GB8520752D0 - Charge-coupled device(ccd) - Google Patents

Charge-coupled device(ccd)

Info

Publication number
GB8520752D0
GB8520752D0 GB858520752A GB8520752A GB8520752D0 GB 8520752 D0 GB8520752 D0 GB 8520752D0 GB 858520752 A GB858520752 A GB 858520752A GB 8520752 A GB8520752 A GB 8520752A GB 8520752 D0 GB8520752 D0 GB 8520752D0
Authority
GB
United Kingdom
Prior art keywords
ccd
charge
coupled device
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB858520752A
Other versions
GB2164205A (en
GB2164205B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WERK fur FERNSEHELEKTRONIK IM VEB KOMBINAT MIKROELEKTRONIK VEB
Werk fuer Fernsehelektronik GmbH
Original Assignee
WERK fur FERNSEHELEKTRONIK IM VEB KOMBINAT MIKROELEKTRONIK VEB
Werk fuer Fernsehelektronik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WERK fur FERNSEHELEKTRONIK IM VEB KOMBINAT MIKROELEKTRONIK VEB, Werk fuer Fernsehelektronik GmbH filed Critical WERK fur FERNSEHELEKTRONIK IM VEB KOMBINAT MIKROELEKTRONIK VEB
Publication of GB8520752D0 publication Critical patent/GB8520752D0/en
Publication of GB2164205A publication Critical patent/GB2164205A/en
Application granted granted Critical
Publication of GB2164205B publication Critical patent/GB2164205B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
GB8520752A 1984-08-21 1985-08-19 Charge-coupled device (ccd) Expired GB2164205B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD26647784A DD231896A1 (en) 1984-08-21 1984-08-21 LOAD-COUPLED COMPONENT (CCD)

Publications (3)

Publication Number Publication Date
GB8520752D0 true GB8520752D0 (en) 1985-09-25
GB2164205A GB2164205A (en) 1986-03-12
GB2164205B GB2164205B (en) 1989-05-17

Family

ID=5559802

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8520752A Expired GB2164205B (en) 1984-08-21 1985-08-19 Charge-coupled device (ccd)

Country Status (5)

Country Link
JP (1) JPS6187370A (en)
DD (1) DD231896A1 (en)
DE (1) DE3527949A1 (en)
FR (1) FR2569486A1 (en)
GB (1) GB2164205B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2641416A1 (en) * 1988-12-30 1990-07-06 Thomson Composants Militaires METHOD FOR MANUFACTURING CHARGE TRANSFER DEVICE
JPH02266537A (en) * 1989-04-07 1990-10-31 Mitsubishi Electric Corp Charge transfer device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931674A (en) * 1974-02-08 1976-01-13 Fairchild Camera And Instrument Corporation Self aligned CCD element including two levels of electrodes and method of manufacture therefor
GB2009503B (en) * 1977-10-06 1982-02-10 Gen Electric Co Ltd Charge coupled devices
US4229752A (en) * 1978-05-16 1980-10-21 Texas Instruments Incorporated Virtual phase charge transfer device

Also Published As

Publication number Publication date
FR2569486A1 (en) 1986-02-28
JPS6187370A (en) 1986-05-02
GB2164205A (en) 1986-03-12
DD231896A1 (en) 1986-01-08
GB2164205B (en) 1989-05-17
DE3527949A1 (en) 1986-03-27

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee