GB886340A - Improvements in or relating to transistors - Google Patents
Improvements in or relating to transistorsInfo
- Publication number
- GB886340A GB886340A GB32748/60A GB3274860A GB886340A GB 886340 A GB886340 A GB 886340A GB 32748/60 A GB32748/60 A GB 32748/60A GB 3274860 A GB3274860 A GB 3274860A GB 886340 A GB886340 A GB 886340A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitter
- collector electrodes
- semi
- base
- alloying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005275 alloying Methods 0.000 abstract 3
- 238000005215 recombination Methods 0.000 abstract 3
- 230000006798 recombination Effects 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910000807 Ga alloy Inorganic materials 0.000 abstract 1
- 229910001245 Sb alloy Inorganic materials 0.000 abstract 1
- 239000002140 antimony alloy Substances 0.000 abstract 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 238000009827 uniform distribution Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES65125A DE1110765B (de) | 1959-09-25 | 1959-09-25 | Legierungstransistor zum Schalten mit einem scheibenfoermigen n- oder p-dotierten Halbleiterkoerper |
Publications (1)
Publication Number | Publication Date |
---|---|
GB886340A true GB886340A (en) | 1962-01-03 |
Family
ID=7497783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB32748/60A Expired GB886340A (en) | 1959-09-25 | 1960-09-23 | Improvements in or relating to transistors |
Country Status (4)
Country | Link |
---|---|
CH (1) | CH411137A (enrdf_load_stackoverflow) |
DE (1) | DE1110765B (enrdf_load_stackoverflow) |
GB (1) | GB886340A (enrdf_load_stackoverflow) |
NL (1) | NL255627A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1182752B (de) * | 1961-08-26 | 1964-12-03 | Telefunken Patent | Drifttransistor |
DE1206080B (de) * | 1964-08-20 | 1965-12-02 | Telefunken Patent | Transistormagnetfeldsonde hoher Empfindlichkeit |
DE1489087B1 (de) * | 1964-10-24 | 1970-09-03 | Licentia Gmbh | Halbleiterbauelement mit verbessertem Frequenzverhalten und Verfahren zum Herstellen |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2860218A (en) * | 1954-02-04 | 1958-11-11 | Gen Electric | Germanium current controlling devices |
DE1012696B (de) * | 1954-07-06 | 1957-07-25 | Siemens Ag | Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges |
DK91082C (da) * | 1955-11-01 | 1961-06-12 | Philips Nv | Halvlederorgan, f. eks. krystaldiode eller transistor, samt fremgangsmåder til fremstilling af et sådant organ. |
-
0
- NL NL255627D patent/NL255627A/xx unknown
-
1959
- 1959-09-25 DE DES65125A patent/DE1110765B/de active Pending
-
1960
- 1960-09-08 CH CH1016360A patent/CH411137A/de unknown
- 1960-09-23 GB GB32748/60A patent/GB886340A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1110765B (de) | 1961-07-13 |
NL255627A (enrdf_load_stackoverflow) | |
CH411137A (de) | 1966-04-15 |
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