GB8819669D0 - Improvements in integrated circuits - Google Patents

Improvements in integrated circuits

Info

Publication number
GB8819669D0
GB8819669D0 GB8819669A GB8819669A GB8819669D0 GB 8819669 D0 GB8819669 D0 GB 8819669D0 GB 8819669 A GB8819669 A GB 8819669A GB 8819669 A GB8819669 A GB 8819669A GB 8819669 D0 GB8819669 D0 GB 8819669D0
Authority
GB
United Kingdom
Prior art keywords
integrated circuits
circuits
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB8819669A
Other versions
GB2222024A (en
GB2222024B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
STC PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STC PLC filed Critical STC PLC
Priority to GB8819669A priority Critical patent/GB2222024B/en
Publication of GB8819669D0 publication Critical patent/GB8819669D0/en
Publication of GB2222024A publication Critical patent/GB2222024A/en
Application granted granted Critical
Publication of GB2222024B publication Critical patent/GB2222024B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
GB8819669A 1988-08-18 1988-08-18 Improvements in integrated circuits Expired - Fee Related GB2222024B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8819669A GB2222024B (en) 1988-08-18 1988-08-18 Improvements in integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8819669A GB2222024B (en) 1988-08-18 1988-08-18 Improvements in integrated circuits

Publications (3)

Publication Number Publication Date
GB8819669D0 true GB8819669D0 (en) 1988-09-21
GB2222024A GB2222024A (en) 1990-02-21
GB2222024B GB2222024B (en) 1992-02-19

Family

ID=10642358

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8819669A Expired - Fee Related GB2222024B (en) 1988-08-18 1988-08-18 Improvements in integrated circuits

Country Status (1)

Country Link
GB (1) GB2222024B (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272101A (en) * 1990-04-12 1993-12-21 Actel Corporation Electrically programmable antifuse and fabrication processes
US5552627A (en) * 1990-04-12 1996-09-03 Actel Corporation Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers
US5130777A (en) * 1991-01-04 1992-07-14 Actel Corporation Apparatus for improving antifuse programming yield and reducing antifuse programming time
EP0558176A1 (en) * 1992-02-26 1993-09-01 Actel Corporation Metal-to-metal antifuse with improved diffusion barrier layer
EP0564138A1 (en) * 1992-03-31 1993-10-06 STMicroelectronics, Inc. Field programmable device
WO1994007266A1 (en) * 1992-09-23 1994-03-31 Massachusetts Institute Of Technology A voltage programmable link having reduced capacitance
US5308795A (en) * 1992-11-04 1994-05-03 Actel Corporation Above via metal-to-metal antifuse
US5581111A (en) 1993-07-07 1996-12-03 Actel Corporation Dielectric-polysilicon-dielectric antifuse for field programmable logic applications
US5498895A (en) * 1993-07-07 1996-03-12 Actel Corporation Process ESD protection devices for use with antifuses
US5369054A (en) * 1993-07-07 1994-11-29 Actel Corporation Circuits for ESD protection of metal-to-metal antifuses during processing
US5856234A (en) * 1993-09-14 1999-01-05 Actel Corporation Method of fabricating an antifuse
US5485031A (en) 1993-11-22 1996-01-16 Actel Corporation Antifuse structure suitable for VLSI application
US5543344A (en) * 1994-10-05 1996-08-06 United Microelectronics Corp. Method of making programmable read-only memory
US5592016A (en) * 1995-04-14 1997-01-07 Actel Corporation Antifuse with improved antifuse material
JP3027195B2 (en) * 1995-06-02 2000-03-27 アクテル・コーポレイション Raised tungsten plug antifuse and method of manufacturing the same
US5986322A (en) * 1995-06-06 1999-11-16 Mccollum; John L. Reduced leakage antifuse structure
US5741720A (en) 1995-10-04 1998-04-21 Actel Corporation Method of programming an improved metal-to-metal via-type antifuse
WO1998036453A1 (en) * 1997-02-14 1998-08-20 Gennum Corporation Antifuse based on silicided polysilicon bipolar transistor
US6218722B1 (en) 1997-02-14 2001-04-17 Gennum Corporation Antifuse based on silicided polysilicon bipolar transistor
US5920771A (en) * 1997-03-17 1999-07-06 Gennum Corporation Method of making antifuse based on silicided single polysilicon bipolar transistor
US6627970B2 (en) * 2000-12-20 2003-09-30 Infineon Technologies Ag Integrated semiconductor circuit, in particular a semiconductor memory circuit, having at least one integrated electrical antifuse structure, and a method of producing the structure

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2134172B1 (en) * 1971-04-23 1977-03-18 Radiotechnique Compelec
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit
US4404581A (en) * 1980-12-15 1983-09-13 Rockwell International Corporation ROM With redundant ROM cells employing a highly resistive polysilicon film for programming the cells
EP0065916B1 (en) * 1981-05-15 1988-10-12 Fairchild Semiconductor Corporation Schottky diode - polycrystalline silicon resistor memory cell
US4569120A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation
JPH0666433B2 (en) * 1984-02-09 1994-08-24 エヌ・シー・アール・インターナショナル・インコーポレイテッド Electrically programmable read-only memory cell
US4748490A (en) * 1985-08-01 1988-05-31 Texas Instruments Incorporated Deep polysilicon emitter antifuse memory cell
US4823181A (en) * 1986-05-09 1989-04-18 Actel Corporation Programmable low impedance anti-fuse element

Also Published As

Publication number Publication date
GB2222024A (en) 1990-02-21
GB2222024B (en) 1992-02-19

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20040818