GB886340A - Improvements in or relating to transistors - Google Patents

Improvements in or relating to transistors

Info

Publication number
GB886340A
GB886340A GB32748/60A GB3274860A GB886340A GB 886340 A GB886340 A GB 886340A GB 32748/60 A GB32748/60 A GB 32748/60A GB 3274860 A GB3274860 A GB 3274860A GB 886340 A GB886340 A GB 886340A
Authority
GB
United Kingdom
Prior art keywords
emitter
collector electrodes
semi
base
alloying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB32748/60A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB886340A publication Critical patent/GB886340A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
GB32748/60A 1959-09-25 1960-09-23 Improvements in or relating to transistors Expired GB886340A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES65125A DE1110765B (de) 1959-09-25 1959-09-25 Legierungstransistor zum Schalten mit einem scheibenfoermigen n- oder p-dotierten Halbleiterkoerper

Publications (1)

Publication Number Publication Date
GB886340A true GB886340A (en) 1962-01-03

Family

ID=7497783

Family Applications (1)

Application Number Title Priority Date Filing Date
GB32748/60A Expired GB886340A (en) 1959-09-25 1960-09-23 Improvements in or relating to transistors

Country Status (4)

Country Link
CH (1) CH411137A (enrdf_load_stackoverflow)
DE (1) DE1110765B (enrdf_load_stackoverflow)
GB (1) GB886340A (enrdf_load_stackoverflow)
NL (1) NL255627A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1182752B (de) * 1961-08-26 1964-12-03 Telefunken Patent Drifttransistor
DE1206080B (de) * 1964-08-20 1965-12-02 Telefunken Patent Transistormagnetfeldsonde hoher Empfindlichkeit
DE1489087B1 (de) * 1964-10-24 1970-09-03 Licentia Gmbh Halbleiterbauelement mit verbessertem Frequenzverhalten und Verfahren zum Herstellen

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2860218A (en) * 1954-02-04 1958-11-11 Gen Electric Germanium current controlling devices
DE1012696B (de) * 1954-07-06 1957-07-25 Siemens Ag Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges
DK91082C (da) * 1955-11-01 1961-06-12 Philips Nv Halvlederorgan, f. eks. krystaldiode eller transistor, samt fremgangsmåder til fremstilling af et sådant organ.

Also Published As

Publication number Publication date
DE1110765B (de) 1961-07-13
NL255627A (enrdf_load_stackoverflow)
CH411137A (de) 1966-04-15

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