GB8705468D0 - Manufacture of electronic devices - Google Patents

Manufacture of electronic devices

Info

Publication number
GB8705468D0
GB8705468D0 GB878705468A GB8705468A GB8705468D0 GB 8705468 D0 GB8705468 D0 GB 8705468D0 GB 878705468 A GB878705468 A GB 878705468A GB 8705468 A GB8705468 A GB 8705468A GB 8705468 D0 GB8705468 D0 GB 8705468D0
Authority
GB
United Kingdom
Prior art keywords
manufacture
electronic devices
electronic
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB878705468A
Other versions
GB2202236A (en
GB2202236B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Priority to GB8705468A priority Critical patent/GB2202236B/en
Publication of GB8705468D0 publication Critical patent/GB8705468D0/en
Publication of GB2202236A publication Critical patent/GB2202236A/en
Application granted granted Critical
Publication of GB2202236B publication Critical patent/GB2202236B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02Pretreatment of the material to be coated
    • C23C16/0209Pretreatment of the material to be coated by heating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305Sulfides, selenides, or tellurides
    • C23C16/306AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
GB8705468A 1987-03-09 1987-03-09 Manufacture of electronic devices comprising cadmium mercury telluride Expired - Lifetime GB2202236B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8705468A GB2202236B (en) 1987-03-09 1987-03-09 Manufacture of electronic devices comprising cadmium mercury telluride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8705468A GB2202236B (en) 1987-03-09 1987-03-09 Manufacture of electronic devices comprising cadmium mercury telluride

Publications (3)

Publication Number Publication Date
GB8705468D0 true GB8705468D0 (en) 1987-04-15
GB2202236A GB2202236A (en) 1988-09-21
GB2202236B GB2202236B (en) 1991-04-24

Family

ID=10613580

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8705468A Expired - Lifetime GB2202236B (en) 1987-03-09 1987-03-09 Manufacture of electronic devices comprising cadmium mercury telluride

Country Status (1)

Country Link
GB (1) GB2202236B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2892170B2 (en) * 1990-07-20 1999-05-17 株式会社東芝 Heat treatment film formation method
FR2736210A1 (en) * 1992-02-26 1997-01-03 Commissariat Energie Atomique Hybrid substrate for II - VI semiconductor device
JPH11288893A (en) * 1998-04-03 1999-10-19 Nec Corp Semiconductor manufacturing apparatus and manufacture of semiconductor device
GB0407804D0 (en) 2004-04-06 2004-05-12 Qinetiq Ltd Manufacture of cadmium mercury telluride
EP1784529B1 (en) 2004-08-02 2011-03-30 Qinetiq Limited Manufacture of cadmium mercury telluride on patterned silicon

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474218A (en) * 1966-01-10 1969-10-21 Air Reduction Electron beam conditioning ingot and slab surfaces
GB1292060A (en) * 1969-04-15 1972-10-11 Tokyo Shibaura Electric Co A method of manufacturing a semiconductor device
BE758321A (en) * 1969-11-03 1971-04-01 Rca Corp PROCESS FOR METALLIZING SEMICONDUCTOR DEVICES
US3626141A (en) * 1970-04-30 1971-12-07 Quantronix Corp Laser scribing apparatus
GB1485063A (en) * 1975-02-04 1977-09-08 Standard Telephones Cables Ltd Etching of silicon devices
US4341569A (en) * 1979-07-24 1982-07-27 Hughes Aircraft Company Semiconductor on insulator laser process
US4292093A (en) * 1979-12-28 1981-09-29 The United States Of America As Represented By The United States Department Of Energy Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces
GB2097312B (en) * 1981-04-28 1985-01-23 Vnii Metiznoi Pro Method for electric arc cleaning and patterning of stock
GB2164796B (en) * 1981-09-17 1986-11-12 Itt Ind Ltd Semiconductor processing
JPS59124136A (en) * 1982-12-28 1984-07-18 Toshiba Corp Process of semiconductor wafer
GB2136937A (en) * 1983-03-18 1984-09-26 Philips Electronic Associated A furnace for rapidly heating semiconductor bodies
GB8319716D0 (en) * 1983-07-21 1983-08-24 Secr Defence Reactive ion etching
GB8324531D0 (en) * 1983-09-13 1983-10-12 Secr Defence Cadmium mercury telluride
US4555612A (en) * 1983-10-17 1985-11-26 General Electric Co. Plasma jet cleaning apparatus and method
US4622082A (en) * 1984-06-25 1986-11-11 Monsanto Company Conditioned semiconductor substrates
JPH0766910B2 (en) * 1984-07-26 1995-07-19 新技術事業団 Semiconductor single crystal growth equipment

Also Published As

Publication number Publication date
GB2202236A (en) 1988-09-21
GB2202236B (en) 1991-04-24

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930309