GB886340A - Improvements in or relating to transistors - Google Patents

Improvements in or relating to transistors

Info

Publication number
GB886340A
GB886340A GB3274860A GB3274860A GB886340A GB 886340 A GB886340 A GB 886340A GB 3274860 A GB3274860 A GB 3274860A GB 3274860 A GB3274860 A GB 3274860A GB 886340 A GB886340 A GB 886340A
Authority
GB
United Kingdom
Prior art keywords
emitter
collector electrodes
semi
base
alloying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3274860A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB886340A publication Critical patent/GB886340A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

886,340. Transistors. SIEMENS & HALSKE A.G. Sept. 23, 1960 [Sept. 25, 1959], No. 32748/60. Class 37. A transistor comprises a semi-conductor body with alloyed emitter and collector electrodes on respective parts of opposite surfaces, the carrier lifetime of the material being longer in the base region between the emitter and collector electrodes than in portions remote from this region. This may be achieved as shown in Fig. 1 by alloying a copper or nickel annular base electrode 2 to the periphery of the semi-conductor body 1 to provide recombination centres in that portion of the base zone adjacent the base electrode. Emitter 3 and collector 4 are provided by alloying indium to the N-type germanium body 1. Alternatively, the whole semi-conductor body may first be provided with a uniform distribution of recombination centres produced by a suitable impurity and the material and alloying process used to provide the emitter and collector electrodes being such that the recombination centre forming impurity is absorbed from the body into the metallic portion of the electrode so providing a longer lifetime region between these two electrodes. The emitter and collector electrodes may be provided by an indium-gallium alloy or a tin-antimony alloy used with P-type germanium. The invention reduces the relaxation time in switching operations. The thickness of the base layer may be 10 to 50 Á.
GB3274860A 1959-09-25 1960-09-23 Improvements in or relating to transistors Expired GB886340A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES65125A DE1110765B (en) 1959-09-25 1959-09-25 Alloy transistor for switching with a disk-shaped n- or p-doped semiconductor body

Publications (1)

Publication Number Publication Date
GB886340A true GB886340A (en) 1962-01-03

Family

ID=7497783

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3274860A Expired GB886340A (en) 1959-09-25 1960-09-23 Improvements in or relating to transistors

Country Status (4)

Country Link
CH (1) CH411137A (en)
DE (1) DE1110765B (en)
GB (1) GB886340A (en)
NL (1) NL255627A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1182752B (en) * 1961-08-26 1964-12-03 Telefunken Patent Drift transistor
DE1206080B (en) * 1964-08-20 1965-12-02 Telefunken Patent High sensitivity transistor magnetic field probe
DE1489087B1 (en) * 1964-10-24 1970-09-03 Licentia Gmbh Semiconductor component with improved frequency behavior and method for manufacturing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2860218A (en) * 1954-02-04 1958-11-11 Gen Electric Germanium current controlling devices
DE1012696B (en) * 1954-07-06 1957-07-25 Siemens Ag Semiconductor transition between zones of different conduction types and process for producing the transition
DK91082C (en) * 1955-11-01 1961-06-12 Philips Nv Semiconductor means, for example crystal diode or transistor, and methods for manufacturing such means.

Also Published As

Publication number Publication date
DE1110765B (en) 1961-07-13
CH411137A (en) 1966-04-15
NL255627A (en)

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