- Authority
- GB
- United Kingdom
- Prior art keywords
- sodium
- aqueous solution
- junction
- wetting agent
- solutions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Detergent Compositions (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
889,872. Semi-conductor treatment. SARKES TARZIAN Inc. March 5, 1958 [April 24, 1957], No. 7135/58. Drawings to Specification. Class 37. A method of treating the exposed boundary of a PN junction in a semi-conductor to improve reverse current resistivity, comprises immersing the junction in a dilute aqueous solution of an inorganic material, alkaline or basic in nature, containing a wetting agent. The treatment is preferably carried out at the boiling temperature of the aqueous solution, at which temperature the reaction is complete in a minute or less. Lower temperatures may be used if extended time is allowed. Solutions referred to include those of basic salts such as sodium carbonate, sodium bicarbonate, potassium carbonate, sodium acetate, sodium metasilicate, and other salts of alkaline earth and alkali metals which in dilute solutions (i.e. concentrations of 1 to 15%) produce aqueous solutions having pH values of 10-12 or higher. Dilute solutions of sodium or potassium hydroxide are also said to be satisfactory. The solution should also contain from ¢ to 3% of a wetting agent such as trisodium phosphate or an alkali metal salt of a detergent sulfonate or a non.-ionic wetting agent such as polyoxyethylene derivatives of hexitol anhydride or long chain fatty acid partial esters of hexitol anhydride. Examples quoted. Silicon plates with a dot of an alloy of aluminium, tin and gallium fused to the surface to form a PN junction are etched in caustic soda, and then in nitric acid, washed and then treated by immersion, either for 3 seconds in a boiling aqueous solution containing 15% by weight of sodium carbonate and 1% of sodium triphosphate, or for 30 seconds in a 2% aqueous solution of sodium hydroxide with 0.5% of polyethylene polypropylene oxide at 60‹ C., the junctions so treated are then washed in pure water and dried at 150‹ C.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US889872XA | 1957-04-24 | 1957-04-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB889872A true GB889872A (en) | 1962-02-21 |
Family
ID=22214675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7135/58A Expired GB889872A (en) | 1957-04-24 | 1958-03-05 | A method of treating a semi-conductor device |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1117221B (en) |
| FR (1) | FR1194858A (en) |
| GB (1) | GB889872A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2214197C3 (en) * | 1972-03-23 | 1982-01-14 | Siemens AG, 1000 Berlin und 8000 München | Process for etching semiconductor wafers containing PN junctions |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2740699A (en) * | 1949-07-23 | 1956-04-03 | Sylvania Electric Prod | Surface processing |
| US2656496A (en) * | 1951-07-31 | 1953-10-20 | Bell Telephone Labor Inc | Semiconductor translating device |
| GB774388A (en) * | 1954-01-28 | 1957-05-08 | Marconi Wireless Telegraph Co | Improvements in or relating to semi-conducting amplifiers |
-
1958
- 1958-03-05 GB GB7135/58A patent/GB889872A/en not_active Expired
- 1958-04-12 DE DES57820A patent/DE1117221B/en active Pending
- 1958-04-18 FR FR1194858D patent/FR1194858A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1117221B (en) | 1961-11-16 |
| FR1194858A (en) | 1959-11-13 |
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