GB877421A - Improvements in crystal diodes - Google Patents

Improvements in crystal diodes

Info

Publication number
GB877421A
GB877421A GB13395/58A GB1339558A GB877421A GB 877421 A GB877421 A GB 877421A GB 13395/58 A GB13395/58 A GB 13395/58A GB 1339558 A GB1339558 A GB 1339558A GB 877421 A GB877421 A GB 877421A
Authority
GB
United Kingdom
Prior art keywords
envelope
diode
resistance
insulating material
resistive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13395/58A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB877421A publication Critical patent/GB877421A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • E—FIXED CONSTRUCTIONS
    • E21—EARTH DRILLING; MINING
    • E21C—MINING OR QUARRYING
    • E21C27/00—Machines which completely free the mineral from the seam
    • E21C27/02—Machines which completely free the mineral from the seam solely by slitting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/647—Resistive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Abstract

877,421. Crystal diodes; assemblies of components. PHILIPS ELECTRICAL INDUSTRIES Ltd. April 28, 1958 [May 1, 1957], No. 13395/58. Class 37. A diode in a vacuum-tight envelope is provided with a shunt resistor on or in the envelope itself so as to equalize the back voltage across each of a number of the diodes connected in series. The resistance may take the form as shown in Fig. 1 of a resistive layer 13 across the insulator 10 forming part of the envelope of the diode comprising N-type germanium plate 7 and indium electrode 8, the remainder of the envelope being formed by metallic base 1 and cover 2. In the embodiment shown in Fig. 2 the resistive layer 22 is formed over the surface of an insulating material 21 in which the diode similar to that in Fig. 1 is embedded. In Fig. 3 the insulating material incorporated in the envelope to isolate the connections to the diode forms the resistance either by virtue of a slight conductivity imparted to the material itself e.g. by the addition of carbon to a ceramic material, or by a resistance layer on the surface.
GB13395/58A 1957-05-01 1958-04-28 Improvements in crystal diodes Expired GB877421A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL877421X 1957-05-01

Publications (1)

Publication Number Publication Date
GB877421A true GB877421A (en) 1961-09-13

Family

ID=19851446

Family Applications (1)

Application Number Title Priority Date Filing Date
GB13395/58A Expired GB877421A (en) 1957-05-01 1958-04-28 Improvements in crystal diodes

Country Status (5)

Country Link
BE (2) BE567249A (en)
DE (1) DE1047318B (en)
FR (1) FR1195186A (en)
GB (1) GB877421A (en)
NL (3) NL216859A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1104069B (en) * 1958-12-27 1961-04-06 Siemens Reiniger Werke Ag High voltage rectifier unit with silicon rectifiers
NL251302A (en) * 1959-05-06
NL258753A (en) * 1959-12-07
DE1238102B (en) * 1960-01-20 1967-04-06 Nippon Electric Co Semiconductor rectifier
DE1197413B (en) * 1964-02-01 1965-07-29 Eickhoff Geb Extraction machine that can be moved on a longwall mining means with a cutting roller rotating around a vertical axis
DE1208265B (en) * 1964-06-30 1966-01-05 Gorlowskij Mash Sawod Im Kirow Schreem loading roller for mining Schreemlademaschinen
DE3137408A1 (en) * 1981-09-19 1983-04-07 BBC Aktiengesellschaft Brown, Boveri & Cie., 5401 Baden, Aargau PERFORMANCE SEMICONDUCTOR COMPONENT FOR BOILER COOLING OR LIQUID COOLING
CH647619A5 (en) * 1983-02-28 1985-01-31 Bbc Brown Boveri & Cie Power semiconductor valve

Also Published As

Publication number Publication date
BE567246A (en)
DE1047318B (en) 1958-12-24
NL208177A (en)
BE567249A (en)
NL108177C (en)
NL216859A (en)
FR1195186A (en) 1959-11-16

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