GB8729622D0 - Dynamic random access memory with selective well biasing - Google Patents

Dynamic random access memory with selective well biasing

Info

Publication number
GB8729622D0
GB8729622D0 GB878729622A GB8729622A GB8729622D0 GB 8729622 D0 GB8729622 D0 GB 8729622D0 GB 878729622 A GB878729622 A GB 878729622A GB 8729622 A GB8729622 A GB 8729622A GB 8729622 D0 GB8729622 D0 GB 8729622D0
Authority
GB
United Kingdom
Prior art keywords
random access
access memory
dynamic random
well biasing
selective well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB878729622A
Other versions
GB2199695A (en
GB2199695B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Semiconductor Inc
Original Assignee
Samsung Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Semiconductor Inc filed Critical Samsung Semiconductor Inc
Publication of GB8729622D0 publication Critical patent/GB8729622D0/en
Publication of GB2199695A publication Critical patent/GB2199695A/en
Application granted granted Critical
Publication of GB2199695B publication Critical patent/GB2199695B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB8729622A 1987-01-06 1987-12-18 Dynamic random access memory with selective well biasing Expired - Fee Related GB2199695B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74787A 1987-01-06 1987-01-06

Publications (3)

Publication Number Publication Date
GB8729622D0 true GB8729622D0 (en) 1988-02-03
GB2199695A GB2199695A (en) 1988-07-13
GB2199695B GB2199695B (en) 1990-07-25

Family

ID=21692854

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8729622A Expired - Fee Related GB2199695B (en) 1987-01-06 1987-12-18 Dynamic random access memory with selective well biasing

Country Status (5)

Country Link
KR (1) KR880009440A (en)
DE (1) DE3744376A1 (en)
FR (1) FR2609351A1 (en)
GB (1) GB2199695B (en)
NL (1) NL8800008A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910000246B1 (en) * 1988-02-15 1991-01-23 삼성전자 주식회사 Semiconductor memory device
KR930006144B1 (en) * 1990-07-12 1993-07-07 삼성전자 주식회사 Semiconductor device and manufacturing method thereof
KR930001392A (en) * 1991-06-19 1993-01-16 김광호 Power Ground Wire Wiring Method for Semiconductor Memory Device
US5264716A (en) * 1992-01-09 1993-11-23 International Business Machines Corporation Diffused buried plate trench dram cell array
DE69229717T2 (en) * 1992-01-09 2000-03-02 Ibm Trench DRAM cell matrix
JP2904635B2 (en) * 1992-03-30 1999-06-14 株式会社東芝 Semiconductor device and manufacturing method thereof
US5595925A (en) * 1994-04-29 1997-01-21 Texas Instruments Incorporated Method for fabricating a multiple well structure for providing multiple substrate bias for DRAM device formed therein
US7005338B2 (en) 2002-09-19 2006-02-28 Promos Technologies Inc. Nonvolatile memory cell with a floating gate at least partially located in a trench in a semiconductor substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192064A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Semiconductor integrated circuit
JPS57194565A (en) * 1981-05-25 1982-11-30 Toshiba Corp Semiconductor memory device
JPH0671067B2 (en) * 1985-11-20 1994-09-07 株式会社日立製作所 Semiconductor device

Also Published As

Publication number Publication date
NL8800008A (en) 1988-08-01
GB2199695A (en) 1988-07-13
DE3744376A1 (en) 1988-07-14
GB2199695B (en) 1990-07-25
FR2609351A1 (en) 1988-07-08
KR880009440A (en) 1988-09-15

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee