GB8520751D0 - Charge-coupled device - Google Patents

Charge-coupled device

Info

Publication number
GB8520751D0
GB8520751D0 GB858520751A GB8520751A GB8520751D0 GB 8520751 D0 GB8520751 D0 GB 8520751D0 GB 858520751 A GB858520751 A GB 858520751A GB 8520751 A GB8520751 A GB 8520751A GB 8520751 D0 GB8520751 D0 GB 8520751D0
Authority
GB
United Kingdom
Prior art keywords
charge
coupled device
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB858520751A
Other versions
GB2163600A (en
GB2163600B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WERK fur FERNSEHELEKTRONIK IM VEB KOMBINAT MIKROELEKTRONIK VEB
Werk fuer Fernsehelektronik GmbH
Original Assignee
WERK fur FERNSEHELEKTRONIK IM VEB KOMBINAT MIKROELEKTRONIK VEB
Werk fuer Fernsehelektronik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WERK fur FERNSEHELEKTRONIK IM VEB KOMBINAT MIKROELEKTRONIK VEB, Werk fuer Fernsehelektronik GmbH filed Critical WERK fur FERNSEHELEKTRONIK IM VEB KOMBINAT MIKROELEKTRONIK VEB
Publication of GB8520751D0 publication Critical patent/GB8520751D0/en
Publication of GB2163600A publication Critical patent/GB2163600A/en
Application granted granted Critical
Publication of GB2163600B publication Critical patent/GB2163600B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
GB8520751A 1984-08-21 1985-08-19 Charge-coupled device with volume channel (bccd) Expired GB2163600B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD26647684A DD231895A1 (en) 1984-08-21 1984-08-21 LOAD-COUPLED CONSTRUCTION ELEMENT WITH VOLUME CHANNEL (BCCD)

Publications (3)

Publication Number Publication Date
GB8520751D0 true GB8520751D0 (en) 1985-09-25
GB2163600A GB2163600A (en) 1986-02-26
GB2163600B GB2163600B (en) 1989-05-17

Family

ID=5559801

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8520751A Expired GB2163600B (en) 1984-08-21 1985-08-19 Charge-coupled device with volume channel (bccd)

Country Status (5)

Country Link
JP (1) JPS6194364A (en)
DD (1) DD231895A1 (en)
DE (1) DE3527985A1 (en)
FR (1) FR2569485A1 (en)
GB (1) GB2163600B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100259084B1 (en) * 1997-07-25 2000-06-15 김영환 Solid state image senseor and method for fabricating the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3927468A (en) * 1973-12-28 1975-12-23 Fairchild Camera Instr Co Self aligned CCD element fabrication method therefor
FR2353957A1 (en) * 1976-06-04 1977-12-30 Thomson Csf METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH TWO-PHASE CHARGE TRANSFER, AND DEVICE OBTAINED BY THIS PROCESS
GB2009503B (en) * 1977-10-06 1982-02-10 Gen Electric Co Ltd Charge coupled devices

Also Published As

Publication number Publication date
GB2163600A (en) 1986-02-26
FR2569485A1 (en) 1986-02-28
DE3527985A1 (en) 1986-03-06
JPS6194364A (en) 1986-05-13
GB2163600B (en) 1989-05-17
DD231895A1 (en) 1986-01-08

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee