CH411137A - Alloy transistor, especially switching transistor - Google Patents
Alloy transistor, especially switching transistorInfo
- Publication number
- CH411137A CH411137A CH1016360A CH1016360A CH411137A CH 411137 A CH411137 A CH 411137A CH 1016360 A CH1016360 A CH 1016360A CH 1016360 A CH1016360 A CH 1016360A CH 411137 A CH411137 A CH 411137A
- Authority
- CH
- Switzerland
- Prior art keywords
- transistor
- alloy
- especially switching
- switching transistor
- alloy transistor
- Prior art date
Links
- 239000000956 alloy Substances 0.000 title 1
- 229910045601 alloy Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES65125A DE1110765B (en) | 1959-09-25 | 1959-09-25 | Alloy transistor for switching with a disk-shaped n- or p-doped semiconductor body |
Publications (1)
Publication Number | Publication Date |
---|---|
CH411137A true CH411137A (en) | 1966-04-15 |
Family
ID=7497783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1016360A CH411137A (en) | 1959-09-25 | 1960-09-08 | Alloy transistor, especially switching transistor |
Country Status (4)
Country | Link |
---|---|
CH (1) | CH411137A (en) |
DE (1) | DE1110765B (en) |
GB (1) | GB886340A (en) |
NL (1) | NL255627A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1182752B (en) * | 1961-08-26 | 1964-12-03 | Telefunken Patent | Drift transistor |
DE1206080B (en) * | 1964-08-20 | 1965-12-02 | Telefunken Patent | High sensitivity transistor magnetic field probe |
DE1489087B1 (en) * | 1964-10-24 | 1970-09-03 | Licentia Gmbh | Semiconductor component with improved frequency behavior and method for manufacturing |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2860218A (en) * | 1954-02-04 | 1958-11-11 | Gen Electric | Germanium current controlling devices |
DE1012696B (en) * | 1954-07-06 | 1957-07-25 | Siemens Ag | Semiconductor transition between zones of different conduction types and process for producing the transition |
DK91082C (en) * | 1955-11-01 | 1961-06-12 | Philips Nv | Semiconductor means, for example crystal diode or transistor, and methods for manufacturing such means. |
-
0
- NL NL255627D patent/NL255627A/xx unknown
-
1959
- 1959-09-25 DE DES65125A patent/DE1110765B/en active Pending
-
1960
- 1960-09-08 CH CH1016360A patent/CH411137A/en unknown
- 1960-09-23 GB GB3274860A patent/GB886340A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL255627A (en) | |
DE1110765B (en) | 1961-07-13 |
GB886340A (en) | 1962-01-03 |
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