GB869680A - Improvements relating to semi-conductor devices - Google Patents

Improvements relating to semi-conductor devices

Info

Publication number
GB869680A
GB869680A GB1069459A GB1069459A GB869680A GB 869680 A GB869680 A GB 869680A GB 1069459 A GB1069459 A GB 1069459A GB 1069459 A GB1069459 A GB 1069459A GB 869680 A GB869680 A GB 869680A
Authority
GB
United Kingdom
Prior art keywords
layer
semi
type
conductor devices
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1069459A
Inventor
Peter Arthur Turner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB1069459A priority Critical patent/GB869680A/en
Priority to FR822448A priority patent/FR1256196A/en
Publication of GB869680A publication Critical patent/GB869680A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

869,680. Semi-Conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. March 16, 1960 [March 26, 1959], No. 10694/59. Class 37. In a silicon or-germanium PNPN switching- device comprising rectangular, preferably square, N-type layers 1, 2 and P-type layers 3, 4, the outer N-type layer 1 has a central circular aperture 5 extending through the layer to permit the connection of a trigger electrode 6 to the inner P-type layer 3, at a point equidistant from all points on the adjacent boundary of the junction between layers 1 and 3. An apertured electrode 7 is bonded to layer 1 and a disc-shaped electrode 8 is secured to layer 4.
GB1069459A 1959-03-26 1959-03-26 Improvements relating to semi-conductor devices Expired GB869680A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB1069459A GB869680A (en) 1959-03-26 1959-03-26 Improvements relating to semi-conductor devices
FR822448A FR1256196A (en) 1959-03-26 1960-03-25 Developments relating to triggered semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1069459A GB869680A (en) 1959-03-26 1959-03-26 Improvements relating to semi-conductor devices

Publications (1)

Publication Number Publication Date
GB869680A true GB869680A (en) 1961-06-07

Family

ID=9972572

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1069459A Expired GB869680A (en) 1959-03-26 1959-03-26 Improvements relating to semi-conductor devices

Country Status (1)

Country Link
GB (1) GB869680A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1223954B (en) * 1962-11-16 1966-09-01 Siemens Ag Semiconductor current gate with four zones of alternating conduction types and a control electrode
US3356862A (en) * 1964-12-02 1967-12-05 Int Rectifier Corp High speed controlled rectifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1223954B (en) * 1962-11-16 1966-09-01 Siemens Ag Semiconductor current gate with four zones of alternating conduction types and a control electrode
US3356862A (en) * 1964-12-02 1967-12-05 Int Rectifier Corp High speed controlled rectifier

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